IRG4RC10S ,600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak packageInternational
TOR RectifieruanDTahTelJemD c
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n-channel
Vcss = 600V
Vcson) typ. = 1.10V
..
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TOR RectifieruanDTahTelJemD c
E
n-channel
Vcss = 600V
Vcson) typ. = 1.10V
..
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IRG4RC10S-IRG4RC10STR
600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Featu res
. Extremely low voltage drop; 1.0V typical at 2A, 100°C
. Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
. Industry standard TO-252AA package
Benefits
. Generation 4 IGBT's offer highest efficiency available
. lGBT's optimized for specified application conditions
PD-91732B
IRG4RC10S
Standard Speed IGBT
n-channel
VCES = 600V
@VGE = 15V, lc = 2.0A
TO-252AA
Absolute Maximum Ratings
Parameter Max. Units
Vcss Collector-to-Emir Breakdown Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 14
lo @ Tc = 100°C Continuous Collector Current 8.0 A
ICM Pulsed Collector Current (O 18
ILM Clamped Inductive Load Current (2) 18
VGE Gate-to-Emitter Voltage t 20 V
EAnv Reverse Voltage Avalanche Energy © 110 m]
Po @ Tc = 25°C Maximum Power Dissipation 38 W
PD @ Tc = 100°C Maximum Power Dissipation 15
T J Operating Junction and ~55 to + 150
Tsre Storage Temperature Range =0
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter Typ. Max. Units
Rar: Junction-to-Case - 3.3 a C /W
Ras Junction-to-Ambient (PCB mount)' - 50
Wt Weight 0.3 (0.01) - g (oz)
. When mounted on l" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
1
07/04/07
Downloaded from: http://www.datasheetcataloq.com/
IRG4RC10S International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Vies)css Cdlecttx-to-Emitter Breakdown Voltage 600 - - V l/ss = ov, IC = 250pA
VisR)Ecs Emitter-tty-Cd/r Breakdown Voltage co 18 - - V Veg = ov, IC = 1.0A
AV(ER)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.64 - W'C l/SE = 0V, u = 1.0mA
- 1.58 1.8 Ic =8.0A VGE=15V
VCE(ON) Cdlector-to-Emilter Saturation Voltage - 2.05 - V Ic = 14A See Fig.2, 5
- 1.68 - Ic = 8.0A , To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 I/cs = Ws, IQ = 250PA
AVGEW/ATJ Temperature Coeff. of Threshold Voltage - -9.5 - mV/°C VCE = Var lc = 250PA
gfe Forward Transconductance G) 3.7 5.5 - S VCE = 100V, Ic = 8.0A
ICES Zero Gate Voltage Collector Current - - 250 pA l/ss = ov, VCE = 600V
- - 2.0 l/ss = OV, VCE = 10V, Tu = 25''C
- - 1000 Veg = 0V, VCE = 600V, Tu = 150°C
legs Gate-to-Emote, Leakage Current - - 1100 nA l/ss = t201/
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 15 22 lg = 8.0A
Qge Gate - Emitter Charge (turn-on) - 2.4 3.6 nC Vcc = 400V See Fig. 8
Qgo Gate - Collector Charge (turn-on) - 6.5 9.8 N/ss = 15V
tam) Turn-On Delay Time - 25 -
tr Rise Time - 28 - ns Tu = 25°C
td(off) Turn-Off Delay Time - 630 950 lc = 8.OA, Vcc = 480V
tr Fall Time - 710 1100 N/ss =15V, Rs =1OOQ
Eon Turn-On Switching Loss - 0.14 - Energy losses include "tail"
Eon Turn-Off Switching Loss - 2.58 - mJ See Fig. 9, 10, 14
ES Total Switching Loss - 2.72 4.3
tam) Turn-On Delay Time - 24 - Tu = 150''C,
tr Rise Time - 31 - ns lc = 8.OA, Vcc = 480V
tam) Turn-Off Delay Time - 810 - Vos =15V, Rs = 100ft
t, Fall Time - 1300 - Energy losses include "tail"
Ets Total Switching Loss - 3.94 - m,] See Fig. ll, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Ces Input Capacitance - 280 - Vos = 0V
Coes Output Capacitance - 30 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 4.0 - f = 1.0MHz
Notes:
C) Repetitive rating: Vas = 20V, pulse width limited by 0) Pulse width I 80ps: duty factor I 0.1%,
max. junction temperature. ( See fig. 13b)
(See fig. 13a)
Repetitive rating: pulse width limited by maximum
junction temperature.
Vcc = 80%(VcEs), l/SE = 20V, L =10pH, Rs =100f2,
© Pulse width 5.0ps, single shot.
