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IRG4PH50KD
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
International
:rartRectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD- 91575B
IRG4PH50KD
Short Circuit Rated
UItraFast IGBT
Features C
. High short circuit rating optimized for motor control, VCES = 1200V
tsc =10ps, vac: 720v, TJ = 125°C,
VGE = 15V v = 2 77V
. Combines low conduction losses with high G CE(on) typ. .
switching speed
. Tighter parameter distribution and higher efficiency E @VGE = 15V, lc = 24A
than previous generations
. IGBT co-packaged with HEXFREDTM ultrafast, n 'Ch an n el
ultrasoft recovery antiparallel diodes
Benefits
. Latest generation 4 IGBT's offer highest power density
motor controls possible
. HEXFFiEDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
. This part replaces the IRGPH50KD2 and IRGPH50MD2
products
. For hints see design tip 97003 TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ To = 25°C Continuous Collector Current 45
lo @ To = 100°C Continuous Collector Current 24
ICM Pulsed Collector Current C) 90 A
ILM Clamped Inductive Load Current © 90
IF @ Tc = 100°C Diode Continuous Forward Current 16
IFM Diode Maximum Forward Current 90
tsc Short Circuit Withstand Time 10 us
VGE Gate-to-Emitter Voltage i 20 V
PD © To = 25°C Maximum Power Dissipation 200 W
PD @ To = 100°C Maximum Power Dissipation 78
TI, Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibfoin (1.1 Nom)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - IGBT - - 0.64
Rm Junction-to-Case - Diode - - 0.83 °C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
7/7/2000
International
IRG4PH50KD TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-emitter Breakdown Voltages 1200 - - V Vss = 0V, Ic = 250pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.91 - V/°C VGE = 0V, lc = 1.0mA
Vcaon) Collector-to-Emitter Saturation Voltage - 2.77 3.5 lc = 24A VGE = 15V
- 3.28 - V IC = 45A See Fig. 2, 5
- 2.54 - IC = 24A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, lc = 250PA
AVGEWIATJ Temperature Coeff. of Threshold Voltage - -1O - mV/°C VCE = Vss, k; = 250pA
gfe Forward Transconductance © 13 19 - S VCE = 100V, Ic = 24A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 12OOV
- - 6500 l/ss = 0V, VCE = 1200V, To = 150°C
VFM Diode Forward Voltage Drop - 2.5 3.5 V k; = 16A See Fig. 13
- 2.1 3.0 Ic =16A,TJ =150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA Vias = t20V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qu Total Gate Charge (turn-on) - 180 270 lc = 24A
Qge Gate - Emitter Charge (turn-on) - 25 38 n0 Vcc = 400V See Fig.8
090 Gate - Collector Charge (turn-on) - 70 110 VGE = 15V
Won) Turn-On Delay Time - 87 -
tr Rise Time - 100 - ns To = 25°C
tam) Turn-Off Delay Time - 140 300 Ic = 24A, Vcc = 800V
tt Fall Time - 200 300 VGE = 15V, Rs = 5.09
Eon Turn-On Switching Loss - 3.83 - Energy losses include "tail"
Est Turn-Off Switching Loss - 1.90 - mJ and diode reverse recovery
Ets Total Switching Loss - 5.73 7.9 See Fig. 9,10,18
tsc Short Circuit Withstand Time 10 - - us Vcc = 720V, TJ = 125°C
VGE = 15V, Rs = 5.on
td(on) Turn-On Delay Time - 67 - To = 150°C, See Fig. 10,11,18
tr Rise Time - 72 - ns IO = 24A, Vcc = 800V
td(off) Turn-Off Delay Time - 310 - VGE = 15V, Rs = 5.09,
t, Fall Time - 390 - Energy losses include "tail"
Ets Total Switching Loss - 8.36 - rm and diode reverse recovery
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 2800 - VGE = 0V
Coes Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 53 - f = 1.0MHz
trr Diode Reverse Recovery Time - 90 135 ns TJ = 25°C See Fig.
- 164 245 TJ=125°C 14 IF=16A
lrr Diode Peak Reverse Recovery Current - 5.8 10 A To = 25°C See Fig.
- 8.3 15 TJ = 125°C 15 Va = 200V
G, Diode Reverse Recovery Charge - 260 675 nC TJ = 25°C See Fig.
- 680 1838 T, = 125°C 16 di/dt = 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 120 - A/ps TJ = 25°C See Fig.
During tr, - 76 - TJ = 125°C 17
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