IRG4PC50UPBF ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC packageFeatures C UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
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ISO7241MDWR ,Quad Channel, 3/1, 150Mbps, Digital Isolator 16-SOIC -40 to 125Electrical Characteristics: V and V at 3.3 VCC1 CC213.6 Electrostatic Discharge Caution. 34Operatio ..
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ISO7242A ,Quad Channel, 2/2, 1Mbps, Digital Isolator 16-SOIC -40 to 125FEATURES• 4000-V Isolation, 560-V V APPLICATIONSpeak peak IORM• Industrial Fieldbus– UL 1577 , IEC ..
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IRG4PC50UPBF
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
Internet onol PD-95186
TOR, Rectifier IRG4PC50UPbF
INSULATEDGATEBIPOLARTRANSISTOR UItraFast Speed IGBT
Features c
. UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200 VCES=500V
kHz in resonant mode
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. Industry standard TO-247AC package E @VGE _ 15V, lc _ 27A
. Lead-Free n-channel
G VCE(0n) typ. = 1.65V
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions "Q l
. Designed to be a "drop-in" replacement for equivalent LN
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
k: @ To = 25°C Continuous Collector Current 55
lo @ To = 100°C Continuous Collector Current 27 A
ICM Pulsed Collector Current CO 220
ILM Clamped Inductive Load Current © 220
Vcus Gate-to-Emitter Voltage t 20 V
EARV Reverse Voltage Avalanche Energy © 2O ntl
PD @ To = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 78
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range oC
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case ---- 0.64
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
Ram Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
04/26/04
http://www.loa.com/
IRG4PC50UPbF
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emi) Breakdown Voltage 600 - - V VGE = OV, lc = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 ---- - V VGE = OV, k, = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.60 - V/°C Vas = 0V, lc =1.0mA
- 1.65 2.0 '0 = 27A Vas =15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.0 - V Ic = 55A See Fig.2, 5
- 1.6 - Ic--27A,Tu=15ty'C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mW'C VCE = Var, Ic = 250PA
gfe Forward Transconductance s 16 24 ---- S VCE l 15V, k: = 27A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 2.0 Vas = 0V, VCE =10V,TJ = 25°C
- - 5000 Vas = 0V, VCE = 600V, To = 150°C
ksss Gate-to-Emi) Leakage Current - - +_100 n A VGE = e5EN
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
th Total Gate Charge (turn-on) ---- 180 270 ls = 27A
Qge Gate - Emitter Charge (turn-on) ---- 25 38 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 61 90 VGE = 15V
td(on) Turn-On Delay Time - 32 -
tr RiseTime - 20 - ns T, = 25°C
tdist) Turn-Off Delay Time ---- 170 260 IC = 27A, Vcc = 480V
tt FallTime - 88 130 VGE = 15V, RG = 5.09
Eon Turn-On Switching Loss ---- 0.12 - Energy losses include "tail"
his Turn-Off Switching Loss - 0.54 - trt) See Fig. IO, 11, 13, 14
Es Total Switching Loss - 0.66 0.9
td(on) Turn-On Delay Time - 31 - Tu =150°C,
tr RiseTime ---- 23 - ns IC = 27A, Vcc = 480V
td(off) Turn-Off Delay Time - 230 - VGE = 15V, Re = 5.09
tt FallTime ---- 120 - Energy losses include "tail"
EU Total Switching Loss - 1.6 - trt) See Fig. 13, 14
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 4000 - l/se = 0V
Goes Output Capacitance - 250 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance - 52 - f =1.0MHz
Notes:
(D Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VcEs), Vas = 20V, L = 10pH, Re = 5.0Q, © Pulse width s 80ps; duty factor 3 0.1%.
(See fig. 13a) s Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
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