IRG4PH50S ,1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC packageFeaturesC Standard: Optimized for minimum saturationV =1200V voltage and low operating frequenc ..
IRG4PH50U ,1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 1200V frequencies up to 40 kHz in hard switc ..
IRG4PH50UD ,1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC packageFeatures• UltraFast: Optimized for high operatingV = 1200VCES frequencies up to 40 kHz in hard s ..
IRG4PH50UDPBF ,1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 1200VCES frequencies up to 40 kHz in hard s ..
IRG4PSC71K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA packageFeaturesV = 600VCES Hole-less clip/pressure mount package compatible with TO-247 and TO-264, w ..
IRG4PSC71KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-274AA packageFeaturesV = 600V• Hole-less clip/pressure mount package compatibleCES with TO-247 and TO-264, w ..
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ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1107W ,Advanced Universal Serial Bus transceivers
ISP1107W ,Advanced Universal Serial Bus transceivers
IRG4PH50S
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
International
:raRRectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD -91712A
IRG4PH50S
Standard Speed IGBT
Features
. Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. Industry standard TO-247AC package
VCES =1200V
VCE(on) typ. = 1.47V
E @VGE=15V, lc=33A
n-channel
Benefits
q Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
lc @ To = 25°C Continuous Collector Current 57
IC @ To = 100°C Continuous Collector Current 33 A
ICM Pulsed Collector Current00 114
ILM Clamped Inductive Load Current © 114
Vss Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy@ 270 mJ
PD @ To = 25°C Maximum Power Dissipation 200 W
PD @ To = 100°C Maximum Power Dissipation 80
TJ Operating Junction and -55 to +150
Tsrs Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RM; Junction-to-Case - 0.64
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °CNV
RNA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6.0 (0.21) - g (oz)
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7/7/2000
llRG4PH50S $431221:
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 1200 - - V Vss = 0V, k; = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V l/ss = 0V, Ic = 1.0 A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 1.22 - V/°C Vas = 0V, Ic = 2.0 mA
- 1.47 1.7 Ic = 33A I/ss =15V
VCE(0N) Collector-to-Emitter Saturation Voltage - 1.75 - V Ic = 57A See Fig.2, 5
- 1.55 - k: = 33A , Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250pA
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage - -11 - mW'C VCE = VGE, IC = 250pA
ge, Forward Transconductance © 27 40 - S VCE = 100V, Ic = 33A
ICES Zero Gate Voltage Collector Current - - 250 p A Vas = 0V, I/cs = 1200V
- - 2.0 Vas = 0V, ch = 10V, TJ = 25°C
- - 1000 Var = 0V, VCE = 1200V, Tu = 150°C
legs Gate-to-Emitter Leakage Current - - i100 nA VGE = t20V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 167 251 Ic = 33A
Qge Gate - Emitter Charge (turn-on) - 25 38 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 55 83 I/ss =15V
tam) Turn-On Delay Time - 32 -
tr Rise Time - 29 - ns Tu = 25°C
tam) Turn-Off Delay Time - 845 1268 Ic = 33A, Vcc = 960V
t, Fall Time - 425 638 VGE = 15V, Rs = 5.09
Ea, Turn-On Switching Loss - 1.80 - Energy losses include "tail"
Es, Turn-Off Switching Loss - 19.6 - mJ See Fig. 9, IO, 14
Es Total Switching Loss - 21.4 44
tum) Turn-On Delay Time - 32 - To = 150°C,
tr Rise Time - 30 - ns k: = 33A, Vcc = 960V
td(oit) Turn-Off Delay Time - 1170 - VGE = 15V, Rs = 5.09
tt Fall Time - 1000 - Energy losses include "tail"
Ets Total Switching Loss - 37 - mJ See Fig. 10,11,14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 3600 - Vas = 0V
CDes Output Capacitance - 160 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 30 - f = 1.0MHz
Notes:
C) Repetitive rating; I/cus = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
C) Vcc = 80%(Vcss), Vas = 20V, L = 10pH, Re = 5.0O, © Pulse width f 80ps; duty factor S 0.1%.
(See fig. 13a) s Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
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