IRG4PH50U ,1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 1200V frequencies up to 40 kHz in hard switc ..
IRG4PH50UD ,1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC packageFeatures• UltraFast: Optimized for high operatingV = 1200VCES frequencies up to 40 kHz in hard s ..
IRG4PH50UDPBF ,1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 1200VCES frequencies up to 40 kHz in hard s ..
IRG4PSC71K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA packageFeaturesV = 600VCES Hole-less clip/pressure mount package compatible with TO-247 and TO-264, w ..
IRG4PSC71KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-274AA packageFeaturesV = 600V• Hole-less clip/pressure mount package compatibleCES with TO-247 and TO-264, w ..
IRG4PSC71U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-274AA packageFeatures C• UltraFast switching speed optimized for operatingV = 600VCES frequencies 8 to 40kHz ..
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ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1107W ,Advanced Universal Serial Bus transceivers
ISP1107W ,Advanced Universal Serial Bus transceivers
IRG4PH50U
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
International
TGiR Rectifier
INSULATEDGATEBIPOLARTRANSISTOR
PD - 9157413
IRG4PH50U
Ultra Fast Speed IGBT
Features
. UItraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
I New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
. Optimized for power conversion; SMPS, UPS
and welding
VCES = 1200V
VCE(on) typ. = 2.78V
E @VGE = 15V, k: = 24A
n-channel
. Industry standard TO-247AC package
Benefits
. Higher switching frequency capability than
competitive IGBTs
. Highest efficiency available
. Much lower conduction losses than MOSFETs
. More efhcient than short circuit rated IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
k: @ Tc = 25°C Continuous Collector Current 45
k: @ Tc = 100°C Continuous Collector Current 24 A
ICM Pulsed Collector Current C) 180
ILM Clamped Inductive Load Current © 180
VGE Gate-to-Emitter Voltage i 20 V
EARV Reverse Voltage Avalanche Energy © 170 mJ
PD @ Tc = 25°C Maximum Power Dissipation 200 W
PD © Tc = 100°C Maximum Power Dissipation 78
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 Atom)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - O.64
Rocs Case-to-Sink, Flat, Greased Surface 0.24 - "C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
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IRG4PH50U l:itiirgiitig,l
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi Breakdown Voltage 1200 - - V VGE = 0V, k: = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CESIATJ Temperature Coeff. of Breakdown Voltage - 1.20 - V/°C VGE = 0V, Ic = 1.0mA
- 2.56 3.5 Ic = 20A
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.78 3.7 V Ic = 24A VGE = 75V
- 3.20 - Ic = 45A See Fig.2, 5
- 2.54 - lc = 24A , To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, Ic = 250pA
We Forward Transconductanoe © 23 35 - S VCE = 100V, k: = 24A
- - 250 VGE = 0V, VCE = 1200V
ICES Zero Gate Voltage Collector Current - - 2.0 pA I/ss = 0V, VCE = 24V, To = 25°C
- - 5000 VGE = 0V, VCE = 1200V, Tu = 150°C
IGES GatetoEmitter Leakage Current - - i100 nA VGE = t20V
Switching Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 160 250 k: = 24A
Qge Gate - Emitter Charge (turn-on) - 27 40 n0 Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 53 83 VGE = 15V
tum”) Turn-On Delay Time - 35 -
tr Rise Time - 15 - ns Tu = 25°C
1mm Turn-Off Delay Time - 200 350 Ic = 24A, Vcc = 960V
tr Fall Time - 290 500 VGE = 15V, Rs = 5.09
Eon Turn-On Switching Loss - 0.53 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 1.41 - mJ See Fig. 9, 10, 14
ES Total Switching Loss - 1.94 2.6
tdmn) Turn-On Delay Time - 31 - T: = 150°C
t, Rise Time - 18 - ns Ic = 24A, Vcc = 960V
tam) Turn-Off Delay Time - 320 - VGE = 15V, Rs = 5.09
tr Fall Time - 280 - Energy losses include "tail"
Ets Total Switching Loss - 5.40 - mJ See Fig. 11, 14
Eon Turn-On Switching Loss - 0.35 - To = 25°C, VGE = 15V, Rs = 5.09
Eoff Turn-Off Switching Loss - 1.43 - m J IC = 20A, Vcc = 960V
. . - 1.78 2.9 Ener losses include "tail"
G Total Switching Loss - 4.56 - See giyg. 9, 10, 11, 14, T J = 150°C
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 3600 - VGE = 0V
Coes Output Capacitance - 160 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 31 - f = 1.0MHz
Notes:
co Repetitive rating; VGE= 20V, pulse width limited by © Repetitive rating; pulse width limited by maximum
max. junction temperature. ( See fig. 13b ) junction temperature.
© Vcc = 80%(VcEs), VGE = 20V, L = 10pH, RG = 5.09, © Pulse width s 80ps; duty factor s: 0.1%.
(See Rr 13a) co Pulse width 5.0ps, single shot.
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