IRG4PSH71U ,1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA packageFeatures C• UltraFast switching speed optimized for operatingV = 1200VCES frequencies 8 to 40kHz ..
IRG4PSH71UD ,1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA packageFeaturesC• UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard swit ..
IRG4RC10K ,600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak packageFeaturesC• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and ..
IRG4RC10KD ,600V UltraFast 8-25 kHz Copack IGBT in a D-Pak packageFeatures Short Circuit Rated UltraFast: Optimized forV = 600VCES high operating frequencies >5.0 ..
IRG4RC10S ,600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak packageInternational
TOR RectifieruanDTahTelJemD c
E
n-channel
Vcss = 600V
Vcson) typ. = 1.10V
..
IRG4RC10SD ,600V DC-1 kHz (Standard) Copack IGBT in a D-Pak packageFeatures Extremely low voltage drop 1.1V(typ) @ 2A S-Series: Minimizes power dissipa ..
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1107W ,Advanced Universal Serial Bus transceivers
ISP1107W ,Advanced Universal Serial Bus transceivers
IRG4PSH71U
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
International
ISZR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. UItraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
. Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
. Creepage distance increased to 5.35mm
Benefits
. Generation 4 IGBT's offer highest efficiencies
available
. Maximum power density, twice the power
handling of the TO-247, less space than TO-264
. IGBTs optimized for specific application conditions
. Cost and space saving in designs that require
PD - 91685
IIRG4PSH71 U
UItraFast Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.50V
E @VGE=15V, lc=50A
n-channel
multiple, paralleled IGBTs SUPER - 247
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
lc @ Tc = 25°C Continuous Collector Current 99 A
lc © Tc = 100°C Continuous Collector Current 50
ICM Pulse Collector Current OD 200
lo, Clamped Inductive Load current © 200
VGE Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 150 mJ
Pro @ TC = 25°C Maximum Power Dissipation 350 W
Po @ Tc = 100°C Maximum Power Dissipation 140
T J Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter Min Typ. Max. Units
Roc Junction-to-Case- IGBT - - 0.36 °C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
ROJA Junction-to-Ambient, typical socket mount - - 38
Recommended Clip Force 20 0) N (kgf)
Wt Weight -- 6 (0.21) - g (oz.)
1
5/24/04
lRG4PSH71 U
International
IEER Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage © 1200 - - V Vss = OV, lc = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 19 - - V Vss = 0V, Ic = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.78 - V/°C Vss = 0V, Ic = 1mA
- 2.52 2.70 v Ic = 70A Vas = 15V
VCE(on) Collector-to-Emitter Saturation Voltage - 3.17 - Ic = 140A See Fig.2, 5
- 2.68 -- IC = 70A, T: = 150°C
Vegan) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250PA
AVGE(th)/ATJ Threshold Voltage temp. coefficient - -9.2 - mV/°C VCE = VGE, Io = 1.0mA
gfe Forward Transconductance co 48 72 - S VCE = 100V, IC = 70A
ICES Zero Gate Voltage Collector Current - - 500 pA Vas = 0V, VCE = 12OOV
- - 2.0 I/es = 0V, VCE =10V
- - 5000 I/ss = 0V, VCE = 1200V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current - - 1100 nA l/ss = t20)/
Switching Characteristics © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
a, Total Gate Charge (turn-on) - 370 560 IC = 70A
Qge Gate-to-Emitter Charge (turn-on) - 61 24 nC Vcc = 400V See Fig.8
ag,, Gate-to-Collector Charge (turn-on) - 120 50 l/ss = 15V
tam) Turn-On delay time - 51 - lc = 70A, Vcc = 960V
t, Rise time - 70 - ns VGE = 15V, Rs = 5.09.
taon Turn-Off delay time - 280 390 Energy losses include "tail"
t, Fall time - 170 260 See Fig. 9, 10, 11, 14
EL,n Turn-On Switching Loss - 4.77 -
Eoff Turn-Off Switching Loss - 9.54 - mJ
Etot Total Switching Loss - 14.3 15.8
two", Turn-On delay time - 49 - T, = 150°C, See Fig. 9, 10, 11, 14
t, Rise time - 70 - ns Ic = 70A, Vcc = 960V
tdist) Turn-Off delay time - 390 - Vas = 15V, Rs = 5.09
t, Fall time - 360 - Energy losses include "tail"
Ers Total Switching Loss - 25 - mJ
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 7280 - VGE = 0V
COes Output Capacitance - 290 - pF Vcc = 30V, See Fig.7
Cres Reverse Transfer Capacitance - 50 - f = 1.0MHz
Notes:
OD Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
© Vcc=80%(VcEs), VGE=20V, L=10pH, Re: 5.0 Q (figure 13a)
© Pulse width S 80ps; duty factor S 0.1%.
6) Pulse width 5.0ps, single shot.
co Repetitive rating; pulse width limited by maximumjunction temperature.
