IRG6I320U ,330V Plasma Display Panel Trench IGBT in a TO-220AB Full-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsV ±30Gate-to-Emitter Voltage VGEI @ T = 25 ..
IRG6I330U ,330V Plasma Display Panel Trench IGBT in a TO-220AB Full-Pak packageapplications I max @ T = 25°C250 ARP CTM Low V and Energy per Pulse (E )CE(on) PULSE T max150 °CJf ..
IRG6I330UPBF ,330V Plasma Display Panel Trench IGBT in a TO-220AB Full-Pak packageapplications.Absolute Maximum RatingsMax.Parameter UnitsVGate-to-Emitter Voltage ±30 VGEI @ T = 25° ..
IRG6S320U ,330V Plasma Display Panel Trench IGBT in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsV Gate-to-Emitter Voltage ±30 VGEI @ T = 2 ..
IRG6S320UPBF ,330V Plasma Display Panel Trench IGBT in a D2-Pak packageapplicationsI max @ T = 25°C 160 ARP CTM Low V and Energy per Pulse (E )CE(on) PULSET max150 °CJfo ..
IRG6S330U ,330V Plasma Display Panel Trench IGBT in a D2-Pak packageapplications.Absolute Maximum RatingsMax.Parameter UnitsV ±30Gate-to-Emitter Voltage VGEI @ T = 25° ..
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IRG6I320U
330V Plasma Display Panel Trench IGBT in a TO-220AB Full-Pak package
International
ISBR Rectif
Features
. Advanced Trench IGBT Technology
q Optimized for Sustain and Energy Recovery
circuits in PDP applications
. Low VCEM) and Energy per Pulse (EPULSETM)
for improved panel efficiency
. High repetitive peak current capability
. Lead Free package
Description
PDP TRENCH IGBT
PD - 97351A
lRG6l320UPbF
Key Parameters
VCE min 330 V
VCE(ON) typ. @ IC = 24A 1.45 V
IRP max @ Tc-- 25°C 160 A
T J max 150 =
\i; 2:. E
E TO-220AB
n-channel Full-Pak
Gate Collector Emitter
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBTtechnologyto achieve low VCEW) and low EpULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter Max. Units
Vas Gate-to-Emitter Voltage t30 V
lc @ To = 25°C Continuous Collector Current, VGE @ 15V 24 A
lo @ TC = 100°C Continuous Collector, Vas @ 15V 12
lm, © To = 25°C Repetitive Peak Current (D 160
PD @TC = 25°C Power Dissipation 39 W
PD @TC = 100°C Power Dissipation 16
Linear Derating Factor 0.31 WPC
Tu Operating Junction and -40 to + 150 °C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10ltrin (1 .1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case OD - 3.2 °C/W
1
03/25/09
IRG6l320UPbF
International
TO.R Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVCES Collector-to-emitter Breakdown Voltage 330 - - V Vas = 0V, ICE = 500pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage© 30 - - V Vas = 0V, ICE = 1 A
ABVCEs/ATJ Breakdown Voltage Temp. Coefficient - 0.30 - V/°C Reference to 25°C, log = 1mA
- 1.20 - I/ss =15V,|CE = 12A (3
- 1.45 1.65 I/ss = 15V, ICE = 24A ©
Vegan) Static Collector-to-Emir Voltage 1.95 - V VGE = 15V, ICE = 48A ©
- 2.20 - Vas = 15V, ICE = 60A (3
- 2.26 - Vee = 15V, ICE = 48A, To = 150°C (3
VGE(th) Gate Threshold Voltage 2.6 - 5.0 V Vce = I/ss, ICE = 250pA
AVGEWVATJ Gate Threshold Voltage Coefficient - -10 - mV/°C
ICES Collector-to-Emitter Leakage Current - 1.0 10 VCE = 330V, Vas = 0V
- 5.0 - VCE = 330V, Vas = 0V, T,, = 100°C
20 100 PA VCE = 330v, l/ss = OV, TJ = 125°C
- 75 - I/cs = 330V, I/ss = 0V, TJ =150°C
legs Gate-to-Emir Forward Leakage - - 100 nA Vee = 30V
Gate-to-Emitter Reverse Leakage - - -100 I/ss = -301/
(he Forward Transconductance - 28 - S VCE = 25V, ICE = 12A
q, Total Gate Charge - 46 - nC VCE = 200V, IC = 12A, VGE = 15V0)
Qgc Gate-to-Collector Charge - 7.7 -
tam) Turn-On delay time - 24 - IC = 12A, Vcc = 196V
t, Rise time - 20 - ns RG = Ion, L=210pH, Ls-- 150nH
tom Turn-Off delay time - 89 - T J = 25°C
t, Fall time - 70 -
ton) Turn-On delay time - 23 - k; = 12A, Vcc = 196V
t, Rise time - 52 - ns Rs = Ion, L=200uH, Ls-- 150nH
tion Turn-Off delay time - 130 - T, = 150°C
t, Fall time - 140 -
ts, Shoot Through Blocking Time 100 - - ns Vcc = 240V, Var = 15V, Ra-- 5.19
L = 220nH, C-- 0.10pF, Vas = 15V
EPULSE Energy per Pulse _ 240 - pd Vcc = 240v, Rs-- 5.10, TJ = 25°C
L = 220nH, C-- 0.10pF, Vas =15V
_ 280 - Vcc = 240v, Rs-- 5.10, Tu = 100°C
Class 2
ESD Human Body Model (Per JEDEC standard JESD22-A114)
Machine Model Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies Input Capacitance - 1160 - Vee = 0V
Coes Output Capacitance - 61 - pF VCE = 30V
Cres Reverse Transfer Capacitance - 38 - f = 1.0MHz, See Fig.13
LC Internal Collector Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance - 7.5 - from package
and center of die contact
Notes:
C) Half sine wave with duty cycle <= 0.05, ton=2psec.
© R9 is measured at T: of approximately 90°C.
© Pulse width C 400ps; duty cycle f 2%.
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