IRG4PC50UD-EPBF ,600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC packageFeaturesC UltraFast: Optimized for high operatingV = 600V frequencies 8-40 kHz in hard switchin ..
IRG4PC50UDPBF , INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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IRG4PC50UD-EPBF
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
International PD-95185
araRRectifier IRG4PC50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
I UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200 VCES = 600V
kHz in resonant mode
. Generation f IPI design Io.royides. Tlghter VCE(on) typ. = 1 .65V
parameter distribution and higher efficiency than G
Generation 3
. IGBT co-packaged with HEXFREDTM ultrafast, E @VGE = IW, lc = 27A
ylt.e-soft-rtcovey anti-parallel diodes for use In n -Ch an n el
bridge configurations
. Industry standard TO-247AC package
. Lead-Free
Benefits
. Generation 4 IGBT's offer highest efficiencies
available
. IGBT's optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
. Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBT's TO-247/C
Absolute Maximum Ratings
Parameter Max. Units
Vcss Collector-to-Emitter Voltage 600 V
Ic @ To = 25°C Continuous Collector Current 55
lo @ Tc = 100°C Continuous Collector Current 27
ICM Pulsed Collector Current CO 220 A
u, Clamped Inductive Load Current © 220
IF @ To = 100°C Diode Continuous Forward Current 25
IFM Diode Maximum Forward Current 220
l/cus Gate-to-Emitter Voltage 1 20 V
PD @ To = 25°C Maximum Power Dissipation 200
P9 @ Tc = 100°C Maximum Power Dissipation 78 W
To Operating Junction and -55 to +150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. IO Ibf-in (1.1 N°m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rch Junction-to-Case - IGBT ------------ 0.64
ROJC Junction-to-Case - Diode ------------ 0.83 ''C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
Ram Junction-to-Ambient, typical socket mount ---------- 40
Wt Weight - 6 (0.21) - g (oz)
1
04/23/04
International
IRG4PC50UDPbF :rcmRectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltages 600 - - V Vss = 0V, Ic = 250pA
AV(BR)CEs/AT Temperature Coeff. of Breakdown Voltage - 0.60 - V/°C VGE = 0V, Ic = 1.0mA
Vegan) Collector-to-Eminer Saturation Voltage - 1.65 2.0 k: = 27A VGE = 15V
- 2.0 - V IC = 55A See Fig. 2, 5
- 1.6 - k, = 27A, To =150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 l/cs = VGE, IC = 250pA
AVGE(1h)/AT Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, k; = 250pA
gfe Forward Transconductance (9 16 24 - S VCE = 100V, k: = 27A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 6500 VGE = 0V, VCE = 600V, Tu = 150°C
l/rs, Diode Forward Voltage Drop - 1.3 1.7 V lc = 25A See Fig. 13
- 1.2 1.5 k, = 25A, To =150°C
IGES Gate-to-Emitter Leakage Current ---- - t100 nA I/ss = e2UN
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Tnfal (29h: Phavgn (hurn.nn) - 1RD 97D I., - Dnts
Qge Gate - Emitter Charge (turn-on) - 25 38 n0 Vcc = 400V See Fig. 8
thr, Gate - Collector Charge (turn-on) ---- 61 90 VGE = 15V
tdmm Turn-On Delay Time ---- 46 - TJ = 25°C
t, RiseTime - 25 - ns Ic = 27A, Vcc = 480V
tdmm Turn-Off Delay Time - 140 230 l/ss = 15V, Rs = 5.09
tt FaIITime - 74 110 Energy losses include "tail" and
E0n Turn-On Switching Loss - 0.99 - diode reverse recovery.
R,, Turn-Off Switching Loss - 0.59 - trt) See Fig. 9, 10, 11, 18
Ets Total Switching Loss ---- 1.58 1.9
tdmm Turn-On DelavTime - 44 - To =150°C, See Fig. 9, 10, 11, 18
t, RiseTime - 27 - ns k: = 27A, Vcc: = 480V
tsom Turn-Off Delay Time - 240 - VGE = 15V, Rs = 5.09
It FallTime - 130 - Energy losses include "tail" and
Es Total Switching Loss - 2.3 - nt) diode reverse recovery.
Ls Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
gm Input Capacitance - 4000 - VGE = 0V
gm Output Capacitance - 250 - pF VCC = 30V See Fig. 7
gm Reverse Transfer Capacitance - 52 - f =1.0MHz
trr Diode Reverse Recovery Time - 50 75 ns TJ = 25°C See Fig.
- 105 160 TJ = 125°C 14 IF = 25A
Irr Diode Peak Reverse Recovery Current ---- 4.5 10 A TJ = 25°C See Fig.
- 8.0 15 Tu =125°C 15 Va = 200V
Qrr Diode Reverse Recovery Charge - 112 375 nC Tu = 25°C See Fig.
- 420 1200 Tu = 125°C 16 di/dt 2OOA/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 250 - Alps TJ = 25°C
Durinqtb - 160 - TJ=12500
2
