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IRG4PSH71K
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-274AA package
PD - 91687A
Internet onol
a:ciRRectifier PRELIMINARY IRG4PSH71K
Short Circuit Rated
INSULATED GATE BIPOLAR TRANSISTOR UItraFast IGBT
Features
. Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
. High short circuit rating IGBTs, optimized for G VCE(on) typ. = 2.97V
motorcontrol
. Minimum switching losses combined with low E @VGE = 15V, lc = 42A
conduction losses
. Tightest parameter distribution n-channel
. Creepage distance increased to 5.35mm
l/ces = 1200V
Benefits
. Highest current rating IGBT
. Maximum power density, twice the power
handling of the TO-247, less space than TO-264
SUPER - 247
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
lc @ Tc = 25°C Continuous Collector Current 78
Ic @ Tc = 100°C Continuous Collector Current 42
ICM Pulsed Collector Current co 156 A
ILM Clamped Inductive Load Current © 156
tsc Short Circuit Withstand Time 10 us
VGE Gate-to-emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy a 170 mJ
Po @ Tc = 25°C Maximum Power Dissipation 350 W
Pro @ Tc = 100°C Maximum Power Dissipation 140
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Thermal Resistance\ Mechanical
Parameter Min. Typ. Max. Units
Rsoc Junction-to-Case - - 0.36
Recs Case-to-Sink, flat, greased surface - 0.24 - °CNV
ReJA Junction-to-Ambient, typical socket mount - - 38
Recommended Clip Force 20.0(2.0) - - N (kgf)
Weight - 6 (0.21) - g (oz)
1
5/11/99
IRG4PSH71K
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 1200 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 1.1 V/''C VGE = 0V, Ic = 10mA
- 2.97 3.9 k: = 42A VGE = 15V
Vcaow) Collector-to-Emi) Saturation Voltage - 3.44 - V k: = 78A See Fig.2, 5
- 2.60 - Ic = 42A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mV/°C VCE = VGE, Ic = 1.5mA
ge, Forward Transconductance © 25 38 - S VCE = 50V, Ic = 42A
Ices Zero Gate Voltage Collector Current - - 500 pA l/ss = 0V, VCE = 1200V
- - 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
- - 5.0 mA VGE = 0V, VCE = 1200V, TJ = 150°C
IGEs Gate-to-Emilie, Leakage Current - - i100 nA VGE =120V
Switching Characteristics @ T J = 25°C (unless
otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 410 610 lc = 42A
Qge Gate - Emitter Charge (turn-on) - 47 70 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 145 220 VGE = 15V
td(on) Turn-On Delay Time - 45 -
t, Rise Time - 38 - ns Tu = 25°C
tum) Turn-Off Delay Time - 220 340 lc = 42A, Vcc = 960V
tf Fall Time - 160 250 VGE = 15V, Rs = 5.09
G, Turn-On Switching Loss - 2.35 - Energy losses include "tail"
Gr Turn-Off Switching Loss - 3.14 - mJ See Fig. 9,10,14
Ets Total Switching Loss - 5.49 8.3
tsc Short Circuit Withstand Time 10 - - us Vcc = 720V, To = 125°C
VGE = 20V, Rs = 5.09
tam) Turn-On Delay Time - 42 - To = 150°C
tr Rise Time - 41 - ns lc = 42A, Vcc = 960V
td(ott) Turn-Off Delay Time - 460 - VGE = 15V, Rs = 5.on
tr Fall Time - 250 - Energy losses include "tail"
Ets Total Switching Loss - 11.5 - mJ See Fig. 10,11,14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 5770 - VGE = 0V
Coes Output Capacitance - 400 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 100 - f = 1.0MHz
Notes:
co Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See Rr 13b )
Vcc = 80%(VcEs), VGE = 20V, L = 10pH, Rs = 5.09,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature
© Pulse width s: 80ps; duty factor f 0.1%
s Pulse width 5Ops, single shot
