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IRG7PH46UD-EP
1200V UltraFast Low VCE(ON) trench IGBT in a TO-247AC package
International
TCm, Rectifier
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INSULA TED GA TE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
q Low VCE(ON) trench IGBTtechnology
q Low switching losses
q Square RBSOA
q 100% of the parts tested for ILM co
q Positive VCE (ON) temperature co-efficient G
q Ultra fast soft recovery co-pak diode
q Tightparameterdistribution E
q Lead-Free
Benefits
n-channel
Vcss = 1200V
I NOMINAL = 40A
VCE(on) typ. = 1.7V
q High efficiency in a wide range of applications
q Suitable for a wide range of switching frequencies due to
low VCE (ON) and
q Ruggedtransientperformanceforincreased reliability
q Excellent current sharing in parallel operation
low switching losses
Applications G C E
. U.P.S. TO-247AC TO-247AD
q Welding IRG7PH46UDPbF lRG7PH46UD-EP
0 Solar Inverter
q Induction Heating G C E
Gate Collector Emitter
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
L; © Tc = 25°C Continuous Collector Current (Silicon Limited) 108
(, @ TC = 100°C Continuous Collector Current (Silicon Limited) 57
INOMWAL Nominal Current 40
[CM Pulse Collector Current, I/se = 20V 160 A
ts, Clamped Inductive Load Current, Vas = 20V C) 160
IF @ TC = 25°C Diode Continous Forward Current 108
IF @ To = 100°C Diode Continous Forward Current 57
(m, Diode Maximum Forward Current © 160
VGE Continuous Gate-to-Emitter Voltage t30 V
Fl, © To = 25°C Maximum Power Dissipation 390 W
fl, @ To = 100°C Maximum Power Dissipation 156
T J Operating Junction and -55to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Fu. (IGBT) Thermal Resistance Junction-to-Case-each IGBT) Ci) _ - 0.32
Fu, (Diode) Thermal Resistance Junction-to-Case-e) Diode) © - - 0.66 °C/W
Fics Thermal Resistance, Case-to-Sink (fiat, greased surface) - 0.24 -
ROJA Thermal Resistance, Junction-to-Ambient (typical socket mount) - 40 -
il © 2013 International Rectifier July 17, 2013
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Downlo
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 - - V Vas = 0V, IC = 100pA ©
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 1.2 - V/°C VGE = 0V, IC = 1.0mA (25°C-150°C)
VCEW) Collector-to-Emitter Saturation Voltage - 1.7 2.0 Ic = 40A, VGE = 15V, T J = 25°C
- 2.0 - V Ic = 40A, VGE =15V,TJ = 150°C
Valium Gate Threshold Voltage 3.0 - 6.0 v VCE = Vas, IC = 1.6mA
AVGE(1h)/ATJ Threshold Voltage temp. coefficient - -13 - mV/°C VCE = Vas, Ic = 1.6mA (25°C - 150°C)
gfe Forward Transconductance - 50 - S VCE = 50V, IO = 40A, PW = 20ps
Ices Collector-to-Emitter Leakage Current - 1.5 100 pA l/ss = 0V, VCE = 1200V
- 2.0 - mA VGE = 0V, VCE = 1200V, To = 150°C
VFM Diode Forward Voltage Drop - 3.1 4.8 V V = 40A
- 3.0 - IF = 40A, TJ = 150°C
lass Gate-to-Emitter Leakage Current - - i200 nA Vas = t30V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
q, Total Gate Charge (turn-on) - 220 320 Ic = 40A ©
Qge Gate-to-Emitter Charge (turn-on) - 30 50 nC Vas = 15V
Qgc Gate-to-Collector Charge (turn-on) - 85 130 Vcc = 600V
Eo,, Turn-On Switching Loss - 2610 3515 IC = 40A, Vcc = 600V, VGE = 15V ©
Es, Turn-Off Switching Loss - 1845 2725 pd Rs = 1052, L = 2OOpH,TJ = 25°C
Emil Total Switching Loss - 4455 6240 Energy losses include tail & diode reverse recovery
tum) Turn-On delay time - 45 60
t, Rise time - 40 60 ns
tdiott) Turn-Off delay time - 410 450
t, Fall time - 45 60
Eon Turn-On Switching Loss - 3790 - Ic = 40A, Vcc = 600V, VGE=15V s
Eoft Turn-Off Switching Loss - 2905 - pd Rs=10Q, L=200pH, T, = 150°C
Emal Total Switching Loss - 6695 - Energy losses include tail & diode reverse recovery
tam) Turn-On delay time - 40 -
t, Rise time - 40 - ns
tam“) Turn-Off delay time - 480 -
t, Fall time - 200 -
cu, Input Capacitance - 4820 - PF l/ss = 0V
Coes Output Capacitance - 150 - Vcc = 30V
Cres Reverse Transfer Capacitance - 110 - f = 1 .OMhz
Tu =150°C, IC = 160A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE Vcc = 960V, Vp S1200V
Rg =1OQ,VGE = +20V to 0V
Erec Reverse Recovery Energy of the Diode - 1130 - pJ TJ = 150°C
trr Diode Reverse Recovery Time - 140 - ns Vcc = 600V, IF = 40A
l,, Peak Reverse Recovery Current - 40 - A Rg = Ion, L =1.0mH
Notes:
C) Vcc = 80% (VCEs), VGE = 20V, L = 200pH, Rs =1OQ.
© Pulse width limited by max. junction temperature.
© Refer to AN-1086 for guidelines for measuring V
Ci) R0 is measured at " of approximately 90t.
s Values influenced by parasitic L and C of the test circuit.
(BR)CES safely.
© 2013 International Rectifier July 17, 2013
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