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IRG4RC10K
600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak package
PD 91735A
IRG4RC'10K
ShortCircuitRated
UltraFast IGBT
International
122R Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features c
. Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit VCES = 600V
Rated to 10ps @ 125°C, VGE = 15V
. Generation 4 IGBT design provides higher etrciency V = 2 39V
than Generation 3 G CE(on) typ. .
. Industry standard TO-252AA package
E @VGE = 15V, lc = 5.0A
n -c ha n n eI
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for speciMd application conditions
TO-252AA
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Io @ Tc = 25''C Continuous Collector Current 9.0
Ic @ Tc = 100°C Continuous Collector Current 5.0 A
ICM Pulsed Collector Current C) 18
ILM Clamped Inductive Load Current © 18
tsc Short Circuit \Mthstand Time 10 us
VGE Gate-to-Emitter Voltage i 20 V
EARV Reverse Voltage Avalanche Energy © 34 m]
PD © Tc = 25°C Maximum Power Dissipation 38 W
Po @ Tc = 100°C Maximum Power Dissipation 15
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.3 ''CIW
ROJA Junction-to-Ambient (PCB mount)* - 50
Wt Weight 0.3 (0.01) - g (oz)
* When mounted on I" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
1
12/30/00
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International
IRG4RC10K IEZR 'kyctifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, Ic = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.58 - V/°C VGE = 0V, lc = 1.0mA
- 2.39 2.62 lc = 5.0A VGE = 15V
Vcaom Collector-to-Emi) Saturation Voltage - 3.25 - V Ic = 9.0A See Fig.2, 5
- 2.63 - k: = 5.0A , TJ = 150°C
VGEM Gate Threshold Voltage 3.0 - 6.5 VCE = VGE, Ic = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = Vss, Ic = 250pA
git, Forward Transconductance co 1.2 1.8 - S VCE = 50 V, lc = 5.0A
ICES Zero Gate Voltage Collector Current - 250 PA VGE = ov, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, Tu = 25°C
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
IGES Gate-to-Ether Leakage Current - - i100 nA VGE = SBN
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 19 29 Ic = 5.0A
Qge Gate - Emitter Charge (turn-on) - 2.9 4.3 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 9.8 15 VGE = 15V
tum”) Turn-On Delay Time - 11 -
tr Rise Time - 24 - ns TJ = 25°C
tum) Turn-Off Delay Time - 51 77 Ic = 5.0A, Vcc = 480V
tf Fall Time - 190 290 VGE = 15V, Rs = 1009
E0n Turn-On Switching Loss - 0.16 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.10 - mJ See Fig. 9,10,14
Ets Total Switching Loss - 0.26 0.32
tsc Short Circuit Withstand Time 10 - - us Vcc = 400V, To = 125°C
I/ss = 15V, Rs = 100n , VCPK < 500V
td(on) Turn-On Delay Time - 11 - T: = 150°C,
tr Rise Time - 27 - lc = 5.0A, Vcc = 480V
tdom Turn-Off Delay Time - 67 - ns VGE = 15V, Rs = 1009
If Fall Time - 350 - Energy losses include "tail"
Ets Total Switching Loss - 0.47 - mJ See Fig. 10,11,14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 220 - VGE = 0V
Coes Output Capacitance - 29 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.5 - f = 1.0MHz
Notes:
(D Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See ng. 13b )
© Vcc = 80%(VcEs), VGE = 20V, L = 10pH, Rs = 100O,
(See Rr 13a)
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co Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width s 80ps; duty factor s 0.1%.
s Pulse width 5.0ps, single shot.
