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IRG4PC50U
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
Internat onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD 91470F
|RG4PC5OU
Ultra Fast Speed IGBT
Features
. UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
. Generation 4 IGBT design provides tighter
parameter distribution and higher eNciency than
Generation 3
. Industry standard TO-247AC package
n-channel
VCES = 600V
VCE(on)typ.=1-65V
@VGE = 15V, Ic = 27A
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 55
lo @ Tc = 100°C Continuous Collector Current 27 A
ICM Pulsed Collector Current co 220
u, Clamped Inductive Load Current © 220
N/ss Gate-to-Emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy s 20 ml
PD @ Tc = 25°C Maximum Power Dissipation 200 W
PD @ Tc = 100°C Maximum Power Dissipation 78
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.64
Ras Case-to-Sink, Flat, Greased Surface 0.24 - "CM/
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
12/30/00
IRGdPC50U International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi Breakdown Voltage 600 - ---- V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.60 - V/°C VGE = 0V, Ic = 1.0mA
- 1.65 2.0 k: = 27A VGE = 15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.0 - V k: = 55A See Fig.2, 5
- 1.6 - Ic = 27A , To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mWC VCE = VGE, Ic = 250pA
ge, Forward Transconductance © 16 24 - S VCE 2 15V, k: = 27A
Ices Zero Gate Voltage Collector Current - - 250 PA VGE = OV, VCE = 600V
---- ---- 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
- ---- 5000 VGE = 0V, VCE = 600V, TJ = 150°C
legs Gate-to-Emilie, Leakage Current - - i100 nA VGE = t20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 180 270 lc = 27A
099 Gate - Emitter Charge (turn-on) - 25 38 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 61 90 VGE = 15V
tam) Turn-On Delay Time ---- 32 ----
tr RiseTime ---- 20 - ns Tu = 25°C
td(off) Turn-Ott Delay Time ---- 170 260 Ic = 27A, Vcc = 480V
tf FalITime - 88 130 VGE = 15V, Rs = 5.09
Er,, Turn-On Switching Loss -- 0.12 - Energy losses include "tail"
' Turn-Off Switching Loss ---- 0.54 ---- mJ See Fig. 10, 11, 13, 14
Es Total Switching Loss - 0.66 0.9
tam) Turn-On Delay Time ---- 31 - Tu = 150°C,
tr RiseTime - 23 - ns Ic = 27A, Vcc = 480V
td(off) Turn-Off Delay Time - 230 - VGE = 15V, Rs = 5.09
tf FaIITime - 120 - Energy losses include "tail"
Es Total Switching Loss - 1.6 - mJ See Fig. 13, 14
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance ---- 4000 - VGE = 0V
G, Output Capacitance ---- 250 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 52 - f = 1.0MHz
Notes:
(O Repetitive rating; VGE= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 30%(Vces), VGE= 20V, L = 10pH, Re = 5.0O, (4) Pulse width s 80ps; duty factor f 0.1 Yo.
(See ng. 13a) S Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
2
