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IRG4PC60U-P
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package
PD - 94441
Internet onol
TOR, Rectifier IRG4PC60U-P
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
Features C
. UltraFast: Optimized for high operating
frequencies up to 50 kHz in hard switching and VcEs=600V
>200 kHz in resonant mode.
. Application in UPS, Welding and High Current power
supply. G VCE(on)typ, = 1 .6V
. Generation 4 IGBT design provides tighter
parameter distribution and higher eNciency. E @VGE = 15V, lc = 40A
. Solder plated version of industry standard n-channel
TO-247AC package.
Benefits
. Generation 4 IGBT's offer highest efficiency available.
. Solder plated version of the TO-247 allows the rehow
soldering of the package heatsink to a substrate material.
. Designed for best performance when used with IR
HEXFRED & IR FRED companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 75
lo @ Tc = 100°C Continuous Collector Current 40 A
ICM Pulsed Collector Current (D 300
u, Clamped Inductive Load Current © 300
VGE Gate-to-Emitter Voltage , 20 V
EARV Reverse Voltage Avalanche Energy © 200 m]
Pro @ Tc = 25°C Maximum Power Dissipation 520 W
Pro @ Tc = 100°C Maximum Power Dissipation 210
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Maximum Reflow Temperature© 230 (Time above 183°C (
should not exceed 100s)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 0.24
Recs Case-to-Sink, Flat, Greased Surface 0.24 - ''CIW
Rm Junction-to-Ambient (Typical Socket Mount) - 40
Ravx Junction-to-Ambient (PCB Mount, Steady State)© ---- 20
Wt Weight 6 (0.21) - g (oz)
1
04/26/02
IRG4PC60U-P International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emilie, Breakdown Voltage 600 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage G) 17 - - V VGE = 0V, Ic = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.28 ---- V/°C VGE = 0V, k: = 1.0mA
- 1.7 2.0 lc = 40A VGE = 15V
VCHON) Collector-to-Emi" Saturation Voltage - 1.9 ---- V lc = 75A See Fig.2, 5
- 1.6 - Ic = 40A , Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VGE = VGE, Ic = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -12 ---- mW'C VCE = VGE, Ic = 250pA
gfe Forward Transconductance s 44 59 - S VCE 2 100V, lc = 40A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, VCE = 600V
- - 2.0 N/ss = 0V, I/cs = 10V, Tu = 25°C
- - 5000 VGE = 0V, VCE = 600V, To = 150°C
ds Gate-to-Emile/ups Current - - i100 nA VGE = i20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
0.9 Total Gate Charge (turn-on) - 310 320 lc = 40A
Ae Gate - Emitter Charge (turn-on) - 41 46 nC Vcc = 480V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 110 120 VGE = 15V
tam) Turn-On Delay Time ---- 39 ----
tr Rise Time ---- 42 ---- ns To = 25°C
tam) Turn-Off Delay Time ---- 200 lc = 40A, Vcc = 480V
tr FallTime - 100 VGE = 15V, RG = 5.09
Er,, Turn-On Switching Loss - 0.28 - Energy losses include "tail"
Eoff Turn-Off Switching Loss ---- 1.1 ---- nl) See Fig. 10, 11, 13, 14
EU Total Switching Loss - 1.3 1.8
tam) Turn-On Delay Time ---- 36 ---- To = 150°C,
tr RiseTime - 42 - ns lc = 40A, Vcc = 480V
td(off) Turn-Off Delay Time - 300 - VGE = 15V, RG = 5.09
tr FaIITime - 160 - Energy losses include "tail"
Es Total Switching Loss - 2.6 - nl) See Fig. 13, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance ---- 5860 ---- VGE = 0V
Coes Output Capacitance ---- 370 ---- pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 75 - f = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by Pulse width 5.0ps, single shot.
max. junction temperature. ( See fig. 13b ) When mounted on 1" square PCB ( FR-4 or G-10
© Vcc = 80%(VcEs), VGE = 20V, Rg = 5.0W. Material ). For recommended footprint and soldering
(See Ftg. 13a) techniques refer to application note #AN-994.
© Repetitive rating; pulse width limited by maximum . . " .
junction temperature. © Refer to 1eliP,i,on note # 1023, Surface Mounting of
Larger Devices.
© Pulse width s: 80ps; duty factor 3 0.1%.
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