IRG4PH50UD ,1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC packageFeatures• UltraFast: Optimized for high operatingV = 1200VCES frequencies up to 40 kHz in hard s ..
IRG4PH50UDPBF ,1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 1200VCES frequencies up to 40 kHz in hard s ..
IRG4PSC71K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA packageFeaturesV = 600VCES Hole-less clip/pressure mount package compatible with TO-247 and TO-264, w ..
IRG4PSC71KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-274AA packageFeaturesV = 600V• Hole-less clip/pressure mount package compatibleCES with TO-247 and TO-264, w ..
IRG4PSC71U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-274AA packageFeatures C• UltraFast switching speed optimized for operatingV = 600VCES frequencies 8 to 40kHz ..
IRG4PSH71K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-274AA packageFeaturesV = 1200VCES• Hole-less clip/pressure mount package compatible with TO-247 and TO-264, ..
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1107W ,Advanced Universal Serial Bus transceivers
ISP1107W ,Advanced Universal Serial Bus transceivers
IRG4PH50UD
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
PD 91573A
International
TOR Rectifier IRG4PH50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UItraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features c
. UltraFast: Optimized for high operating VCES = 1200V
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
q New IGBT design provides tighter G VcE(on) typ. = 2.78V
parameter distribution and higher efficiency than
previous generations
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in n I h a n n el
bridge configurations
q Industry standard TO-247AC package
E @VGE= 15V, Ic=24A
Benefits
. Higher switching frequency capability than
competitive IGBTs
. Highest efficiency available
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
lc @ Tc = 25°C Continuous Collector Current 45
lo @ To = 100°C Continuous Collector Current 24 A
ICM Pulsed Collector Current (D 180
ILM Clamped Inductive Load Current © 180
IF @ Tc = 100°C Diode Continuous Forward Current 16
IFM Diode Maximum Forward Current 180
VGE Gate-to-Emitter Voltage 1 20 V
PD © Tc = 25°C Maximum Power Dissipation 200 W
PD © To = 100°C Maximum Power Dissipation 78
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N0m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT - - 0.64
ReJC Junction-to-Case - Diode - - 0.83 °C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
RNA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
1
7/7/2000
International
IRG4PH50UD :reoRRectifier
Electrical Characteristics Iii) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage© 1200 - - V VGE = 0V, IC = 250pA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 1.20 - V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 2.56 3.5 Ic = 20A VGE = 15V
- 2.78 3.7 k: = 24A
- 3.20 - V Ic = 45A See Fig. 2, 5
- 2.54 - Ic = 24A, Tu = 150°C
VGEW Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C I/cs = VGE, lc = 250pA
gfe Forward Transconductance © 23 35 - S I/cs = 100V, Ic = 24A
ICES Zero Gate Voltage Collector Current - - 250 pA Vse = 0V, VCE = 1200V
- - 6500 Vss = 0V, VCE = 12OOV, TJ = 150°C
VFM Diode Forward Voltage Drop - 2.5 3.5 V Ic = 16A See Fig. 13
- 2.1 3.0 Ic =16A,TJ = 150°C
lass Gate-to-Emitter Leakage Current - - 1100 nA VGE = t20V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qu Total Gate Charge (turn-on) - 160 250 Ic = 24A
Qge Gate - Emitter Charge (turn-on) - 27 40 nC Vcc = 400V See Fig. 8
Qge Gate - Collector Charge (turn-on) - 53 80 VGE = 15V
tdmn) Turn-On Delay Time - 47 - TJ = 25°C
tr Rise Time - 24 - ns Ic = 24A, Vcc = 800V
Woit) Turn-Off Delay Time - 110 170 Vas = 15V, Rs = 5.09
tf Fall Time - 180 260 Energy losses include "tail" and
Eon Turn-On Switching Loss - 2.10 - diode reverse recovery.
Est Turn-Off Switching Loss - 1.50 - mJ See Fig. 9, 10, 18
Ets Total Switching Loss - 3.60 4.6
Won) Turn-On Delay Time - 46 - TJ = 150°C, See Fig. 11, 18
t, Rise Time - 27 - ns IC = 24A, Vcc = 800V
td(off) Turn-Off Delay Time - 240 - Vas = 15V, Rs = 5.09
t1 Fall Time - 330 - Energy losses include "tail" and
Ets Total Switching Loss - 6.38 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 3600 - VGE = 0V
Coes Output Capacitance - 160 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 31 - f = 1.0MHz
trr Diode Reverse Recovery Time - 90 135 ns To = 25°C See Fig.
- 164 245 To = 125°C 14 IF = 16A
Ir, Diode Peak Reverse Recovery Current - 5.8 10 A To = 25°C See Fig.
- 8.3 15 To = 125°C 15 Va = 200V
G, Diode Reverse Recovery Charge - 260 675 nC TJ = 25°C See Fig.
- 680 1838 TJ = 125°C 16 di/dt = 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 120 - A/ps To = 25°C See Fig.
During tb - 76 - TJ = 125°C 17
2
