IRG4PC50FD ,600V Fast 1-8 kHz Copack IGBT in a TO-247AC packageFeatures• Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4PC50K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
IRG4PC50KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC packageFeatures C● Short Circuit Rated UltraFast: Optimized for highV = 600VCESoperating frequencies >5.0 ..
IRG4PC50S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC packageFeatures C Standard: Optimized for minimum saturationV = 600VCES voltage and low operating freq ..
IRG4PC50U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC packageFeatures C• UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4PC50UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC packageFeatures• UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switch ..
ISO7241ADWR ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125maximum ratings may cause permanent damage to the device. These are stress ratingsonly and function ..
ISO7241ADWRG4 ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125These devices have limited built-in ESD protection. The leads should be shorted together or the dev ..
ISO7241AMDWREP ,Enhanced Product Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -55 to 125FEATURES• 4000-V Isolation, 560-V V SUPPORTS DEFENSE, AEROSPACE,peak peak IORMAND MEDICAL APPLICATI ..
ISO7241AMDWREPG4 , 1-Mbps QUAD DIGITAL ISOLATORS
ISO7241CDW ,2.5 kVrms, 25 Mbps, 4-Channel 3/1 Digital Isolator 16-SOIC -40 to 125Maximum Ratings table . 9STG• Changed the Handling Rating table to the ESD Ratings table. ... 9• Ad ..
ISO7241CDWR ,2.5 kVrms, 25 Mbps, 4-Channel 3/1 Digital Isolator 16-SOIC -40 to 125 SLLS868T–SEPTEMBER 2007–REVISED APRIL 2017Simplified Schematic..... 1• Changed the CTI Test Condit ..
IRG4PC50FD
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package
International
::raRRectifier
PD 91469B
IRG4PC50FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Fast CoPack IGBT
Features
. Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. IGBT co-packaged with HEXFREDTM ultrafast,
n-channel
VCES = 600V
@VGE = 15V, k: = 39A
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
. Industry standard TO-247AC package
Benefits
. Generation -4 IGBT's offer highest efficiencies
available
. IGBT's optimized for specihc application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
o Designed to be a "drop-in" replacement for equivalent
q%'rreTe
industry-standard Generation 3 IR IGBT's TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 70
IC @ Tc = 100°C Continuous Collector Current 39
ICM Pulsed Collector Current co 280 A
Lu Clamped Inductive Load Current © 280
IF @ Tc = 100°C Diode Continuous Forward Current 25
IFM Diode Maximum Forward Current 280
VGE Gate-to-Emitter Voltage * 20 V
Po @ Tc = 25''C Maximum Power Dissipation 200
Po @ Tc = 100°C Maximum Power Dissipation 78
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min Typ Max. Units
ReJC Junction-to-Case - IGBT -eeee---_ 0.64
Rox: Junction-to-Case - Diode ------------ 0.83 °CNV
Recs Case-to-Sink, flat, greased surface - 0.24 -
Ram Junction-to-Ambient, typical socket mount ---------- 40
Wt Weight - 6 (0.21) - g (oz)
1
12/30/00
International
IRG4PC50FD IEZR 'kyctifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltages 600 - - V VGE = 0V, Ic = 250pA
AV
VCE(on) Collector-to-Emitter Saturation Voltage - 1.45 1.6 Ic = 39A VGE = 15V
- 1.79 - V Ic = 70A See Fig. 2, 5
- 1.53 - Ic = 39A, TJ = 150°C
Vegan) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250PA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage - -14 - mV/°C VCE = VGE, Ic = 250PA
gig Forward Transconductance © 21 30 - S VCE = 100V, Ic = 39A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 6500 VGE = 0V, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop ---- 1.3 1.7 V Ic = 25A See Fig. 13
- 1.2 1.5 lc = 25A, TJ =150"C
ds Gate-to-Emitter Leakage Current - - i100 nA VGE = t20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
(2, Total Gate Charge (turn-on) ---- 190 290 lc = 39A
Qge Gate - Emitter Charge (turn-on) - 28 42 nC Vcc = 400V See Fig. 8
Qqc Gate - Collector Charge (turn-on) - 65 97 VGE = 15V
td(on) Turn-On Delay Time ---- 55 - TJ = 25°C
tr Rise Time ---- 25 - ns k: = 39A, Vcc = 480V
td(off) Turn-Off Delay Time - 240 360 VGE = 15V, Rs = 5.09
t, FallTime ---- 140 210 Energy losses include "tail" and
Er,, Turn-On Switching Loss ---- 1.5 ---- diode reverse recovery.
E017 Turn-Off Switching Loss - 2.4 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 3.9 5.0
tuion) Turn-On Delay Time ---- 59 - TJ = 150°C, See Fig. 9, 10, 11, 18
t, Rise Time - 27 - ns Ic = 39A, Vcc = 480V
tam) Turn-Off Delay Time ---- 400 - VGE = 15V, Rs = 5.09
tf FallTime ---- 260 - Energy losses include "tail" and
EU Total Switching Loss ---- 6.5 ---- m1 diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 4100 - VGE = 0V
Coes Output Capacitance - 250 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance ---- 49 - f = 1.0MHz
trr Diode Reverse Recovery Time ---- 50 75 ns TJ = 25°C See Fig.
- 105 160 TJ = 125°C 14 IF = 25A
Irr Diode Peak Reverse Recovery Current - 4.5 10 A TJ = 25°C See Fig.
- 8.0 15 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 112 375 nC TJ = 25°C See Fig.
- 420 1200 T: = 125°C 16 di/dt 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 250 ---- Alps T: = 25°C See Fig.
During tr, - 160 - TJ = 125°C 17
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