IRG4PF50W ,900V Warp 20-100 kHz Discrete IGBT in a TO-247AC packageapplications• Industry benchmark switching losses improve efficiency of all power supply topolog ..
IRG4PF50WD ,900V Warp 20-100 kHz Copack IGBT in a TO-247AC packageapplications CES• Industry benchmark switching losses improve efficiency of all power supply top ..
IRG4PH20K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures• High short circuit rating optimized for motor control,V = 1200VCES t =10μs, V = 720V , ..
IRG4PH20KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures• High short circuit rating optimized for motor control, V = 1200VCES t =10μs, V = 720V , ..
IRG4PH20KPBF ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures c
. High short circuit rating optimized for motor control, -
tsc =10ps, vcc= 720v, To ..
IRG4PH30K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 1200VCES t =10µs, V = 720V , ..
ISO7242CDW ,Quad Channel, 2/2, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features 3 DescriptionThe ISO7240x, ISO7241x, and ISO7242x devices are1• 25 and 150-Mbps Signaling ..
ISO7242CDWR ,Quad Channel, 2/2, 25Mbps, Digital Isolator 16-SOIC -40 to 125 SLLS868T–SEPTEMBER 2007–REVISED APRIL 2017Simplified Schematic..... 1• Changed the CTI Test Condit ..
ISO7242MDW ,Quad Channel, 2/2, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features 3 DescriptionThe ISO7240x, ISO7241x, and ISO7242x devices are1• 25 and 150-Mbps Signaling ..
ISO7242MDWG4 ,Quad Channel, 2/2, 150Mbps, Digital Isolator 16-SOIC -40 to 125 SLLS868T–SEPTEMBER 2007–REVISED APRIL 2017Simplified Schematic..... 1• Changed the CTI Test Condit ..
ISO7242MDWR ,Quad Channel, 2/2, 150Mbps, Digital Isolator 16-SOIC -40 to 125Maximum Ratings table . 9STG• Changed the Handling Rating table to the ESD Ratings table. ... 9• Ad ..
ISO7420D ,Low Power Dual Channel Isolators 8-SOIC -40 to 125Features 3 DescriptionThe ISO7420, ISO7420M and ISO7421 provide1• Highest Signaling Rate: 1 Mbpsgal ..
IRG4PF50W
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package
IRG4PF50W
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91710
Features• Optimized for use in Welding and Switch-Mode
Power Supply applications
• Industry benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest technology IGBT design offers tighter
parameter distribution coupled with exceptional
reliability
• Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-
die MOSFETs up to 100kHz
• Of particular benefit in single-ended converters and
Power Supplies 150W and higher
• Reduction in critical Eoff parameter due to minimal
minority-carrier recombination coupled with low on-
state losses allow maximum flexibility in device
application
Benefits
Absolute Maximum Ratings4/15/98
1
Thermal Resistance
IRG4PF50W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Switching Characteristics @ TJ = 25°C (unless otherwise specified)Pulse width ≤ 80μs; duty factor ≤ 0.1%.Pulse width 5.0μs, single shot.
Notes:Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )VCC = 80%(VCES), VGE = 20V, L = 10μH, RG = 5.0Ω,
(See fig. 13a)Repetitive rating; pulse width limited by maximum
junction temperature.
IRG4PF50WLoad Current ( A )
IRG4PF50W
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Collector-to-Emitter Voltage vs.Junction Temperature
Fig. 4 - Maximum Collector Current vs. CaseTemperature
IRG4PF50W5
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Fig. 9 - Typical Switching Losses vs. GateResistance
Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage
IRG4PF50W
Fig. 12 - Turn-Off SOAFig. 11 - Typical Switching Losses vs.Collector-to-Emitter Current
