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IRG4PH30KDIRN/a12000avai1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package


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IRG4PH30KD
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
IRG4PH30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD- 91579A
Short Circuit Rated
UltraFast IGBT
Thermal Resistance
Absolute Maximum Ratings
FeaturesFeaturesFeaturesFeaturesFeatures

 High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
 Combines low conduction losses with high
switching speed
 Tighter parameter distribution and higher efficiency
than previous generations
 IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
 Latest generation 4 IGBT's offer highest power density
motor controls possible
 HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
 This part replaces IRGPH30MD2 products
 For hints see design tip 97003
Benefits

1
IRG4PH30KD
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IRG4PH30KD
3
Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output CharacteristicsFig. 3 - Typical Transfer Characteristics
IRG4PH30KD
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case

Temperature
IRG4PH30KD
5
Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate

Resistance
Fig. 10 - Typical Switching Losses vs.

Junction Temperature
IRG4PH30KD
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
Fig. 11 - Typical Switching Losses vs.

Collector Current
Fig. 12 - Turn-Off SOA

Instantaneous Forward Current ( A )
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