IRG4PSH71UD ,1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA packageFeaturesC• UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard swit ..
IRG4RC10K ,600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak packageFeaturesC• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and ..
IRG4RC10KD ,600V UltraFast 8-25 kHz Copack IGBT in a D-Pak packageFeatures Short Circuit Rated UltraFast: Optimized forV = 600VCES high operating frequencies >5.0 ..
IRG4RC10S ,600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak packageInternational
TOR RectifieruanDTahTelJemD c
E
n-channel
Vcss = 600V
Vcson) typ. = 1.10V
..
IRG4RC10SD ,600V DC-1 kHz (Standard) Copack IGBT in a D-Pak packageFeatures Extremely low voltage drop 1.1V(typ) @ 2A S-Series: Minimizes power dissipa ..
IRG4RC10SDTR ,600V DC-1 kHz (Standard) Copack IGBT in a D-Pak packagePD-91678BIRG4RC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT R ..
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1107W ,Advanced Universal Serial Bus transceivers
ISP1107W ,Advanced Universal Serial Bus transceivers
IRG4PSH71UD
1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package
International
IsaR Rectifier
PD - 91686
IRG4PSH71UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UItraFast Copack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
. UItraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
. Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
. Creepage distance increased to 5.35mm
Benefits
. Generation 4 IGBT's offer highest efficiencies
available
. Maximum power density, twice the power
handling of the TO-247, less space than TO-264
. IGBTs optimized for specific application conditions
I Cost and space saving in designs that require
VCES = 1200V
E @VGE =15V, Ic = 50A
n-channel
multiple, paralleled IGBTs SUPER - 247
. HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
Parameter Max. Units
chs Collector-to-Emitter Voltage 1200 V
IC © Tc = 25°C Continuous Collector Current 99 A
'0 @ To = 100°C Continuous Collector Current 50
G, Pulse Collector Current C) 200
ILM Clamped Inductive Load current © 200
Vas Gate-to-Emitter Voltage t20 V
V @ To = 100°C Diode Continuous Forward Current 70
Iss, Diode Maximum Forward Current 200
PD @ TC = 25°C Maximum Power Dissipation 350 W
PD @ Tc = 100°C Maximum Power Dissipation 140
T, Operating Junction and -55 to +150
Tsre Storage Temperature Range ''C
Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
RoJc Junction-to-Case- IGBT - - 0.36 °CNV
ROJC Junction-to-Case- Diode - - 0.36
Recs Case-to-Sink, flat, greased surface - 0.24 -
RNA Junction-to-Ambient, typical socket mount - - 38
Recommended Clip Force 20 (2.0) N (kgf)
Wt Weight - 6 (0.21) - g (oz.)
1
5/24/04
IRG4PSH71UD
International
IEER Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emilie, Breakdown Voltage 6) 1200 - - V VGE = 0V, IC = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 19 - - V l/ss = 0V, Ic = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.78 - V/°C l/ss = 0V, Ic = 1mA
- 2.52 2.70 v IC = 70A l/se = 15V
VCE(on) Collector-to-Emitter Saturation Voltage - 3.17 - IC = 140A See Fig.2, 5
- 2.68 - IC = 70A, T: =150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, lc = 250PA
AN/som/ATO Threshold Voltage temp. coefficient - -9.2 - mV/°C VcE = VGE, Ic = 1.0mA
gfe Forward Transconductance C9 48 72 - S Vcs = 100V, lc = 70A
ICES Zero Gate Voltage Collector Current - - 500 PA Vss = 0V, VCE = 1200V
- - 2.0 l/ss = 0V, VCE = 10V
- - 5000 l/ss = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop - 2.92 3.9 V V = 70A See Fig.13
- 2.88 3.7 V = 70A, T, = 150°C
lass Gate-to-Emitter Leakage Current - - 1100 nA VGE = t20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
q, Total Gate Charge (turn-on) - 380 570 lc = 70A
Qge Gate-to-Emitter Charge (turn-on) - 61 24 n0 Vcc = 400V See Fig.8
Qgc Gate-to-Collector Charge (turn-on) - 130 200 VGE = 15V
two", Turn-On delay time - 46 - IC = 70A, Vcc = 960V
t, Rise time - 77 - ns VGE = 15V, Rs = 5.09
tdom Turn-Off delay time - 250 350 Energy losses include "tail"
t, Fall time - 220 330 See Fig. 9, 10, 11, 14
Eon Turn-On Switching Loss - 8.8 -
Es, Turn-Off Switching Loss - 9.4 - mJ
Etat Total Switching Loss - 18.2 19.7
td(on) Turn-On delay time - 43 - To = 150°C, See Fig. 9, IO, 11, 14
t, Rise time - 78 - ns lc = 70A, Vcc = 960V
tdiom Turn-Off delay time - 330 - VGE = 15V, Re = 5.09
t, Fall time - 480 - Energy losses include "tail"
ETS Total Switching Loss - 26 - mJ
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 6640 - Vas = 0V
cu, Output Capacitance - 420 - pF Vcc = 30V, See Fig.7
Cres Reverse Transfer Capacitance - 60 - f = 1.0MH2
trr Diode Reverse Recovery Time - 110 170 ns Tu--25t See Fig
- 180 270 TJ=125°C 14 IF = 70A
Ir, Diode Peak Reverse Recovery Current - 6.0 9.0 A TJ=25°C See Fig
- 8.9 13 Tu=125% 15 vs, = 200V
0,, Diode Reverse Recovery Charge - 350 530 nC T.e25°C See Fig
- 870 1300 Tu=125''C 16 di/dt = 200A/ps
di(,ec,M/dt Diode Peak Rate of Fall of Recovery - 150 230 Alps TJ=25°C See Fig
During h, - 130 200 TJ=125°C 17
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