IRG4RC10SD ,600V DC-1 kHz (Standard) Copack IGBT in a D-Pak packageFeatures Extremely low voltage drop 1.1V(typ) @ 2A S-Series: Minimizes power dissipa ..
IRG4RC10SDTR ,600V DC-1 kHz (Standard) Copack IGBT in a D-Pak packagePD-91678BIRG4RC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT R ..
IRG4RC10SDTRL ,600V DC-1 kHz (Standard) Copack IGBT in a D-Pak packageFeatures Extremely low voltage drop 1.1V(typ) @ 2A S-Series: Minimizes power dissipa ..
IRG4RC10STR ,600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak packageInternational
TOR RectifieruanDTahTelJemD c
E
n-channel
Vcss = 600V
Vcson) typ. = 1.10V
..
IRG4RC10U ,600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak packageFeatures C• UltraFast: Optimized for high operatingV = 600VCES frequencies ( 8-40 kHz in hard sw ..
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ISP1107W ,Advanced Universal Serial Bus transceivers
IRG4RC10SD-IRG4RC10SDTR-IRG4RC10SDTRL
600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package
International
ISER Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
. Extremely low voltage drop 1.1V(typ) @ 2A
. S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
. Tight parameter distribution
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
. Industry standard TO-252AA package
Benefits
. Generation 4 IGBT's offer highest efficiencies
available
. IGBT's optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
. Lower losses than MOSFET'S conduction and
Diode losses
Absolute Maximum Ratings
PD-91678B
IRG4RC1OSD
Standard Speed CoPack
VCES = 600V
@VGE =15V, Ic = 2.0A
TO-252AA
Parameter
VCES Collector-to-Emitter Voltage
Ic @ Tc = 25°C Continuous Collector Current
k; @ Tc = 100°C Continuous Collector Current
ICM Pulsed Collector Current (D
ILM Clamped Inductive Load Current ©
IF @ To = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ Tc = 25°C Maximum Power Dissipation
PD @ To = 100°C Maximum Power Dissipation
To Operating Junction and
Storage Temperature Range
-55 to +150
Thermal Resistance
Parameter
Fuuc Junction-to-Case - IGBT
RM; Junction-to-Case - Diode
7.0 "C/W
ReJA Junction-to-Ambient (PCB mount)'
Wt Weight
0.3 (0.01)
g (oz)
* When mounted on I" square PCB (FR-4 or G-1O Material).
For recommended footprint and soldering techniques refer to application note #AN-994
06/14/07
International
IRG4RC10SD IEZR 'kyctifier
Electrical Characteristics © TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage@ 600 - - V VGE = 0V, Ic = 250pA
AV(BR)c53/ATJ Temperature Coeff. of Breakdown Voltage - 0.64 - V/°C Vss = 0V, k; = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.58 1.8 k; = 8.0A l/ss = 15V
- 2.05 - V k: = 14.0A See Fig. 2, 5
- 1.68 - IC = 8.0A, Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250pA
AVssith/ATo Temperature Coeff. of Threshold Voltage - -9.5 - mV/°C VCE = VGE, IC = 250pA
9te Forward Transconductance© 3.65 5.48 - S VCE = 100V, k; =8.0A
ICES Zero Gate Voltage Collector Current - - 250 PA VGE = 0V, VCE = 600V
- - 1000 Vee = 0V, VCE = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop - 1.5 1.8 V lo =4.0A See Fig. 13
- 1.4 1.7 IC =4.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current - - $100 nA VGE = :20V
Switching Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min Typ. Max. Units Conditions
Qu Total Gate Charge (turn-on) - 15 22 lc = 8.0A
Qge Gate - Emitter Charge (turn-on) - 2.42 3.6 nC Vcc = 400V See Fig. 8
099 Gate - Collector Charge (turn-on) - 6.53 9.8 Vas = 15V
td(on) Turn-On Delay Time - 76 - Tu = 25°C
t, Rise Time - 32 - ns Ic = 8.0A, Vcc = 480V
tdem) Turn-Off Delay Time - 815 1200 VGE = 15V, R9 = 1009
tf Fall Time - 720 1080 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.31 - diode reverse recovery.
Est Turn-Off Switching Loss - 3.28 - mJ See Fig. 9, 10, 18
ES Total Switching Loss - 3.60 10.9
Ets Total Switching Loss - 1.46 2.6 mJ Ic = 5.0A
td(on) Turn-On Delay Time - 7O - Tu = 150°C, See Fig. 10,11, 18
t, Rise Time - 36 - ns Ic = 8.0A, Vcc = 480V
tum) Turn-Off Delay Time - 890 - VGE = 15V, Re = 1009
if Fall Time - 890 - Energy losses include "tail" and
Ets Total Switching Loss - 3.83 - mJ diode reverse recovery.
Ls Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 280 - Vee = 0V
Coes Output Capacitance - 30 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 4.0 - f = 1.0MHz
tr, Diode Reverse Recovery Time - 28 42 ns TJ = 25°C See Fig.
- 38 57 TJ = 125°C 14 IF =4.0A
Ir, Diode Peak Reverse Recovery Current - 2.9 5.2 A Tu = 25°C See Fig.
- 3.7 6.7 Tu = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 4O 60 nC Tu = 25°C See Fig.
- 70 105 TJ = 125°C 16 di/dt = 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 280 - Alps TJ = 25°C See Fig.
During tb - 235 - Tu = 125°C 17
Details of note co through © are on the last page
