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IRG4PH40UD2
600V Copack IGBT in a TO-3P (TO-247AC) package
International
:raRfuctifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
. UItraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
. New IGBT design provides tighter
parameter distribution and higher efrciency than
previous generations
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
. Industry standard TO-247AC package
Benefits
. Higher switching frequency capability than
competitive IGBTs
. Highest efficiency available
. HEXFRED diodes optimized for performance with
K3BT's . Minimized recovery characteristics require
less/no snubbing.
PD - 94739
IRG4PH40UD2
UItraFast CoPack IGBT
n-channel
VCES = 600V
@VGE = 15V, lc = 20A
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25''C Continuous Collector Current 40 A
lc @ Tc = 100°C Continuous Collector Current 20
low. Pulse Collector Current (D 160
ILM Clamped Inductive Load current (D 160
V @ Tc = 100°C Diode Continuous Forward Current 10
IFM Diode Maximum Forward Current 40
VGE Gate-to-Emitter Voltage $20 V
Po @ To = 25°C Maximum Power Dissipation 160 W
Po @ TC = 100°C Maximum Power Dissipation 65
T, Operating Junction and -55 to +150
Tsms Storage Temperature Range ''C
Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1tOm)
Thermal I Mechanical Characteristics
Parameter Min. Typ. Max. Units
Rm Junction-to-Case- IGBT - - 0.77 'C/W
ROJC Junction-to-Case- Diode - - 2.5
Recs Case-to-Sink, flat, greased surface - 0.24 -
ROJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz.)
1
07/31 /03
|RG4PH4OUD2
Internationd
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmes Collector-to-emitter Breakdown Voltage 600 - - V VGE = 0V, Ic = 250PA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.63 - V/°C VGE = 0V, Ic = 1mA (25°C-150°C)
- 1.72 2.1 V IC = 20A, VGE = 15V, Tu = 25°C
VCE(on) Collector-to-Emitter Saturation Voltage - 2.15 - lc = 40A, VGE = 15V, T: = 125°C
- 1.7 - lc=20A,VsE=15V,Tu=150oC
VGEah, Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGEW/ATJ Threshold Voltage temp. coefficient - -13 - mV/°C VCE = VGE, lc = 250pA
gfe Forward Transconductance s 11 18 - S VCE = 100V, lc = 20A
- - 250 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current - - 2.0 pA VGE = 0V, VCE = 10V, T J = 25°C
- - 2500 VGE = 0V, VCE = 600V, T, = 150°C
VFM Diode Forward Voltage Drop - 3.4 3.8 V IF = 10A, VGE = 0V
- 3.3 3.7 IF = 10A, VGE = 0V, TJ =150°C
IGES Gate-to-Emir Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q9 Total Gate Charge (turn-on) - 110 130 Ic = 20A
Qge Gate-to-Emitter Charge (turn-on) - 18 24 n0 Vcc = 400V
Qgc Gate-to-Collector Charge (turn-on) - 36 53 VGE = 15V
tawn) Turn-On delay time - 23 - IC = 20A, Vcc = 600V
t, Rise time - 27 - ns VGE = 15V, Rs = 109
tdom Turn-Off delay time - 100 110 T, = 25°C
t, Fall time - 280 340 Energy losses inclued "tail"
Eon Turn-On Switching Loss - 1440 - lc = 20A, Vcc = 600V
Eoff Turn-Off Switching Loss - 1410 - pd Veg = 15V, Rs = lon
Em Total Switching Loss - 2850 3740 T: = 25°C
td(on) Turn-On delay time - 22 - lc = 20A, Vcc = 600V
tr Rise time - 32 - ns VGE = 15V, Rs = Ion, L = 1.0mH
tam", Turn-Off delay time - 190 - T, = 150°C
t, Fall time - 630 - Energy losses inclued "tail"
ETS Total Switching Loss - 5360 - pd
LE Internal Emitter Inductance - 13 - nH Measured 5mm froom package
Cies Input Capacitance - 2100 - N/ss = 0V
CDes Output Capacitance - 99 - pF Vcc = 30V
Cres Reverse Transfer Capacitance - 12 - f= 1.0MHz
trr Diode Reverse Recovery Time - 50 76 ns TJ=25°C. Vcc= 200V, V = 10A, di/dt = 200A/ps
- 72 110 TJ=125°C, Vcc = 200v, V = 10A, di/dt = 200A/ps
Irr Diode Peak Reverse Recovery Current - 4.4 7.0 A To=25°C, Vcc= 200V, IF = 10A, di/dt = 200/Ups
- 5.9 8.8 TJ=125°C, Vcc = 200V, V = 10A, di/dt = 200/Ups
G, Diode Reverse Recovery Charge - 130 200 nC Tr-25°C, Vcc= 200V, IF = 10A, di/dt = 200AIps
- 250 380 Tr125''C, Vcc = 200V, [F = 10A, di/dt = 200/Ups
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 210 - Alps TJ=25°C. Vcc= 200V, IF = 10A, di/dt = 200AIps
During tn - 180 - To--125''C, Vcc = 200v, IF = 10A, di/dt = 200A/ps
