IRG4PH20K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures• High short circuit rating optimized for motor control,V = 1200VCES t =10μs, V = 720V , ..
IRG4PH20KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures• High short circuit rating optimized for motor control, V = 1200VCES t =10μs, V = 720V , ..
IRG4PH20KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures c
. High short circuit rating optimized for motor control, -
tsc =10ps, vcc= 720v, To ..
IRG4PH30K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 1200VCES t =10µs, V = 720V , ..
IRG4PH30KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control, V = 1200VCES t =10µs, V = 720V , ..
IRG4PH30KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures 0
. High short circuit rating optimized for motor control, -
ts, =10ys, Vcc-- 720v, To ..
ISO7242MDWG4 ,Quad Channel, 2/2, 150Mbps, Digital Isolator 16-SOIC -40 to 125 SLLS868T–SEPTEMBER 2007–REVISED APRIL 2017Simplified Schematic..... 1• Changed the CTI Test Condit ..
ISO7242MDWR ,Quad Channel, 2/2, 150Mbps, Digital Isolator 16-SOIC -40 to 125Maximum Ratings table . 9STG• Changed the Handling Rating table to the ESD Ratings table. ... 9• Ad ..
ISO7420D ,Low Power Dual Channel Isolators 8-SOIC -40 to 125Features 3 DescriptionThe ISO7420, ISO7420M and ISO7421 provide1• Highest Signaling Rate: 1 Mbpsgal ..
ISO7420FED ,Low-Power Dual Channel Digital Isolators 8-SOIC -40 to 125 SLLSE45F–DECEMBER 2010–REVISED JULY 2015Changes from Revision C (March 2011) to Revision D Page• C ..
ISO7420MD ,Low-Power Dual-Channel Isolators 8-SOIC -40 to 125Features 3 DescriptionThe ISO7420, ISO7420M and ISO7421 provide1• Highest Signaling Rate: 1 Mbpsgal ..
ISO7421D ,Dual Channel, 1/1, 1Mbps Digital Isolator 8-SOIC -40 to 125Features 3 DescriptionThe ISO7420, ISO7420M and ISO7421 provide1• Highest Signaling Rate: 1 Mbpsgal ..
IRG4PH20K
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
International
IéaR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD -91776
IRG4PH20K
Short Circuit Rated
UItraFast IGBT
Features c
. Hi h short circuit ratin o timized for motor control,
tscg=10ps, veg: 720vg, 'f J = 125°C, VCES = 1200V
VGE = 15V
. Combines low conduction losses with high G VcE(on) typ. = 3.17V
switching speed
. Latest generation design provides tighter parameter E @VGE = 15V, I C = 5.0 A
distribution and higher efficiency than previous
generations n -chan nel
Benefits
. As a Freewheeling Diode we recommend our l
HEXFREDTM ultrafast, ultrasoft recovery diodes for ti
minimum EMI / Noise and switching losses in the s-ttLb),.);
Diode and IGBT 'ii)ititiii;
. Latest generation 4 IGBT's offer highest power l
density motor controls possible
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
lc @ Tc = 25°C Continuous Collector Current 11
lc @ Tc = 100°C Continuous Collector Current 5.0 A
ICM Pulsed Collector Current co 22
ILM Clamped Inductive Load Current © 22
tsc Short Circuit Withstand Time 10 us
VGE Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 130 mJ
Po @ Tc = 25°C Maximum Power Dissipation 60 W
Po @ Tc = 100°C Maximum Power Dissipation 24
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Ro: Junction-to-Case - 2.1
Recs Case-to-Sink, Flat, Greased Surface 0.24 - "C/W
ReJA Junction-to-Ambient, typical socket mount - 40
IM Weight 6 (0.21) - g (oz)
www.Irf.com 1
IRG4PH20K
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 - - V VGE = 0V, lc = 250pA
V(BR)scs Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, Ic = 1.0A
AV(BR)CE$IATJ Temperature Coeff. of Breakdown Voltage - 1.13 - V/°C VGE = 0V, lc = 2.5mA
- 3.17 4.3 k; = 5.0A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage - 4.04 - V Io = 11A See Fig.2, 5
- 2.84 - IC = 5.0A , To = 150°C
VGE(th) Gate Threshold Voltage 3.5 - 6.5 VCE = VGE, Ic = 250PA
AVGEMIATJ Temperature Coeff. of Threshold Voltage - -10 - mVI°C VCE = VGE, lc = 1mA
We Forward Transconductance © 2.3 3.5 - S VCE = 100 V, Ic = 5.0A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, VCE = 1200V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 1200V, Tu = 150°C
ds Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 28 43 Ic = 5.0A
Qge Gate - Emitter Charge (turn-on) - 4.4 6.6 no Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 12 18 VGE = 15V
tam) Turn-On Delay Time - 23 -
t, Rise Time - 26 - ns T: = 25°C
tum) Turn-Off Delay Time - 93 140 lc =5.0A, Vcc = 960V
tf Fall Time - 270 400 VGE = 15V, Rs = 50n
Eon Turn-On Switching Loss - 0.45 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.44 - mJ See Fig. 9,10,14
Es Total Switching Loss - 0.89 1.2
tsc Short Circuit VWthstand Time 10 - - us Vcc = 720V, To = 125°C
VGE = 15V, Rs = 50n
tdmn) Turn-On Delay Time - 23 - Tu = 150°C,
tr Rise Time - 28 - lc = 5.0A, Vcc = 960
two Turn-Off Delay Time - 100 - ns l/GE = 15v. Rs = 50n
tr Fall Time - 620 - Energy losses include "tail"
Ets Total Switching Loss - 1.7 - mJ See Fig. 10,11,14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 435 - VGE = 0V
Coes Output Capacitance - 44 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 8.3 - f = 1.0MHz
Notes:
co Repet.itiveyatipg; VGE = 20V, pulse width limited by © Repetitive rating; pulse width limited by maximum
max. junction temperature. ( See Ftg. 13b ) junction temperature.
© Vcc = 80%(VcEs), VGE = 20V, L = 10PH, Rs =50f2, © Pulse width f 80ps; duty factor 5 0.1%.
(See fig. 13a)
S Pulse width 5.0ps, single shot.
2
