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IRG4PH40UPBF
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
PD - 95187
International
IeaR Rectifier IRG4PH40UPbF
INSULATEDGATEBIPOLARTRANSISTOR Ultra FastSpeed IGBT
Features c
. UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching, VCES = 1200V
>200 kHz in resonant mode
. New IGBT es/gn .provide 1|ghter . . G VCE(on) typ. = 2.43V
parameter distribution and higher efficiency than
previous generations - -
. Optimized for power conversion; SMPS, UPS E @VGE - 15V, IC - 21A
and welding n-channel
. Industry standard TO-247AC package
q Lead-Free
Benefits
. Higher switching frequency capability than
competitive IGBTs
. Highest efficiency available
. Much lower conduction losses than MOSFETs
. More efficient than short circuit rated IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
Vcss Collector-to-Emitter Breakdown Voltage 1200 V
k; © To = 25°C Continuous Collector Current 41
k: @ Tc = 100°C Continuous Collector Current 21 A
ICM Pulsed Collector Current (D 82
ILM Clamped Inductive Load Current © 82
Vas Gate-to-Emitter Voltage t 20 V
EARV Reverse Voltage Avalanche Energy S 270 mJ
PD @ To = 25°C Maximum Power Dissipation 160 W
PD @ To = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range 'C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.77
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
04/26/04
International
IRG4PH40UPbF IEZR 'kyctifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-emitter Breakdown Voltage 1200 - - V VGE = 0V, k, = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage (ii) 18 - - V VGE = 0V, Is = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.43 - VPC Vas = 0V, k; = 1.0mA
- 2.43 3.1 Ic = 21A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage - 2.97 - V k: = 41A See Fig.2, 5
- 2.47 - k: = 21A , Tu =150°C
VGth) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250pA
AVGE(m/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transoonductance S 16 24 - S VCE = 100V, IC = 21A
Ices Zero Gate Voltage Collector Current - - 250 VGE = OV, VCE = 1200V
- - 2.0 pA Vas = 0V, VCE = 10V, To = 25°C
- - 5000 VGE = 0V, VCE = 1200V, To = 150°C
lass Gate-to-Emitter Leakage Current - - 1100 nA VGE = 1-20V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 86 130 ls = 21A
the Gate - Emitter Charge (turn-on) - 13 20 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 29 44 Vas = 15V
td(on) Turn-On Delay Time - 24 -
t, Rise Time - 24 - ns Tu = 25°C
td(St) Turn-Off Delay Time - 220 330 IC = 21A, Vcc = 960V
tt Fall Time - 180 270 VGE = 15V, Re = lon
Eon Turn-On Switching Loss - 1.04 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 3.40 - mJ See Fig. 9, IO, 14
G Total Switching Loss - 4.44 5.2
td(on) Turn-On Delay Time - 24 - Tu = 150°C,
tr Rise Time - 25 - ns IC = 21A, Vcc = 960V
td(off) Turn-Off Delay Time - 310 - VGE = 15V, Re = 109
tt Fall Time - 380 - Energy losses include "tail"
Ets Total Switching Loss - 7.39 - mJ See Fig. 11, 14
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1800 - Vee = 0V
Coes Output Capacitance - 120 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 18 - f = 1.0MHz
Notes:
C) Repetitive rating; Vss = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Vcc = 80%(Vcss), VGE = 20V, L = 10pH, Rs = Ion,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width S 80ps; duty factor 5 0.1%.
s Pulse width 5.0ps, single shot.
