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IRG4PH40KD
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
International
:raRRectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD- 91577B
IRG4PH40KD
Short Circuit Rated
UltraFast IGBT
Features C
. High short circuit rating optimized for motor control, VCES = 1200V
tsc =10ps, v00: 720v, TJ = 125°C,
VGE = 15V -
. Combines low conduction losses with high G VCE(on) typ. - 2.74V
switching speed
. Tighter parameter distribution and higher efficiency E @VGE = 15V, IC = 15A
than previous generations
q IGBT co-packaged with HEXFREDTM ultrafast, n -ch an n el
ultrasoft recovery antiparallel diodes
Benefits
. Latest generation 4 IGBT's offer highest power density
motor controls possible
q HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
. This part replaces the IRGPH40KD2 and IRGPH40MD2
products
. For hints see design tip 97003 TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
lc @ To = 25°C Continuous Collector Current 30
k: © To = 100°C Continuous Collector Current 15
ICM Pulsed Collector Current C) 60 A
ILM Clamped Inductive Load Current © 60
IF @ To = 100°C Diode Continuous Forward Current 8.0
IFM Diode Maximum Forward Current 130
tsc Short Circuit Withstand Time 10 us
VGE Gate-to-Emitter Voltage i 20 V
PD @ Ts = 25°C Maximum Power Dissipation 160 W
PD @ To = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTS Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. IO lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rsx; Junction-to-Case - IGBT - - 0.77
Rsuc Junction-to-Case - Diode - - 1.7 "C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
1
2/7/2000
International
IRG4PH40KD TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltages 1200 - - V Vas = 0V, Ic = 250pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.37 - V/°C Vas = 0V, k; = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 2.74 3.4 lc = 15A VGE = 15V
- 3.29 - V Ic = 30A See Fig. 2, 5
- 2.53 - Ic = 15A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -3.3 - mV/°C VCE = Vas, k; = 250pA
gfe Forward Transconductance © 8.0 12 - S VCE = 100V, Ic = 15A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 1200V
- - 3000 V95 = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop - 2.6 3.3 V Ic = 8.0A See Fig. 13
- 2.4 3.1 Ic = 8.0A, TJ = 125°C
IGES Gate-to-Emitter Leakage Current - - :100 nA Vss = t20V
Switching Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qu Total Gate Charge (turn-on) - 94 140 Ic = 15A
Qge Gate - Emitter Charge (turn-on) - 14 22 nC Vcc = 400V See Fig.8
090 Gate - Collector Charge (turn-on) - 37 55 V95 = 15V
tdwn) Turn-On Delay Time - 50 -
tr Rise Time - 31 - ns TJ = 25°C
tum) Turn-Off Delay Time - 96 140 k: = 15A, Vcc = 800V
tf Fall Time - 220 330 VGE = 15V, Rs = lon
Eon Turn-On Switching Loss - 1.31 - Energy losses include "tail"
Est Turn-Off Switching Loss - 1.12 - mJ and diode reverse recovery
Ets Total Switching Loss - 2.43 2.8 See Fig. 9,10,18
tsc Short Circuit Withstand Time 10 - - us Vcc = 720V, TJ = 125°C
Vas = 15V, Rs = lon , Von; < 500V
Won) Turn-On Delay Time - 49 - To = 150°C, See Fig. 10,11,18
tr Rise Time - 33 - ns k: = 15A, Vcc = 800V
tam) Turn-Off Delay Time - 290 - VGE = 15V, Rs = Ion,
tt Fall Time - 440 - Energy losses include "tail"
Ets Total Switching Loss - 5.1 - mJ and diode reverse recovery
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1600 - Vas = 0V
thes Output Capacitance - 77 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance - 26 - f = 1.0MHz
trr Diode Reverse Recovery Time - 63 95 ns To = 25°C See Fig.
- 106 160 TJ =125°C 14 IF = 8.0A
Ir, Diode Peak Reverse Recovery Current - 4.5 8.0 A To = 25°C See Fig.
- 6.2 11 To = 125°C 15 Va = 200V
Qrr Diode Reverse Recovery Charge - 140 380 nC To = 25°C See Fig.
- 335 880 To = 125°C 16 di/dt = 200Aps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 133 - A/ps To = 25°C See Fig.
During tr, - 85 - TJ = 125°C 17
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