IRG4PH20KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures c
. High short circuit rating optimized for motor control, -
tsc =10ps, vcc= 720v, To ..
IRG4PH30K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 1200VCES t =10µs, V = 720V , ..
IRG4PH30KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control, V = 1200VCES t =10µs, V = 720V , ..
IRG4PH30KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures 0
. High short circuit rating optimized for motor control, -
ts, =10ys, Vcc-- 720v, To ..
IRG4PH40K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 1200VCES t =10µs, V = 720V , ..
IRG4PH40KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control, V = 1200VCES t =10µs, V = 720V , ..
ISO7420FED ,Low-Power Dual Channel Digital Isolators 8-SOIC -40 to 125 SLLSE45F–DECEMBER 2010–REVISED JULY 2015Changes from Revision C (March 2011) to Revision D Page• C ..
ISO7420MD ,Low-Power Dual-Channel Isolators 8-SOIC -40 to 125Features 3 DescriptionThe ISO7420, ISO7420M and ISO7421 provide1• Highest Signaling Rate: 1 Mbpsgal ..
ISO7421D ,Dual Channel, 1/1, 1Mbps Digital Isolator 8-SOIC -40 to 125Features 3 DescriptionThe ISO7420, ISO7420M and ISO7421 provide1• Highest Signaling Rate: 1 Mbpsgal ..
ISO7520CDW ,Low-Power 5 KVrms Dual Digital Isolators 16-SOIC -40 to 105Features 3 DescriptionThe ISO7520C and ISO7521C provide galvanic1• Highest Signaling Rate: 1 Mbpsis ..
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ISP1102W ,Advanced Universal Serial Bus transceiver
IRG4PH20KPBF
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
International
Tart, Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 95624
|RG4PH20KPbF
Short Circuit Rated
UltraFast IGBT
Features
. High short circuit rating optimized for motor control,
tsc =10ps, Vcc = 720V , To = 125°C,
VGE = 15V
. Combines low conduction losses with high
switching speed
. Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
n-channel
VCES = 1200V
VCE(on)typ. = 3.17V
@VGE =15v, Ic = 5.0A
. Lead-Free
Benefits
. As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
. Latest generation 4 IGBT's offer highest power
density motor controls possible
TCcy17AC)
Absolute Maximum Ratings
Parameter Max. Units
l/CES Collector-to- Emitter Voltage 1200 V
Ic @ Tc = 25''C Continuous Collector Current 11
Ic © Tc = 100°C Continuous Collector Current 5.0 A
ICM Pulsed Collector Current OD 22
ILM Clamped Inductive Load Current C) 22
u, Short Circuit Withstand Time 10 us
l/CE Gate-to-Emi) Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 130 mJ
PD © Tc = 25''C Maximum Power Dissipation 60 W
PD © Tc = 100°C Maximum Power Dissipation 24
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1+m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 2.1
Recs Case-to-Sink, Flat, Greased Surface 0.24 - ''C/W
Raua Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
8/3/04
Downloaded from: http://www.datasheetcata|o_q.com/
IRG4PH20KPbF
International
Electrical Characteristics © To = 25°C (unless otherwise specified)
OR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BWIS Collector-to-Emi" Breakdown Voltage 1200 - - V Veg = OV, k: = 250pA
V(BRECS Emitter-to-Collector Breakdown Vdtage 6) 18 - - V VGE = OV, Ic = 1.0A
AV(BR)CESIATJ Temperature Coeff. of Breakdown Voltage - 1.13 - V/°C I/as = OV, lc = 2.5mA
- 3.17 4.3 Ic = 5.0A VGE =15V
VCE(ON) Collector-to-Emi" Saturation Voltage - 4.04 - V lc = 11A See Fig.2, 5
- 2.84 - k: = 5.0A , Tu = 150°C
Veam) Gate Threshold Voltage 3.5 - 6.5 VCE --Var k: = 250uA
AVSE(th/ATU Temperature Coeff. of Threshold Voltage - -10 - mW'C I/cs = We, Ic =1mA
gfe Forward Transconductance CO 2.3 3.5 - S VCE = 100 V, k: = 5.0A
ICES Zero Gate Vdtage Collector Current - - 250 HA I/ae = OV, VCE = 1200V
- - 2.0 Veg = ov, VCE = lov, Tu = 25°C
- - 1000 Vas = OV, VCE = 1200V, T., = 150°C
legs Gate-ttyEmiiter Leakage Current - - i100 nA l/ss = :20V
Switching Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Unlts Conditions
Qg Total Gate Charge (turn-on) - 28 43 le = 5.0A
Qge Gate - Emitter Charge (turn-on) - 4.4 6.6 nC Vcc = 400V See Fig.8
090 Gate - Collector Charge (turn-on) - 12 18 VGE = 15V
tdm) Turn-On Delay Time - 23 -
tr Rise Time - 26 - ns Tu = 25°C
tam) Turn-Off Delay Time - 93 140 Ic =5.0A, Vcc = 960V
tf Fall Time - 270 400 l/os =15V, Rs = 509
Eon Turn-On Switching Loss - 0.45 - Energy losses include "tail"
Est Turn-Off Switching Loss - 0.44 - mJ See Fig. 9,10,14
Ets Total Switching Loss - 0.89 1.2
tsc Short Circuit Withstand Time 10 - - us Vcc = 720V, Tu-- 125°C
Vos =15V, Ro = 50f2
Hon) Turn-On Delay Time - 23 - Tu = 150°C.
tr Rise Time - 28 - lc = 5.0A, Vcc = 960
tam) Turn-Off Delay Time - 100 - ns Ws = 15V, Ro = 509
tf Fall Time - 620 - Energy losses include "tail"
Ets Total Switching Loss - 1.7 - mJ See Fig. 10,11,14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 435 - VGE = 0V
C0es Output Capacitance - 44 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 8.3 - f = 1.0MHz
Notes:
C) Repetitive rating: Vas = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b)
© Vcc = 80%(VcEs), Vss = 20V, L = 10pH, Rs =50n,
(See fig. 13a)
© Repetitive rating: pulse width limited by maximum
junction temperature.
C4) Pulse width S 8005; duty factor E 0.1%.
G) Pulse width 5.0us. single shot.
