IRG4PH20KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures• High short circuit rating optimized for motor control, V = 1200VCES t =10μs, V = 720V , ..
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IRG4PH30K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 1200VCES t =10µs, V = 720V , ..
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IRG4PH30KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures 0
. High short circuit rating optimized for motor control, -
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IRG4PH20KD
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
International PD- 91777
TOR Rectifier IRG4PH20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE UItraFast IGBT
Features
. High short circuit rating optimized for motor control, VCES = 1200V
tsc =10ps, v00: 720V, TJ = 125°C,
VGE = 15V -
. Combines low conduction losses with high G VcE(on) typ. - 3.17V
switching speed
. Tighter parameter distribution and higher efficiency E @VGE = 15V, k: = 5.0A
than previous generations
. IGBT co-packaged with HEXFREDTM ultrafast, n-ch a n nel
ultrasoft recovery antiparallel diodes
Benefits
. Latest generation 4 IGBT's offer highest power density
motor controls possible
. HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emir Voltage 1200 V
Ic @ Tc = 25°C Continuous Collector Current 11
Ic @ Tc = 100°C Continuous Collector Current 5.0
ICM Pulsed Collector Current co 22 A
ILM Clamped Inductive Load Current © 22
IF @ Tc = 100°C Diode Continuous Forward Current 5.0
IFM Diode Maximum Forward Current 22
tsc Short Circuit Vthtand Time 10 us
VGE Gate-to-Emitter Voltage l 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 6O
PD @ Tc = 100°C Maximum Power Dissipation 24
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf-in (1.1 N'm)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - IGBT - - 2.1
Rm Junction-to-Case - Diode - - 3.5 "C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
www.Irf.com 1
6/25/98
IRG4PH20KD
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CE5 Collector-to-Emi) Breakdown Voltages 1200 - - V VGE = 0V, Ic = 250pA
AV
Vegan) Collector-to-Emi) Saturation Voltage - 3.17 4.3 lc = 5.0A VGE = 15V
- 4.04 - V lc = 11A See Fig. 2, 5
- 2.84 - k: = 5.0A, T: = 150°C
Vsiuth) Gate Threshold Voltage 3.5 - 6.5 VCE = VGE, k: = 250PA
AVGEMIATJ Temperature Coeff. of Threshold Voltage - -10 - mV/°C VCE = VGE, Ic = 1mA
gfe Forward Transconductance © 2.3 3.5 - S VCE = 100V, Ic = 5.0A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 1200V
- - 1000 VGE = ov, VCE = 1200V, To = 150°C
VFM Diode Forward Voltage Drop - 2.5 2.9 V Ic = 5.0A See Fig. 13
- 2.2 2.6 Ic = 5.0A, Tu = 150°C
lees Gate-to-Emitter Leakage Current - - A100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qq Total Gate Charge (turn-on) - 28 43 lc = 5.0A
Qge Gate - Emitter Charge (turn-on) - 4.4 6.6 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 12 18 VGE = 15V
td(on) Turn-On Delay Time - 50 -
tr Rise Time - 30 - ns To = 25°C
tam) Turn-Off Delay Time - 100 150 lc = 5.0A, Vcc = 800V
tt Fall Time - 250 380 VGE = 15V, Rs = 509
E0n Turn-On Switching Loss - 0.62 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.30 - mJ and diode reverse recovery
Ets Total Switching Loss - 0.92 1.2 See Fig. 9,10,18
tsc Short Circuit VWthstand Time 10 - - us Vcc = 720V, To = 125°C
VGE = 15V, Rs = 50n
td(on) Turn-On Delay Time - 50 - To = 150°C, See Fig. 10,11,18
tr Rise Time - 30 - ns Ic = 5.0A, Vcc = 800V
td(off) Turn-Off Delay Time - 110 - VGE = 15V, Rs = 509,
k Fall Time - 620 - Energy losses include "tail"
Ets Total Switching Loss - 1.6 - mJ and diode reverse recovery
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 435 - VGE = 0V
Coes Output Capacitance - 44 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance - 8.3 - f = 1.0MHz
trr Diode Reverse Recovery Time - 51 77 ns To = 25°C See Fig.
- 68 102 To = 125''C 14 IF = 5.0A
lrr Diode Peak Reverse Recovery Current - 6.0 9.0 A To = 25°C See Fig.
- 7.0 11 To = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 183 274 nC T J = 25°C See Fig.
- 285 427 To = 125°C 16 di/dt = 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 380 - Alps To = 25°C See Fig.
During h, - 307 - To = 125°C 17
