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IRG4PC50UD-IRG4PC50UD-E
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
International
TOR Rectifier
PD91471B
IRG4PC50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UItraFast CoPack IGBT
Features
. UItraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
. Generation 4 IGBT design provides tighter
parameter distribution and higher emciency than
Generation 3
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
n-channel
VCES = 600V
VCE(on) typ. = 1.65V
@VGE = 15V, Ic = 27A
bridge configurations
. Industry standard TO-247AC package
Benefits
. Generation 4 IGBT's offer highest efMiencies
available
. IGBT's optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
. Designed to be a "drop-in" replacement for equivalent
_F'aelrCe.u"
industry-standard Generation 3 IR IGBT's TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emi) Voltage 600 V
Ic @ To = 25°C Continuous Collector Current 55
Ic @ Tc = 100°C Continuous Collector Current 27
ICM Pulsed Collector Current C) 220 A
ILM Clamped Inductive Load Current © 220
IF @ Tc = 100°C Diode Continuous Forward Current 25
IFM Diode Maximum Forward Current 220
VGE Gate-to-Emitter Voltage i 20 V
PD @ Tc = 25°C Maximum Power Dissipation 200
PD @ Tc = 100°C Maximum Power Dissipation 78
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - IGBT --_____ 0.64
RQJC Junction-to-Case - Diode ------------ 0.83 °C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount ----- ----- 40
Wt Weight - 6 (0.21) - g (oz)
1
12/30/00
International
IRG4PC50UD TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltages 600 - - V VGE = 0V, k: = 250pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.60 - V/°C N/ss = 0V, lc = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.65 2.0 lc = 27A VGE = 15V
- 2.0 - V Ic = 55A See Fig. 2, 5
- 1.6 - Ic = 27A, TJ = 150°C
VGEith) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250PA
AVGE(1h)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mVI°C VCE = VCE, Ic = 250pA
gfe Forward Transconductance GD 16 24 - S VCE = 100V, k: = 27A
Ices Zero Gate Voltage Collector Current ---- - 250 pA VGE = 0V, VCE = 600V
- - 6500 VGE = 0V, VCE = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop - 1.3 1.7 V lc = 25A See Fig. 13
- 1.2 1.5 Ic = 25A, TJ = 150°C
legs Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 180 270 k: = 27A
Qge Gate - Emitter Charge (turn-on) - 25 38 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 61 90 VGE = 15V
td(on) Turn-On Delay Time - 46 - To = 25°C
tr Rise Time ---- 25 - ns Ic = 27A, Vcc = 480V
toem) Turn-Off Delay Time - 140 230 VGE = 15V, Rs = 5.09
tr Fall Time - 74 110 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.99 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 0.59 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 1.58 1.9
td(on) Turn-On Delay Time - 44 - To = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time ---- 27 - ns lc = 27A, Vcc = 480V
tam) Turn-Off Delay Time - 240 - VGE = 15V, Rs = 5.09
tr Fall Time - 130 - Energy losses include "tail" and
Ets Total Switching Loss - 2.3 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance ---- 4000 - VGE = 0V
Coes Output Capacitance - 250 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance ---- 52 - f = 1.0MHz
trr Diode Reverse Recovery Time - 50 75 ns To = 25°C See Fig.
- 105 160 To = 125°C 14 IF = 25A
In Diode Peak Reverse Recovery Current - 4.5 10 A To = 25°C See Fig.
- 8.0 15 To = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 112 375 nC To = 25°C See Fig.
- 420 1200 To = 125°C 16 di/dt 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 250 - Alps Tu = 25°C
During tr, - 160 - To = 125°C
2
