IRG4PC50F ,600V Fast 1-8 kHz Discrete IGBT in a TO-247AC packageFeatures C Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching, >2 ..
IRG4PC50FD ,600V Fast 1-8 kHz Copack IGBT in a TO-247AC packageFeatures• Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4PC50K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
IRG4PC50KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC packageFeatures C● Short Circuit Rated UltraFast: Optimized for highV = 600VCESoperating frequencies >5.0 ..
IRG4PC50S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC packageFeatures C Standard: Optimized for minimum saturationV = 600VCES voltage and low operating freq ..
IRG4PC50U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC packageFeatures C• UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
ISO7241ADW ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125MAXIMUM RATINGSVALUE UNIT(2)V Supply voltage , V , V –0.5 to 6 VCC CC1 CC2V Voltage at IN, OUT, EN ..
ISO7241ADWR ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125maximum ratings may cause permanent damage to the device. These are stress ratingsonly and function ..
ISO7241ADWRG4 ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125These devices have limited built-in ESD protection. The leads should be shorted together or the dev ..
ISO7241AMDWREP ,Enhanced Product Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -55 to 125FEATURES• 4000-V Isolation, 560-V V SUPPORTS DEFENSE, AEROSPACE,peak peak IORMAND MEDICAL APPLICATI ..
ISO7241AMDWREPG4 , 1-Mbps QUAD DIGITAL ISOLATORS
ISO7241CDW ,2.5 kVrms, 25 Mbps, 4-Channel 3/1 Digital Isolator 16-SOIC -40 to 125Maximum Ratings table . 9STG• Changed the Handling Rating table to the ESD Ratings table. ... 9• Ad ..
IRG4PC50F
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
Internat onol PD 91468C
TOR Rectifier |RG4PC50F
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
Features C
. Optimized for medium operatin
frequencies ( 1-5 kHz in hard saluching, >20 VCES= 600V
kHz in resonant mode).
. Generation 4 IGBT design provides tighter
parameter distribution and higher eNciency than
Generation 3 - -
. Industry standard TO-247AC package E @VGE - IW, k: - 39A
n -c ha n n el
G VCE(on)typ, = 1.45V
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 70
lo @ Tc = 100°C Continuous Collector Current 39 A
ICM Pulsed Collector Current co 280
u, Clamped Inductive Load Current © 280
N/ss Gate-to-Emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy s 20 ml
PD @ Tc = 25°C Maximum Power Dissipation 200 W
PD @ Tc = 100°C Maximum Power Dissipation 78
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.64
Ras Case-to-Sink, Flat, Greased Surface 0.24 - "CM/
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
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12/30/00
IRG4PC50F International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage (0 18 - - V I/ss = 0V, k: = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.62 - V/°C VGE = 0V, k: = 1.0mA
- 1.45 1.6 k: = 39A VGE = 15V
VCE(0N) Collector-to-Emi) Saturation Voltage - 1.79 - V Ic = 70A See Fig.2, 5
- 1.53 - lc=39A,To=150''C
VGE(m) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250pA
AVGE
gfe Forward Transconductance s 21 30 - S VCE = 100V, k: = 39A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 2000 VGE = 0V, VCE = 600V, TJ = 150°C
legs Gate-to-Emilie, Leakage Current - - i100 nA VGE = EBN
Switching Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 190 290 k: = 39A
age Gate - Emitter Charge (turn-on) - 28 42 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 65 97 VGE = 15V
tdem) Turn-On Delay Time - 31 -
tr RiseTime - 25 - ns TJ = 25°C
tam) Turn-Off Delay Time - 240 350 lc = 39A, Vcc = 480V
tf FalITime - 130 190 VGE = 15V, Rs = 5.09
Er,, Turn-On Switching Loss - 0.37 - Energy losses include "tail"
Eon Turn-Off Switching Loss - 2.1 - mJ See Fig. 10, 11, 13, 14
Ets Total Switching Loss - 2.47 3.0
tdwn) Turn-On Delay Time - 28 - Tu = 150°C,
tr RiseTime - 24 - ns k: = 39A, Vcc = 480V
tam) Turn-Off Delay Time - 390 - VGE = 15V, Rs = 5.09
tr FaIITime - 230 - Energy losses include "tail"
EU Total Switching Loss - 5.0 - mJ See Fig. 13, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 4100 - VGE = 0V
Cas Output Capacitance - 250 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 49 - f = 1.0MHz
Notes:
C) Repetitive rating; Var-- 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VcEs), VGE= 20V, L = 10pH, Rs = 5.on, © Pulse width 3 80ps; duty factor s: 0.1%.
(See fig. 13a) s Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
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