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IRG4PC50S
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD-91581A
IRG4PC50S
Standard Speed IGBT
Features
. Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. Industry standard TO-247AC package
VCES = 600V
VCE(on) typ. = 1.28V
E @VGE=15V, lc=41A
n-channel
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
k: @ To = 25°C Continuous Collector Current 70
lo © To = 100°C Continuous Collector Current 41 A
ICM Pulsed Collector Current co 140
ILM Clamped Inductive Load Current © 140
Vas Gate-to-Emitter Voltage t 20 V
EARV Reverse Voltage Avalanche Energy © 20 mJ
Po @ To = 25°C Maximum Power Dissipation 200 W
Po @ To = 100°C Maximum Power Dissipation 78
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.64
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6.0 (0.21) - g (oz)
1
2/7/2000
International
IRG4PC50S TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V l/ss = 0V, IC = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, IC = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.75 - VPC VGE = 0V, Ic = 1.0mA
- 1.28 1.36 k: = 41A Vas = 15V
VCE(0N) Collector-to-Emi) Saturation Voltage - 1.62 - V k; = 80A See Fig.2, 5
- 1.28 - |C=41A,TJ=150°C
Vegan) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, Ic = 250PA
AVGEah/ATJ Temperature Coeff. of Threshold Voltage - -9.3 - mV/°C VCE = VGE, k: = 250pA
Be Forward Transconductance © 17 34 - S VCE = 100V, lc = 41A
ICES Zero Gate Voltage Collector Current - - 250 PA Vas = OV, VCE = 600V
- - 2.0 Vas = 0V, VCE = 10V, TJ = 25°C
- - 1000 Vss = 0V, VCE = 600V, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - 1100 nA Vss = A0V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 180 280 IC = 41A
age Gate - Emitter Charge (turn-on) - 24 37 " Vcc = 400V See Fig. 8
%c Gate - Collector Charge (turn-on) - 61 92 Vas = 15V
tdion) Turn-On Delay Time - 33 -
tr Rise Time - 30 - ns To = 25°C
tdm) Turn-Off Delay Time - 650 980 Ic = 41A, Vcc = 480V
tt Fall Time - 400 600 VGE = 15V, Rs = 5.09
Eon Turn-On Switching Loss - 0.72 - Energy losses include "tail"
Est Turn-Off Switching Loss - 8.27 - mJ See Fig. 9, IO, 14
Ets Total Switching Loss - 8.99 13
td(on) Turn-On Delay Time - 31 - Tu = 150°C,
t, Rise Time - 31 - ns IC = 41A, Vcc = 480V
td(off) Turn-Off Delay Time - 1080 - VGE = 15V, Rs = 5.on
tt Fall Time - 620 - Energy losses include "tail"
Ets Total Switching Loss - 15 - mJ See Fig. 11, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 4100 - VGE = 0V
CoeS Output Capacitance - 250 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 48 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VcEs), l/ss = 20V, L =10pH, Rs = 5.09,
(See fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width S 80ps; duty factor 3 0.1%.
s Pulse width 5.0ps, single shot.
