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IRG4PC50KD
600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package
International PD -91582B
ISER Rectifier (IRG4PC50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE UItraFast IGBT
Features C
0 Short Circuit Rated UItraFast: Optimized for high VCES = 600V
operating frequencies >5.0 kHz, and Short Circuit Rated
to10ps @125 C, VGE.= 15V . . VcE(on)typ.=1.84V
0 Generation 4 IGBT design provides tighter parameter G
distribution and higher efficiency than Generation 3 @VGE = 15V, lc = 30 A
o IGBT co-packaged with HEXFREDTM ultrafast, E
ultra-soft recovery anti-parallel diodes for use in n-ch a n n el
bridge configurations
0 Industry standard TO-247AC package
Benefits
0 Generation 4 IGBTs offer highest efficiencies available
0 HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less/no snubbing P
0 Designed to be a "drop-in" replacement for equivalent 1 o'
industry-standard Generation 3 IR IGBTs TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emilie, Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 52
lc © Tc = 100°C Continuous Collector Current 30
ICM Pulsed Collector Current (D 104 A
ILM Clamped Inductive Load Current © 104
IF @ Tc = 100°C Diode Continuous Forward Current 25
IFM Diode Maximum Forward Current 280
tsc Short Circuit 1/Nflthstand Time 10 us
VGE Gate-to-Emir Voltage 1 20 V
PD @ Tc = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Ric Junction-to-Case - IGBT - - 0.64
Ric Junction-to-Case - Diode - - 0.83 °CNV
chs Case-to-Sink, flat, greased surface - 0.24 -
RqJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
1
12/3/98
IRG4PC50KD
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emi) Breakdown Voltage © 600 - - V VGE = 0V, Ic = 250uA
DV(BR)CEs/DTJ Temperature Coeff. of Breakdown Voltage - 0.47 - V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emi) Saturation Voltage - 1.84 2.2 lc = 30A VGE = 15V
- 2.19 - V Ic = 52A see figures 2, 5
- 1.79 - _ lc = 25A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250pA
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage - -12 - mV/°C VCE = VGE, lc = 250uA
gfe Forward Transconductance © 17 24 - S VCE = 100V, IC = 30A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 6500 VGE = 0V, VCE = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop - 1.3 1.7 V lc = 25A see figure 13
- 1.2 1.5 lc = 25A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = i20V
Switching Characteristics @ Tu = 25°C (unless
otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qq Total Gate Charge (turn-on) - 200 300 lc = 30A
Qge Gate - Emitter Charge (turn-on) - 25 38 nC Vcc = 400V see figure 8
Qgc Gate - Collector Charge (turn-on) - 85 127 VGE = 15V
tum) Turn-On Delay Time - 63 -
tr Rise Time - 49 - ns Tu = 25°C
tam) Turn-Off Delay Time - 150 220 Ic = 30A, Vcc = 480V
tf Fall Time - 95 140 VGE = 15V, Rs = 5.0W
Eon Turn-On Switching Loss - 1.61 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.84 - mJ and diode reverse recovery
Ets Total Switching Loss - 2.45 3.0see figures 9,10,18
tsc Short Circuit VWthstand Time 10 - - us Vcc = 360V, Tu = 125°C
VGE = 15V, Rs = 10W ,VCPK < 500V
tum) Turn-On Delay Time - 61 - Tu = 150°C, see figures 11,18
tr Rise Time - 46 - ns IC = 30A, Vcc = 480V
tdm) Turn-Off Delay Time - 310 - VGE = 15V, Rs = 5.0W
tf Fall Time - 170 - Energy losses include "tail"
Ets Total Switching Loss - 3.53 - mJ and diode reverse recovery
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 3200 - VGE = 0V
Coes Output Capacitance - 370 - pF Vcc = 30V see figure 7
Cres Reverse Transfer Capacitance - 95 - f = 1.0MHz
tn Diode Reverse Recovery Time - 50 75 ns Tu = 25°C see figure
- 105 160 T: =125°C 14 IF = 25A
Irr Diode Peak Reverse Recovery Current - 4.5 10 A T: = 25°C see figure
- 8.0 15 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 112 375 nC Tu = 25°C see figure
- 420 1200 TJ = 125°C 16 di/dt 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 250 - Alps Tu = 25°C see figure
During tr, - 160 - Tu = 125°C 17
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