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IRG4PC50K
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91583B
IRG4PC50K
Short Circuit Rated
UItraFast IGBT
Features
. High short circuit rating optimized for motor control,
tsc=10us, @36OV VCE (start), TJ = 125°C,
VGE = 15V
. Combines low conduction losses with high
switching speed
. Latest generation design provides tighter parameter
distribution and higher efficiency than previous
VCES = 600V
E @VGE = 15V, IC = 30A
n-channel
generations
Benefits
. As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
I Latest generation 4 IGBTs offer highest power
density motor controls possible
. This part replaces the IRGPCSOK and IRGPCSOM
devices
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 52
lc @ Tc = 100°C Continuous Collector Current 30 A
ICM Pulsed Collector Current co 104
u, Clamped Inductive Load Current © 104
tsc Short Circuit Nthstand Time 10 ps
VGE Gate-to-Emitter Voltage 120 V
EARV Reverse Voltage Avalanche Energy © 170 m]
Po @ Tc = 25''C Maximum Power Dissipation 200 W
Pro @ Tc = 100°C Maximum Power Dissipation 78
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.64
Recs Case-to-Sink, Flat, Greased Surface 0.24 - 'C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
4/15/2000
IRG4PC50K
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, k: = 250pA
V(BR)Ecs Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, Ic = 1.0A
AV(BR)CEs/ATJ TemperatureCoeff.otBreakdovvnVoltage - 0.47 - 1/f'C l/ss = ov, lc = 1.0mA
- 1.84 2.2 k: = 30A VGE = 15V
VCE(ON) Collector-to-EmitterSaturationVoltage - 2.19 - V Io = 52A See Fig.2, 5
- 1.79 - lc = 30A , Tu = 150°C
VGEW Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(1h)/ATJ TemperatureCoemofThresholdVoltage - -12 - mWC VCE = VGE, Ic = 250pA
gfe Forward Transconductance © 17 24 - S VCE = 100 V, k: = 30A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, I/cs = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25''C
- - 5000 VGE = 0V, VCE = 600V, To = 150°C
legs Gate-to-Emi) Leakage Current - - i100 nA VGE = EBN
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
q, Total Gate Charge (turn-on) - 200 300 lc = 30A
Qge Gate - Emitter Charge (turn-on) - 25 38 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 85 130 VGE = 15V
tdwn) Turn-On Delay Time - 38 -
tr RiseTime - 34 - ns Tu = 25°C
tdom Turn-Off Delay Time - 160 240 lc = 30A, Vcc = 480V
tf FalITime - 79 120 VGE = 15V, Rs = 5.09
Er,, Turn-On Switching Loss - 0.49 - Energy losses include "tail"
' Turn-Off Switching Loss - 0.68 - ml See Fig. 9,10,14
Eg Total Switching Loss - 1.12 1.4
tsc Short Circuit VWthstand Time 10 - - ps Vcc = 400V, To = 125°C
VGE = 15V, Rs = lon , VCPK < 500V
tdwn) Turn-On Delay Time - 37 - TJ = 150°C,
tr RiseTime - 35 - Ic = 30A, Vcc = 480V
tam Turn-Off Delay Time - 260 - ns VGE = 15V, Rs = 5.09
tr FalITime - 170 - Energy losses include "tail"
EU Total Switching Loss - 2.34 - mJ See Fig. 11,14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 3200 - VGE = 0V
Gs Output Capacitance - 370 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 95 - f = 1.0MHz
Notes:
co Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See Ftg. 13b)
© Vcc = 80%(VcEs), vGE = 20v, L = 10pH, Rs = 5.09
co Repetitive rating; pulse width limited by maximum
junction temperature.
G) Pulse width f 80ps; duty factor f 0.1%.
6) Pulse width 5.0ps, single shot.
