IRG4PH30KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control, V = 1200VCES t =10µs, V = 720V , ..
IRG4PH30KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures 0
. High short circuit rating optimized for motor control, -
ts, =10ys, Vcc-- 720v, To ..
IRG4PH40K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 1200VCES t =10µs, V = 720V , ..
IRG4PH40KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control, V = 1200VCES t =10µs, V = 720V , ..
IRG4PH40KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageInternational
TOR RectifierINSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UItraFast IGB ..
IRG4PH40U ,1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 1200V frequencies up to 40 kHz in hard switc ..
ISO7420MD ,Low-Power Dual-Channel Isolators 8-SOIC -40 to 125Features 3 DescriptionThe ISO7420, ISO7420M and ISO7421 provide1• Highest Signaling Rate: 1 Mbpsgal ..
ISO7421D ,Dual Channel, 1/1, 1Mbps Digital Isolator 8-SOIC -40 to 125Features 3 DescriptionThe ISO7420, ISO7420M and ISO7421 provide1• Highest Signaling Rate: 1 Mbpsgal ..
ISO7520CDW ,Low-Power 5 KVrms Dual Digital Isolators 16-SOIC -40 to 105Features 3 DescriptionThe ISO7520C and ISO7521C provide galvanic1• Highest Signaling Rate: 1 Mbpsis ..
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ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
IRG4PH30KD
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
IRG4PH30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD- 91579A
Short Circuit Rated
UltraFast IGBT
Thermal Resistance
Absolute Maximum Ratings
FeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
Combines low conduction losses with high
switching speed
Tighter parameter distribution and higher efficiency
than previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
Latest generation 4 IGBT's offer highest power density
motor controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces IRGPH30MD2 products
For hints see design tip 97003
Benefits1
IRG4PH30KD
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IRG4PH30KD
3
Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)
Fig. 2 - Typical Output CharacteristicsFig. 3 - Typical Transfer Characteristics
IRG4PH30KD
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltagevs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. CaseTemperature
IRG4PH30KD
5
Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. GateResistance
Fig. 10 - Typical Switching Losses vs.Junction Temperature
IRG4PH30KD
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
Fig. 11 - Typical Switching Losses vs.Collector Current
Fig. 12 - Turn-Off SOAInstantaneous Forward Current ( A )