IRG4PH30K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 1200VCES t =10µs, V = 720V , ..
IRG4PH30KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control, V = 1200VCES t =10µs, V = 720V , ..
IRG4PH30KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures 0
. High short circuit rating optimized for motor control, -
ts, =10ys, Vcc-- 720v, To ..
IRG4PH40K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 1200VCES t =10µs, V = 720V , ..
IRG4PH40KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control, V = 1200VCES t =10µs, V = 720V , ..
IRG4PH40KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageInternational
TOR RectifierINSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UItraFast IGB ..
ISO7420MD ,Low-Power Dual-Channel Isolators 8-SOIC -40 to 125Features 3 DescriptionThe ISO7420, ISO7420M and ISO7421 provide1• Highest Signaling Rate: 1 Mbpsgal ..
ISO7421D ,Dual Channel, 1/1, 1Mbps Digital Isolator 8-SOIC -40 to 125Features 3 DescriptionThe ISO7420, ISO7420M and ISO7421 provide1• Highest Signaling Rate: 1 Mbpsgal ..
ISO7520CDW ,Low-Power 5 KVrms Dual Digital Isolators 16-SOIC -40 to 105Features 3 DescriptionThe ISO7520C and ISO7521C provide galvanic1• Highest Signaling Rate: 1 Mbpsis ..
ISO7521CDWR ,Low-Power 5 KVrms Dual Digital Isolators 16-SOIC -40 to 105Features 3 DescriptionThe ISO7520C and ISO7521C provide galvanic1• Highest Signaling Rate: 1 Mbpsis ..
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
IRG4PH30K
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
International
IEZR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD -91580A
IRG4PH30K
Short Circuit Rated
UItraFast IGBT
Features
. High short circuit rating optimized for motor control,
tsc =10ps, VCC= 720V, T: = 125°C,
I/ss = 15V
. Combines low conduction losses with high
switching speed
I Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
VCES = 1200V
E @VsE--15V,lc--10A
n-channel
Benefits
. As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
. Latest generation 4 IGBT's offer highest power
density motor controls possible
. This part replaces the IRGPHSOK and IRGPHSOM
devices
r)r9.i.'.eaT'
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ Tc = 25°C Continuous Collector Current 20
lo @ Tc = 100°C Continuous Collector Current 10 A
ICM Pulsed Collector Current co 40
u, Clamped Inductive Load Current © 40
tsc Short Circuit Withstand Time 10 us
Vss Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 121 m]
Po @ Tc = 25°C Maximum Power Dissipation 100 W
Po @ Tc = 100°C Maximum Power Dissipation 42
Tu Operating Junction and -55 to +150
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1 .6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Reuc Junction-to-Case - 1 .2
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
2/7/2000
International
IRG4PH30K TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 1200 - - V VGE = 0V, IC = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, IC = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.19 - VPC VGE = 0V, Ic = 2.0mA
- 3.10 4.2 k: = 10A Vas =15V
VCE(0N) Collector-to-Emi) Saturation Voltage - 3.90 - V k; = 20A See Fig.2, 5
- 3.01 - |C=1OA,TJ=150°C
Vegan) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mVPC VCE = VGE, k; = 250pA
Be Forward Transconductance s 4.3 6.5 - S VCE = 100 V, Ic = 10A
ICES Zero Gate Voltage Collector Current - - 250 pA Vas = OV, VCE = 1200V
- - 2.0 Vas = 0V, Vas = 10V, TJ = 25°C
- - 2000 VGE = 0V, VCE = 1200V, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - 1100 nA VGE = A0V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 53 80 IC = 10A
Qge Gate - Emitter Charge (turn-on) - 9.0 14 n0 Vcc = 400V See Fig.8
09c Gate - Collector Charge (turn-on) - 21 32 Vas = 15V
td(on) Turn-On Delay Time - 28 -
tr RiseTime - 23 - ns To = 25°C
tast) Turn-Off Delay Time - 200 300 lc =1OA, Vcc = 960V
t, FaIITime - 110 170 VGE = 15V, Rs = 239
Ei,, Turn-On Switching Loss - 0.64 - Energy losses include "tail"
Eon Turn-Off Switching Loss - 0.92 - rnJ See Fig. 9,10,14
Eg Total Switching Loss - 1.56 2.4
tsc Short Circuit Withstand Time 10 - - us Vcc = 720V, To = 125°C
VGE =15V, Rs = 239
tam...) Turn-On Delay Time - 27 - TJ = 150°C,
tr RiseTime - 26 - Ic = 10A, Vcc = 960V
tam Turn-Off Delay Time - 310 - ns VGE = 15V, Rs = 23n
tf FaIITime - 330 - Energy losses include "tail"
E15 Total Switching Loss - 3.18 - ml See Fig. 10,11,14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 800 - VGE = 0V
Coes Output Capacitance - 60 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 14 - f =1.0MHz
Notes:
co Repetitive rating; VGE: 20V, pulse width limited by © Repetitive rating; pulse width limited by maximum
max. junction temperature. ( See fig. 13b ) junction temperature.
© Vcc = 80%(VCES)a VGE = 20V, L = 10pH, Re =23f2, © Pulse width f 80ps; duty factor f 0.1%.
(See fig. 13a) .
s Pulse width 5.0ps, single shot.
2
