IRG4PSC71K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA packageFeaturesV = 600VCES Hole-less clip/pressure mount package compatible with TO-247 and TO-264, w ..
IRG4PSC71KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-274AA packageFeaturesV = 600V• Hole-less clip/pressure mount package compatibleCES with TO-247 and TO-264, w ..
IRG4PSC71U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-274AA packageFeatures C• UltraFast switching speed optimized for operatingV = 600VCES frequencies 8 to 40kHz ..
IRG4PSH71K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-274AA packageFeaturesV = 1200VCES• Hole-less clip/pressure mount package compatible with TO-247 and TO-264, ..
IRG4PSH71KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA packageFeaturesV = 1200V• Hole-less clip/pressure mount package compatibleCES with TO-247 and TO-264, ..
IRG4PSH71KDPBF ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA packageFeatures
. Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinfo ..
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1107W ,Advanced Universal Serial Bus transceivers
ISP1107W ,Advanced Universal Serial Bus transceivers
IRG4PSC71K
600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA package
International PD-91683B
IsaR Rectifier IRG4PSC71 K
Short Circuit Rated
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
Features
. Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
. High abort circuit rating IGBTs, optimized for G VCE(on) typ. = 1 .83V
motorControl
. Minimum switching losses combined with low E @VGE = 15V, IC = 60A
conduction losses
. Tightest parameter distribution n-channel
. Creepage distance increased to 5.35mm
VCES = 600V
Benefits
. Highest current rating IGBT
. Maximum power density, twice the power
handling of the TO-247, less space than TO-264
Super-247m
Absolute Maximum Ratings
Parameter Max. Units
chs Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 85©
Ic @ To = 100°C Continuous Collector Current 60
ICM Pulsed Collector Current C) 200 A
G, Clamped Inductive Load Current C) 200
tsc Short Circuit Withstand Time 10 us
l/tas Gate-to-Emitter Voltage i 20 V
EARV Reverse Voltage Avalanche Energy C) 180 mJ
Po @ To = 25°C Maximum Power Dissipation 350 W
PD © To = 100°C Maximum Power Dissipation 140
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range I
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Thermal Resistance\ Mechanical
Parameter Min. Typ. Max. Units
ReJc Junction-to-Case - - 0.36
Recs Case-to-Sink, flat, greased surface - 0.24 - °C/W
ReJA Junction-to-Ambient, typical socket mount - - 38
Recommended Clip Force 20.0(2.0) - - N (kgf)
Weight - 6 (0.21) - g (oz)
1
3/18/05
IRG4PSC71 K
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-hitter Breakdown Voltage 600 - - V Vas = 0V, '0 = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 6’ 18 - - V Vas = OV, lc = 1.0A
AV(BR)CE$/ATJ Temperature Coeff. of Breakdown Voltage - 0.5 - VPC VGE = 0V, Ic = 10mA
- 1.83 2.3 k; = 60A Vas = 15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.20 - V Ic = 100A See Fig.2, 5
- 1.81 - Ic = 60A , TJ = 150°C
VGEm.) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -8.0 - mV/°C VCE =VGE, Ic =1.5mA
Ge Forward Transoonductance tly 31 46 - S l/cs = 50V, IC = 60A
ICES Zero Gate Voltage Collector Current - - 500 p A I/es = OV, VCE = 600V
- - 2.0 Vas = 0V, l/cs = 10V, To = 25°C
- - 5.0 mA VGE = 0V, VCE = 600V, To =150°C
IGES Gate-to-hitter Leakage Current - - i100 nA VGE = :20V
Switching Characteristics © Tu = 25''C (unless
otherwise specified)
Parameter Min. Typ. Max. Units Conditions
th Total Gate Charge (turn-on) - 340 510 lc = 60A
Qge Gate - Emitter Charge (turn-on) - 44 66 nC Vcc = 400V See Fig.8
090 Gate - Collector Charge (turn-on) - 160 240 VGE = 15V
td(on) Turn-On Delay Time - 34 -
tr Rise Time - 54 - ns To = 25°C
td(off) Turn-Off Delay Time - 251 377 lc = 60A, Vcc = 480V
tf FallTime - 89 133 VGE = 15V, Rs = 5.09
Em Turn-On Switching Loss - 0.79 - Energy losses include "tail"
Es Turn-Off Switching Loss - 1.98 - m] and diode reverse recovery
Es Total Switching Loss - 2.77 3.1 See Fig. 9,10,18
tsc Short Circuit Withstand Time 10 - - us Vcc = 360V, T: = 125°C
VGE =15V, Rs = 5.09
td(0n) Turn-On Delay Time - 37 - TJ = 150°C, See Fig. 10,11,18
tr RiseTime - 56 - ns k: = 60A, Vcc = 480V
td(off) Turn-Off Delay Time - 356 - VGE = 15V, Rs = 5.09,
k FallTime - 177 - Energy losses include "tail"
Ets Total Switching Loss - 5.5 - m] and diode reverse recovery
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 6900 - VGE = 0V
Ca, Output Capacitance - 730 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 190 - f = 1.0MHz
J' egepetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Vcc = 80%(VCES), VGE = 20V, L = 10pH, Rs = 5.0Q,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width 3 80ps; duty factor 3 0.1%.
© Pulse width 5.0ps, single shot.
© Current limited by the package, (Die current = 100A)
