IRG4PH30KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures 0
. High short circuit rating optimized for motor control, -
ts, =10ys, Vcc-- 720v, To ..
IRG4PH40K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 1200VCES t =10µs, V = 720V , ..
IRG4PH40KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control, V = 1200VCES t =10µs, V = 720V , ..
IRG4PH40KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageInternational
TOR RectifierINSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UItraFast IGB ..
IRG4PH40U ,1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 1200V frequencies up to 40 kHz in hard switc ..
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ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
IRG4PH30KPBF
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
International
miRRectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 95401
|RG4PH30KPbF
Short Circuit Rated
UltraFast IGBT
Features c
. High short circuit rating optimized for motor control, -
tsc =10ps, Vcc-- 720V, Tu =12500, VCES - 1200V
VGE = 15V
. Combines low conduction losses with high VCE(on)typ. = 3.10V
switching speed
. Latest generation. design .p.rovide.s. tighter parameter E @VGE = 15V, lo = 10A
distribution and higher efficiency than preVIous
generations n-channel
q Lead-Free
Benefits
. As a Freewheeling Diode we recommend our
HEXFFIEDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
. Latest generation 4 IGBT'S offer highest power
density motor controls possible
. This part replaces the flGPH30K and |RGPH30M
devices
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
Io © TC = 25°C Continuous Collector Cu rrent 20
lo © Tc =100°C Continuous Collector Cu rrent 10 A
ICM Pulsed Collector Current C) 40
Im Clamped Inductive Load Current © 40
u, Short Circuit Withstand Time 10 us
I/se Gate-to-Emitter Voltage :20 V
EARV Reverse Voltage Avalanche Energy © 121 tri)
PD © Tc = 25°C Maximum Power Dissipation 100 W
PD © Tr, = 100°C Maximum Power Dissipation 42
T: Ope rating Junction and -55 to +150
Tsms Storage Temperature Range 'C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbtoin (1.1Nom)
Thermal Resistance
Parameter Typ, Max. Units
ReJC Junction-to-Case - 1 .2
R908 Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
Ras; Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
6/17/04
IRG4PH30KPbF
International
TOR Rectifier
Electrical Characteristics a To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 1200 - - V VGE = 0V, IO = 250pA
V(BR)EOS Emitter-to-Collector Breakdown Voltage Ci) 18 - - V l/se = 0V, IO = 1.0A
AVBRJCEs/ATJ Temperature Coeff. ct Breakdown Voltage - 0.19 - V/°C VGE =0V, IO = 2.0mA
- 3.10 4.2 IC=10A VGE=15V
Voaom CollectoMtyEmitterSaturatcn Voltage - 3.90 - V IC = 20A See Fig.2, 5
- 3.01 - IC=10A,TJ=150°C
Its E(Ih) Gate Threshold Voltage 3.0 - 6.0 VCE = Var Io = 250PA
AVGEWIATJ Temperature Coeff. of Threshold Voltage - -12 - mVPC VCE = VGE, k: = 250pA
9te Forward Ttansconductance S 4.3 6.5 - S VCE = 100 V, Io = 10A
ICES Zem Gate Voltage Collector Current - - 250 pA l/se = OV, l/cs = 1200V
- - 2.0 VGE = 0V, l/cs =10V, T, = 25°C
- - 2000 VGE = 0V, I/cs =1200V,TJ =150°C
IGES Gate-to-Emi) Leakage Current - - :100 nA VGE = eUN
Switching Characteristics a To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (tum-on) - 53 80 IO = 10A
Qge Gate - Emitter Charge (tum-on) - 9.0 14 nC Vcc = 400V See Fig.8
(Ar, Gate - Collector Charge (turn-on) - 21 32 l/ss = 15V
tam) Turn-On Delay Time - 28 -
tr Rise Time - 23 - ns T., = 25°C
Tam) Tum-Off Delay Time - 200 300 Io =10A, Vcc = 960V
t FalITime - 110 170 I/rss =15V, Rs = 239
Rs, Tum-On Switching Loss - 0.64 - Energy losses include "tail"
Eon Turn-Off Switching Loss - 0.92 - nt) See Fig. 9,10,14
Es Total Switching Loss - 1.56 2.4
u, Short Circuit Withstand Time 10 - - us V00 = 720V, T., = 125°C
l/ss =15V, Rs = 23n
tam) Turn-On Delay Time - 27 - To = 150°C,
tr RiseTime - 26 - IQ = 10A, Vcc = 960V
tam) Tum-Off Delay Time - 310 - ns Vss =15v, RG = 23n
t1 FalITime - 330 - Energy losses include "tail"
Et, Total Switching Loss - 3.18 - mJ See Fig. 10,11,14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Ces Input Capacitance - 800 - l/ss = 0V
Coes Output Capacitance - 60 - pF V00 = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 14 - f =1.0MHz
Notes:
C) Repetitive rating; l/cs = 20V, pulse width limited by
max. junction temperature. (See fig. 13b )
© Vcc = 80%(Vces), VGE = 20V, L = 10pH, Rs =239,
(See fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
20 Pulse width S 80ps; duty factor s 0.1%.
(9 Pulse width 5.0ps, single shot.
