IRG4PC50WPBF ,600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package IRG4PC50W C
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IRG4PC50W-IRG4PC50WPBF
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
International PD-91657B
lean Rectifier IRG4PC50W
INSULATED GATE BIPOLAR TRANSISTOR
Features C
. Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction) VCES = 600V
applications
. Industry-benchmark switching losses improve
efficiency of all power supply topologies
. 50% reduction of Eoff parameter
. Low IGBT conduction losses
. Latest-generation IGBT design and construction offers n-channel
tighter parameters distribution, exceptional reliability
Benefits
. Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
. Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
. Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300 kHz)
6 VCE(on) max. = 2.30V
E @VGE= 15V, lc=27A
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
Vces Collector-to-Emitter Breakdown Voltage 600 V
k; @ To = 25°C Continuous Collector Current 55
lo @ To = 100°C Continuous Collector Current 27 A
ICM Pulsed Collector Current C) 220
ILM Clamped Inductive Load Current © 220
VGE Gate-to-Emitter Voltage t 20 V
EARV Reverse Voltage Avalanche Energy © 170 mJ
Po © Tc = 25°C Maximum Power Dissipation 200 W
Pro © Tc = 100°C Maximum Power Dissipation 78
Tu Operating Junction and -55 to + 150
TSTS Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 Atom)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 0.64
Recs Case-to-Sink, Flat, Greased Surface 0.24 - ''C/W
RNA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
2/7/2000
International
IRG4PC50W TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V l/ss = 0V, IC = 250pA
V(BR)CES Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, IC = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.41 - VPC VGE = 0V, Ic = 5.0mA
- 1.93 2.3 k: = 27A Vas = 15V
VCE(0N) Collector-to-Emi) Saturation Voltage - 2.25 - V k; = 55A See Fig.2, 5
- 1.71 - k: = 27A , Tu = 150°C
Vegan) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, Ic = 250PA
AVGEah/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = Vss, k; = 1.0mA
Be Forward Transconductance © 27 41 - S VCE = 100 V, Ic = 27A
ICES Zero Gate Voltage Collector Current - - 250 PA Vas = OV, VCE = 600V
- - 2.0 Vas = 0V, VCE = 10V, TJ = 25°C
- - 5000 Vss = 0V, VCE = 600V, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - 1100 nA Vss = A0V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 180 270 IC = 27A
Qge Gate - Emitter Charge (turn-on) - 24 36 " Vcc = 400V See Fig.8
09c Gate - Collector Charge (turn-on) - 63 95 Vas = 15V
tdion) Turn-On Delay Time - 46 -
tr Rise Time - 33 - ns To = 25°C
td(oti) Turn-Off Delay Time - 120 180 Ic = 27A, Vcc = 480V
tt Fall Time - 57 86 VGE = 15V, Rs = 5.09
Eon Turn-On Switching Loss - 0.08 - Energy losses include "tail"
Est Turn-Off Switching Loss - 0.32 - mJ See Fig. 9, IO, 14
Ets Total Switching Loss - 0.40 0.5
td(on) Turn-On Delay Time - 31 - Tu = 150°C,
t, Rise Time - 43 - ns IC = 27A, Vcc = 480V
td(off) Turn-Off Delay Time - 210 - VGE = 15V, Rs = 5.on
tt Fall Time - 62 - Energy losses include "tail"
Ets Total Switching Loss - 1.14 - mJ See Fig. 10,11, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 3700 - VGE = 0V
CoeS Output Capacitance - 260 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 68 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
Vcc = 80%(VcEs), l/ss = 20V, L =10pH, Rs = 5.09,
© Pulse width S 80ps; duty factor 3 0.1%.
s Pulse width 5.0ps, single shot.
