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IRG4RC10UD-IRG4RC10UDTR
600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package
International PD91571A
TOR Rectifier IRG4 RC1 OUD
INSULATED GATE BIPOLAR TRANSISTOR WITH UItraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features . . . c
. UltraFast: Optimized for medium operating VCES = 600V
frequencies ( 8-40 kHz in hard switching, >200
kHz in resonant mode). _
. Generation 4 IGBT design provides tighter VCE(on) typ. - 2.15V
parameter distribution and higher efMiency than G
previous generation
. IGBT co-packaged with HEXFREDTM ultrafast, E
ylt.r.a-soit-rtcovey anti-parallel diodes for use in n -C h a n n el tf(typ.) = 140ns
bridge configurations
. Industry standard TO-252AA package
Benefits
. Generation 4 IGBT's offer highest efficiencies
available
. IGBT's optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
@VGE = 15V, lc = 5.0A
less/no snubbing D-PAK
. Lower losses than MOSFET's conduction and Diode TO-252AA
losses
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emi) Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 8.5
Ic @ Tc = 100°C Continuous Collector Current 5.0
ICM Pulsed Collector Current co 34 A
u, Clamped Inductive Load Current © 34
IF @ Tc = 100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 16
VGE Gate-to-Emitter Voltage 1: 20 V
Pro @ To = 25°C Maximum Power Dissipation 38
Pro @ Tc = 100°C Maximum Power Dissipation 15
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT - - 3.3
RGJC Junction-to-Case - Diode - - 7.0 ''ClW
ReuA Junction-to-Ambient (PCB mount)* - - 50
Wt Weight - 0.3 (0.01) - g (oz)
Details of note C) through © are on the last page
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International
IRG4RC10UD IEZR 'kyctifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi Breakdown Voltages 600 - - V VGE = 0V, Ic = 250PA
AV(BR)cEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.54 - V/°C VGE = 0V, Ic = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 2.15 2.6 Ic = 5.0A VGE = 15V
- 2.61 - V lc = 8.5A See Fig. 2, 5
- 2.30 - Ic = 5.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -8.7 - mV/°C VCE = VCE, lc = 250pA
gig Forward Transconductance © 2.8 4.2 - S VCE = 100V, k: = 5.0A
Ices Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop - 1.5 1.8 V Ic = 4.0A See Fig. 13
- 1.4 1.7 lc = 4.0A, TJ = 125°C
ds Gate-to-Emitter Leakage Current - - i100 nA VGE = t20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 15 22 lc = 5.0A
Qge Gate - Emitter Charge (turn-on) - 2.6 4.0 nC Vcc = 400V See Fig. 8
Qge Gate - Collector Charge (turn-on) - 5.8 8.7 VGE = 15V
td(on) Turn-On Delay Time - 40 - TJ = 25°C
tr Rise Time - 16 - ns k: = 5.0A, Vcc = 480V
td(off) Turn-Off Delay Time - 87 130 VGE = 15V, Rs = 1009
t, FaIITime - 140 210 Energy losses include "tail" and
Er,, Turn-On Switching Loss - 0.14 - diode reverse recovery.
Eon Turn-Off Switching Loss - 0.12 - mJ See Fig. 9, 10, 18
a, Total Switching Loss - 0.26 0.33
tuion) Turn-On Delay Time - 38 - TJ = 150°C, See Fig. 11, 18
t, Rise Time - 18 - ns Ic = 5.0A, Vcc = 480V
tam) Turn-Off Delay Time - 95 - VGE = 15V, Rs = 1009
tf FaIITime - 250 - Energy losses include "tail" and
EU Total Switching Loss - 0.45 - m1 diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 270 - VGE = 0V
Coes Output Capacitance - 21 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 3.5 - f = 1.0MHz
trr Diode Reverse Recovery Time - 28 42 ns TJ = 25°C See Fig.
- 38 57 TJ =125°C 14 IF = 4.0A
In Diode Peak Reverse Recovery Current - 2.9 5.2 A TJ = 25°C See Fig.
- 3.7 6.7 TJ =125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 40 60 nC TJ = 25°C See Fig.
- 70 105 T: = 125°C 16 di/dt = 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 280 - Alps T: = 25°C See Fig.
During tr, - 235 - TJ = 125°C 17
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