IRG4PH40KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageInternational
TOR RectifierINSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UItraFast IGB ..
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IRG4PH40KPBF
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
International
miRRectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 95625
|RG4PH4OKPbF
Short Circuit Rated
UltraFast IGBT
Features
. High short circuit rating optimized for motor control,
tsc =10ps, V00: 720V , Tu --125c'G,
VGE = 15V
. Combines low conduction losses with high
switching speed
. Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
VCES = 1200V
VCE(0n) typ. = 2.74V
E @VsE--15V,lc--15A
n-channel
. Lead-Free
Benefits
. As a Freewheeling Diode we recommend our
HEXFFiEDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
. Latest generation 4 IGBT's offer highest power
density motor controls possible
. This part replaces the IFIGPH40K and IHGPH4OM
devices
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
chs Collector-to-Emir Voltage 1200 V
k; © To = 25°C Continuous Collector Current 30
lo © Tc = 100°C Continuous Collector Current 15 A
IOM Pulsed Collector Current co 60
ILM Clamped Inductive Load Current © 60
tsc Short Circuit Withstand Time 10 us
VGE Gate-to-Emir Voltage :20 V
EARV Reverse Voltage Avalanche Energy © 180 mJ
Po ' Tc = 25°C Maximum Power Dissipation 160 W
PD © Tc = 100°C Maximum Power Dissipation 65
Ts Operating Junction and -55 to +150
TSTG Storage Temperature Range oc
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibfoin (1 AN-m)
Thermal Resistance
Parameter Typ. Max. Units
RENO Junction-to-Case - 0.77
Rscs Case-to-Sink, Flat, Greased Surface 0.24 - OC/W
RQJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
8/3/04
IRG4PH40KPbF
International
TOR Rectifier
Electrical Characteristics a To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
1/wwes Cdlector-to-Emitter Breakdown Voltage 1200 - - V l/ss = 0V, IO = 2500A
V(BmECS Emitter-tcy-Cd/or Breakdown Voltage Ci) 18 - - V l/ss = 0V, Io = 1.0A
AVBmCEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.37 - V/°C VGE = 0V, k; = 1.0mA
- 2.54 - k: = 10A
Vc E(ON) Collector-tcritter Saturation Voltage - 2.74 3.4 V '0 =15A I/se =15V
- 3.29 - Io = 30A See Fig.2, 5
- 2.53 - lo: 15A, To-- 150°C
VGECIN) Gate Threshold Voltage 3.0 - 6.0 Vcs = VGE. IO = 250pA
AVG Em/ATJ Temperature Coeff. of Threshdd Voltage - -3.3 - mVfC Vcs = VGE, Io = 250pA
9te Forward Ttanscmductance s 8.0 12 - S Vcs = 100 V, IO = 15A
- - 250 Vss = 0V, VCE = 1200V
ICES Zero Gate Voltage Collector Current - - 2.0 pA Vcs = 0V, VCE = 10V, To = 25°C
- - 3000 Vcis = 0V, VCE = 1200V, Ts = 150°C
legs Gate-to Emitter Leakage Current - - 1100 nA Vss = t20V
Switching Characteristics a Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (tum-on) - 94 140 Io = 15A
Qge Gate - Emitter Charge (turn-on) - 14 22 n0 Vcc = 400V See Fig.8
ng Gate - Collector Charge (tum-on) - 37 55 l/se = 15V
tam) Tum-On Delay Time - 30 -
t, Rise Time - 22 - ns Ts = 25°C
tum”) Tum-Off Delay Time - 200 300 IQ = 15A, Vcc = 960V
t Fall Time - 150 230 VCE = 15V, RG = lon
Eor, Tum-On Switching Loss - 0.73 - Energy losses include "tail"
E0“ Tum-Off Switching Loss - 1.66 - mJ See Fig. 9,10,14
Ee, Total Switching Loss - 2.39 2.9
u, Short Circuit Withstand Time 10 - - us Vcc = 720V, TJ = 125°C
I/se =15V,F1G =10f2
tam) Tum-On Delay Time - 29 - To = 150°C,
t, Rise Time - 24 - Io = 15A, Vcc = 960V
tdmm Tum-Off Delay Time - 870 - ns I/se = 15V, Rs = 109
t Fall Time - 330 - Energy losses include "tail"
Ee Total Switching Loss - 4.93 - mJ See Fig. 10,11 ,14
Eon Tum-On Switching Loss - 0.37 - To = 25°C, VGE = 15V, Rs = 109
Eon Tum-Ott Switching Loss - 0.89 - mJ Io = 10A, Vcc = 960V
E13 Total Switching Loss - 1.26 - Energy losses include "tail"
Ls Intemal Emitter Inductance - 13 - nH Measured 5mm from package
Ces Input Capacitance - 1600 - Veg = 0V
Coes Output Capacitance - 77 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 26 - f = 1.0MHz
Details of note C) through s are on the last page
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