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IRG4PC60U
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
Internet onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 94443
IRG4PC60U
UItraFast Speed IGBT
Features
. UItraFast: Optimized for high operating
frequencies up to 50 kHz in hard switching,
>200 kHz in resonant mode.
. Generation 4 IGBT design provides tighter
parameter distribution and higher efrciency.
. Industry standard TO-247AC package.
n-channel
VCES = 600V
VCE(on)typ. = 1 .6V
@VGE = 15V, Ic = 40A
Benefits
. Generation 4 IGBT's offer highest efficiency available.
. IGBT's optimized for specified application conditions.
. Designed for best performance when used with IR
Hexfred & IR Fred companion diodes.
Absolute Maximum Ratings
TO-247AC
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 75
lo @ Tc = 100°C Continuous Collector Current 40 A
ICM Pulsed Collector Current co 300
u, Clamped Inductive Load Current © 300
VGE Gate-to-Emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy s 200 ml
PD @ Tc = 25°C Maximum Power Dissipation 520 W
PD @ Tc = 100°C Maximum Power Dissipation 210
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.24
Ras Case-to-Sink, Flat, Greased Surface 0.24 - "CM/
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
04/26/02
IRG4PC60U International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi Breakdown Voltage 600 - ---- V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 17 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.28 ---- V/°C VGE = 0V, Ic = 1.0mA
- 1.7 2.0 k: = 40A VGE = 15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 1.9 - V k: = 75A See Fig.2, 5
- 1.6 - Ic = 40A , To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage ---- -12 ---- mWC VCE = VGE, Ic = 250pA
ge, Forward Transconductance © 44 59 - S VCE 2 100V, k: = 40A
Ices Zero Gate Voltage Collector Current - - 250 PA l/ss = OV, VCE = 600V
---- ---- 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
- - 5000 VGE = 0V, VCE = 600V, TJ = 150''C
legs Gate-to-Emilie, Leakage Current - - i100 nA VGE = t20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 310 320 lc = 40A
Qge Gate - Emitter Charge (turn-on) - 41 46 nC Vcc = 480V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 110 120 VGE = 15V
tam) Turn-On Delay Time - 39 ----
tr RiseTime ---- 42 - ns Tu = 25''C
tum) Turn-Ott Delay Time ---- 200 Ic = 40A, Vcc = 480V
tf FalITime - 100 VGE = 15V, Rs = 5.on
Er,, Turn-On Switching Loss - 0.28 - Energy losses include "tail"
' Turn-Off Switching Loss ---- 1.1 ---- mJ See Fig. 10, 11, 13, 14
Es Total Switching Loss - 1.3 1.8
tam) Turn-On Delay Time ---- 36 - Tu = 150°C,
t, RiseTime ---- 42 - ns Ic = 40A, Vcc = 480V
td(off) Turn-Off Delay Time - 300 - VGE = 15V, Rs = 5.00
tf FaIITime - 160 - Energy losses include "tail"
Es Total Switching Loss - 2.6 - mJ See Fig. 13, 14
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance ---- 5860 - VGE = 0V
G, Output Capacitance ---- 370 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 75 - f = 1.0MHz
Notes:
co Repetitive rating; VGE= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VCE3), VGE = 20V, L = TBD pH, © Pulse width S 80ps; duty factor f 0.1%.
Rs = 5.0W. (See fig. 13a) S Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
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