IRG4PSH71KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA packageFeaturesV = 1200V• Hole-less clip/pressure mount package compatibleCES with TO-247 and TO-264, ..
IRG4PSH71KDPBF ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA packageFeatures
. Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinfo ..
IRG4PSH71U ,1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA packageFeatures C• UltraFast switching speed optimized for operatingV = 1200VCES frequencies 8 to 40kHz ..
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IRG4PSH71KD
1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA package
International
:raRpectifier
PRELIMINARY
PD - 91688A
IRG4PSH71KD
Short Circuit Rated
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UItraFast IGBT
Features
. Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
. High short circuit rating IGBTs, optimized for
motorcontrol
. Minimum switching losses combined with low
conduction losses
. Tightest parameter distribution
n-channel
VCES = 1200V
VCE(on) typ. = 2.97V
@VGE = 15V, lc = 42A
. IGBT co-packaged with ultrafast soft recovery
antiparallel diode
. Creepage distance increased to 5.35mm
Benefits
. Highest current rating copack IGBT
. Maximum power density, twice the power
handling of the TO-247, less space than TO-264
. HEXFREDTM diode optimized for operation with
IGBT, to minimize EMI, noise and switching losses
SUPER - 247
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emir Voltage 1200 V
lc @ Tc = 25°C Continuous Collector Current 78
lc @ Tc = 100°C Continuous Collector Current 42
ICM Pulsed Collector Current (D 156 A
ILM Clamped Inductive Load Current © 156
IF @ To = 100°C Diode Continuous Forward Current 42
IFM Diode Maximum Forward Current 156
tsc Short Circuit V1flthstand Time 10 ps
VGE Gate-to-Emitter Voltage i 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 350
Pro @ Tc = 100°C Maximum Power Dissipation 140
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance\ Mechanical
Parameter Min Typ. Max. Units
ReJc Junction-to-Case - IGBT - - 0.36
Rac Junction-to-Case - Diode - - 0.69 °C/W
Recs Case-to-Sink, flat, greased surface - O.24 -
ReJA Junction-to-Ambient, typical socket mount - - 38
Recommended Clip Force 20.0(2.0) - - N (kgf)
Weight - 6 (0.21) - g (oz)
1
5/11/99
IRG4PSH71KD International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
CES Collector-to-Emi) Breakdown Voltages 1200 - - V VGE = 0V, k: = 250PA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 1.1 - V/°C VGE = 0V, lc = 10mA
Vegan.) Collector-to-Emitter Saturation Voltage - 2.97 3.9 lc = 42A VGE = 15V
- 3.44 - V Ic = 78A See Fig. 2, 5
- 2.60 - k: = 42A, Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250pA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mV/°C VCE = VGE, Ic = 1.5mA
gfe Forward Transconductance © 25 38 - S VCE = 50V, Ic = 42A
ICES Zero Gate Voltage Collector Current - - 500 HA VGE = 0V, VCE = 1200V
- - 10 mA VGE = 0V, VCE = 1200V, To = 150°C
VFM Diode Forward Voltage Drop - 2.5 3.7 V Ic = 42A See Fig. 13
- 2.4 - l: = 42A, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = A20V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 410 610 Ic = 42A
Qge Gate - Emitter Charge (turn-on) - 47 70 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 145 220 VGE = 15V
tdwn) Turn-On Delay Time - 67 -
t, Rise Time - 84 - ns To = 25°C
tum) Turn-Off Delay Time - 230 350 k: = 42A, Vcc = 800V
tf Fall Time - 130 190 VGE = 15V, Rs = 5.on
E0n Turn-On Switching Loss - 5.68 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 3.23 - mJ and diode reverse recovery
G Total Switching Loss - 8.90 11.6 See Fig. 9,10,18
tsc Short Circuit VWthstand Time 10 - - us Vcc = 720V, To = 125°C
VGE = 15V, Rs = 5.09
td(on) Turn-On Delay Time - 65 - TJ = 150°C, See Fig. 11,18
tr Rise Time - 87 - ns Ic = 42A, Vcc = 800V
tum) Turn-Off Delay Time - 370 - VGE = 15V, Rs = 5.09
tr Fall Time - 290 - Energy losses include "tail"
G Total Switching Loss - 13.7 - mJ and diode reverse recovery
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 5770 - VGE = 0V
Coes Output Capacitance - 400 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 100 - f = 1.0MHz
trr Diode Reverse Recovery Time - 107 160 ns To = 25°C See Fig.
- 160 240 To = 125°C 14 IF = 42A
lrr Diode Peak Reverse Recovery Current - 10 15 A To = 25°C See Fig.
- 16 24 TJ = 125°C 15 VR = 200V
er Diode Reverse Recovery Charge - 680 1020 nC T J = 25°C See Fig.
- 1400 2100 To = 125°C 16 di/dt = 200/Vps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 250 - Alps To = 25°C See Fig.
During tr, - 320 - To = 125°C 17
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