IRG4PF50WD ,900V Warp 20-100 kHz Copack IGBT in a TO-247AC packageapplications CES• Industry benchmark switching losses improve efficiency of all power supply top ..
IRG4PH20K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures• High short circuit rating optimized for motor control,V = 1200VCES t =10μs, V = 720V , ..
IRG4PH20KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures• High short circuit rating optimized for motor control, V = 1200VCES t =10μs, V = 720V , ..
IRG4PH20KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures c
. High short circuit rating optimized for motor control, -
tsc =10ps, vcc= 720v, To ..
IRG4PH30K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 1200VCES t =10µs, V = 720V , ..
IRG4PH30KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control, V = 1200VCES t =10µs, V = 720V , ..
ISO7242CDWR ,Quad Channel, 2/2, 25Mbps, Digital Isolator 16-SOIC -40 to 125 SLLS868T–SEPTEMBER 2007–REVISED APRIL 2017Simplified Schematic..... 1• Changed the CTI Test Condit ..
ISO7242MDW ,Quad Channel, 2/2, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features 3 DescriptionThe ISO7240x, ISO7241x, and ISO7242x devices are1• 25 and 150-Mbps Signaling ..
ISO7242MDWG4 ,Quad Channel, 2/2, 150Mbps, Digital Isolator 16-SOIC -40 to 125 SLLS868T–SEPTEMBER 2007–REVISED APRIL 2017Simplified Schematic..... 1• Changed the CTI Test Condit ..
ISO7242MDWR ,Quad Channel, 2/2, 150Mbps, Digital Isolator 16-SOIC -40 to 125Maximum Ratings table . 9STG• Changed the Handling Rating table to the ESD Ratings table. ... 9• Ad ..
ISO7420D ,Low Power Dual Channel Isolators 8-SOIC -40 to 125Features 3 DescriptionThe ISO7420, ISO7420M and ISO7421 provide1• Highest Signaling Rate: 1 Mbpsgal ..
ISO7420FED ,Low-Power Dual Channel Digital Isolators 8-SOIC -40 to 125 SLLSE45F–DECEMBER 2010–REVISED JULY 2015Changes from Revision C (March 2011) to Revision D Page• C ..
IRG4PF50WD
900V Warp 20-100 kHz Copack IGBT in a TO-247AC package
International
ISER Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD- 91788
IRG4PF50WD
Features
. Optimized for use in Welding and Switch-Mode
Power Supply applications
. Industry benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest technology IGBT design offers tighter
parameter distribution coupled with
c. VCES = 900V
L VCE(0n) typ. = 2.25V
E @VGE = 15V, IC = 28A
n-channel
exceptional reliability
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
. Industry standard TO-247AC package
Benefits .
. Lower switching losses allow more cost-effective
operation and hence efMient replacement of larger-die
MOSFETs up to 100kHz
. HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and TO_247AC
switching losses
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emilie, Breakdown Voltage 900 V
Ic @ Tc = 25°C Continuous Collector Current 51
lc © Tc = 100°C Continuous Collector Current 28 A
ICM Pulsed Collector Current C) 204
ILM Clamped Inductive Load Current © 204
IF @ Tc = 100°C Diode Continuous Forward Current 16
IFM Diode Maximum Forward Current 204
VGE Gate-to-Emir Voltage 1 20 V
PD @ Tc = 25°C Maximum Power Dissipation 200 W
PD @ Tc = 100°C Maximum Power Dissipation 78
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 Ibfcin (1 .1Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - IGBT - - 0.64
Rac Junction-to-Case - Diode - - 0.83 "C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
IRG4PF50WD
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltages 900 - - V VGE = 0V, lc = 250pA
AV
VCE(on) Collector-to-Emir Saturation Voltage - 2.25 2.7 ' Ic = 28A VGE = 15V
- 2.74 - V lc = 60A See Fig. 2, 5
- 2.12 - 'ic--28A,-ru--15trc
VGEM Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250pA
AVGE<1h)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, IC = 250pA
gfe Forward Transconductance © 26 39 - S VCE = 50V, Ic = 28A
ICES Zero Gate Voltage Collector Current - - 500 pA VGE = 0V, VCE = 900V
- - 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
- - 6.5 mA VGE = 0V, VCE = 900V, Tu = 150°C
VFM Diode Forward Voltage Drop - 2.5 3.5 V IC = 16A See Fig. 13
- 2.1 3.0 Ic = 16A, Tu =150°C
IGEs Gate-to-Emilie, Leakage Current - - i100 nA VGE = _+20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 160 240 lc = 28A
Qge Gate - Emitter Charge (turn-on) - 19 29 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 53 80 VGE = 15V
td(on) Turn-On Delay Time - 71 - TJ = 25°C
tr Rise Time - 50 - ns lc = 28A, Vcc = 720V
tum) Turn-Off Delay Time - 150 220 VGE = 15V, Rs = 5.09
tf Fall Time - 110 170 Energy losses include "tail" and
Eon Turn-On Switching Loss - 2.63 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 1.34 - mJ See Fig. 9, 10, 18
ES Total Switching Loss - 3.97 5.3
tdmn) Turn-On Delay Time - 69 - Tu = 150°C, See Fig. 11, 18
tr Rise Time - 52 - ns lc = 28A, Vcc = 720V
tdm) Turn-Off Delay Time - 270 - VGE = 15V, Rs = 5.09
tf Fall Time - 190 - Energy losses include "tail" and
ES Total Switching Loss - 6.0 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 3300 - VGE = 0V
Coes Output Capacitance - 200 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 45 - f = 1.0MHz
trr Diode Reverse Recovery Time - 90 135 ns Tu = 25°C See Fig.
- 164 245 Tu = 125°C 14 IF = 16A
Irr Diode Peak Reverse Recovery Current - 5.8 10 A Tu = 25°C See Fig.
- 8.3 15 Tu = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 260 675 nC TJ = 25°C See Fig.
- 680 1838 Tu = 125°C 16 di/dt = 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 120 - Alps Tu = 25°C See Fig.
During tts - 76 - TJ = 125°C 17
2 www.Irf.com
