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IRG4PH40UD2-E
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
. UItraFast IGBT optimized for high operating
frequencies up to 200kHz in resonant mode
. IGBT co-packaged with HEXFREDTM ultrafast
ultra-soft-recovery anti-parallel diode for use in
resonant circuits
. Industry standard TO-247AD package with
extended leads
Benefits
. Higher switching frequency capability than
competitive IGBTs
. Highest efficiency available
. HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less / no snubbing
Applications
. Induction cooking systems
. Microwave Ovens
PD - 96781
IRG4PH40UD2-E
UItraFast CoPack IGBT
VCES = 1200V
E @VGE =15V, Ic = 21A
n-channel
ry--''.'.,
. Resonant Circuits TO-247AD
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
Ic @ Tc = 25°C Continuous Collector Current 41 A
IC @ Tc = 100°C Continuous Collector Current 21
ICM Pulse Collector Current (D 82
ILM Clamped Inductive Load current © 82
V @ Tc = 100°C Diode Continuous Forward Current 10
IFM Diode Maximum Forward Current 40
I/se Gate-to-Emitter Voltage t20 V
Po @ Tc = 25°C Maximum Power Dissipation 160 W
Pro @ Tc = 100°C Maximum Power Dissipation 65
T J Operating Junction and -55 to +150
Tsm Storage Temperature Range "C
Storage Temperature Range, tor 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 screw
10 lbein (1.1N'm)
Thermal l Mechanical Characteristics
Parameter Min Typ. Max. Units
ROJC Junction-to-Case- IGBT - - 0.77 °C/W
ROJC Junction-to-Case- Diode - - 2.5
Recs Case-to-Sink, flat, greased surface - 0.24 -
RNA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz.)
1
9/17/03
IRG4PH40UD2-E
Internationd
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage © 1200 - - V VGE = 0V, lo = 250PA
V(BR1ECS Emitter-to-Collector Breakdown Voltage 18 - - V VGE = 0V, Ic = 1.0A
AV
- 2.43 3.1 V IC = 21A VGE =15V
Vegan) Collector-to-Emir Saturation Voltage - 2.97 - k: = 41A See Fig.2, 5
- 2.47 - k: = 21A, T: =150°C
VGEW Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250pA
AVGE(.h)/ATJ Threshold Voltage temp. coemcient - -11 - mV/°C VCE = VGE, k: = 250pA
gfe Forward Transconductance C9 16 24 - S ch = 100V, lc = 21A
ICES Zero Gate Voltage Collector Current - - 250 pA N/se = 0V, VCE = 1200V
- - 5000 VGE = 0V, VCE = 1200V, T, = 150°C
VFM Diode Forward Voltage Drop - 3.4 3.8 V IF = 10A See Fig.13
- 3.3 3.7 IF =10A, T: = 150°C
legs Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics ti) Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q, Total Gate Charge (turn-on) - 100 150 lc = 21A
Qge Gate-to-Emi) Charge (turn-on) - 18 24 no Vcc = 400V See Fig.8
Qgc Gate-to-Collector Charge (turn-on) - 34 50 VGE = 15V
tdwn) Turn-On delay time - 22 -
t, Rise time - 26 - ns Ic = 21A, Vcc = 800V
tdom Turn-Off delay time - 100 140 VGE = 15V, Rs = 109
t, Fall time - 200 300 Energy losses include "tail" and
Eon Turn-On Switching Loss - 1950 - diode reverse recovery.
Est Turn-Off Switching Loss - 1710 - pJ See Fig. 9, IO, 11, 18
Em Total Switching Loss - 3660 4490
tam) Turn-On delay time - 21 - TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise time - 25 - ns k: = 21A, Vcc = 800V
tam) Turn-Off delay time - 220 - VGE = 15V, Rs = lon
tr Fall time - 380 - Energy losses include "tail" and
Ers Total Switching Loss - 6220 - pJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 2100 - VGE = 0V
Coes Output Capacitance - 99 - pF Vcc = 30V, See Fig.7
Cres Reverse Transfer Capacitance - 12 - f = 1.0MHz
trr Diode Reverse Recovery Time - 50 76 ns To=25''C See Fig
- 72 110 To--125'C 14 IF = 8.0A
lrr Diode Peak Reverse Recovery Current - 4.4 7.0 A To=25°C See Fig
- 5.9 8.8 To=125'C 15 VR = 200V
er Diode Reverse Recovery Charge - 130 200 nC To=25''C See Fig
- 250 380 To=125''C 16 di/dt = 200A/ps
di(,ec,M/dt Diode Peak Rate of Fall of Recovery - 210 - Alps TJ=25°C See Fig
During tr, - 180 - To--125'C 17
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