IRG4PC40WPBF ,600V Warp 60-150 kHz Discrete IGBT in a TO-247AC packageapplications Industry-benchmark switching losses improve efficiency of all power supply topologie ..
IRG4PC50F ,600V Fast 1-8 kHz Discrete IGBT in a TO-247AC packageFeatures C Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching, >2 ..
IRG4PC50FD ,600V Fast 1-8 kHz Copack IGBT in a TO-247AC packageFeatures• Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4PC50K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
IRG4PC50KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC packageFeatures C● Short Circuit Rated UltraFast: Optimized for highV = 600VCESoperating frequencies >5.0 ..
IRG4PC50S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC packageFeatures C Standard: Optimized for minimum saturationV = 600VCES voltage and low operating freq ..
ISO7241A ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125FEATURES• 4000-V Isolation, 560-V V APPLICATIONSpeak peak IORM• Industrial Fieldbus– UL 1577 , IEC ..
ISO7241ADW ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125MAXIMUM RATINGSVALUE UNIT(2)V Supply voltage , V , V –0.5 to 6 VCC CC1 CC2V Voltage at IN, OUT, EN ..
ISO7241ADWR ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125maximum ratings may cause permanent damage to the device. These are stress ratingsonly and function ..
ISO7241ADWRG4 ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125These devices have limited built-in ESD protection. The leads should be shorted together or the dev ..
ISO7241AMDWREP ,Enhanced Product Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -55 to 125FEATURES• 4000-V Isolation, 560-V V SUPPORTS DEFENSE, AEROSPACE,peak peak IORMAND MEDICAL APPLICATI ..
ISO7241AMDWREPG4 , 1-Mbps QUAD DIGITAL ISOLATORS
IRG4PC40WPBF
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
ParameterMax.UnitsVCESCollector-to-Emitter Breakdown Voltage600V
IC @ TC = 25°CContinuous Collector Current40
IC @ TC = 100°CContinuous Collector Current20A
ICMPulsed Collector Current 160
ILMClamped Inductive Load Current 160
VGEGate-to-Emitter Voltage± 20V
EARVReverse Voltage Avalanche Energy 160mJ
PD @ TC = 25°CMaximum Power Dissipation160
PD @ TC = 100°CMaximum Power Dissipation65Operating Junction and-55 to + 150
TSTGStorage Temperature Range
Soldering Temperature, for 10 seconds300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw.10 lbf�in (1.1N�m)
IRG4PC40WPbF
INSULATED GATE BIPOLAR TRANSISTOR
PD -95183
n-channelTO-247AC
Features� Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
� Industry-benchmark switching losses improve
efficiency of all power supply topologies
� 50% reduction of Eoff parameter
� Low IGBT conduction losses
� Latest-generation IGBT design and constructionoffers
tighter parameters distribution, exceptional reliability
� Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
� Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
� Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
BenefitsVCES = 600V
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A
04/23/04
ParameterTyp.Max.UnitsRθJCJunction-to-Case–––0.77
RθCSCase-to-Sink, Flat, Greased Surface0.24–––°C/W
RθJAJunction-to-Ambient, typical socket mount–––40Weight6 (0.21)–––g (oz)
Thermal Resistance
Absolute Maximum Ratings1
� Lead-Free
IRG4PC40WPbF
ParameterMin.Typ.Max.UnitsConditionsTotal Gate Charge (turn-on)—98147IC = 20A
QgeGate - Emitter Charge (turn-on)—1218nCVCC = 400VSee Fig.8
QgcGate - Collector Charge (turn-on)—3654VGE = 15V
td(on)Turn-On Delay Time—27—Rise Time—22—TJ = 25°C
td(off)Turn-Off Delay Time—100150IC = 20A, VCC = 480VFall Time—74110VGE = 15V, RG = 10Ω
EonTurn-On Switching Loss—0.11—Energy losses include "tail"
EoffTurn-Off Switching Loss—0.23—mJSee Fig. 9,10, 14
EtsTotal Switching Loss—0.340.45
td(on)Turn-On Delay Time—25—TJ = 150°C,Rise Time—23—IC = 20A, VCC = 480V
td(off)Turn-Off Delay Time—170—VGE = 15V, RG = 10ΩFall Time—124—Energy losses include "tail"
EtsTotal Switching Loss—0.85—mJSee Fig.10,11, 14Internal Emitter Inductance—13—nHMeasured 5mm from package
CiesInput Capacitance—1900—VGE = 0V
CoesOutput Capacitance—140—pFVCC = 30V See Fig. 7
CresReverse Transfer Capacitance—35—ƒ = 1.0MHz
ParameterMin.Typ.Max.UnitsConditionsV(BR)CESCollector-to-Emitter Breakdown Voltage600——VVGE = 0V, IC = 250µA
V(BR)ECSEmitter-to-Collector Breakdown Voltage 18——VVGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage—0.44—V/°CVGE = 0V, IC = 1.0mA2.052.5 IC = 20A VGE = 15V
VCE(ON)Collector-to-Emitter Saturation Voltage—2.36— IC = 40A See Fig.2, 51.90— IC = 20A , TJ = 150°C
VGE(th)Gate Threshold Voltage3.0—6.0VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage—13—mV/°CVCE = VGE, IC = 250µA
gfeForward Transconductance 1828—SVCE = 100 V, IC =20A—250VGE = 0V, VCE = 600V—2.0VGE = 0V, VCE = 10V, TJ = 25°C—2500VGE = 0V, VCE = 600V, TJ = 150°C
IGESGate-to-Emitter Leakage Current——±100nAVGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)ICESZero Gate Voltage Collector Current
Switching Characteristics @ TJ = 25°C (unless otherwise specified)Pulse width ≤ 80µs; duty factor ≤ 0.1%.Pulse width 5.0µs, single shot.
Notes:Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)Repetitive rating; pulse width limited by maximum
junction temperature.
IRG4PC40WPbF
3
Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)
Fig. 2 - Typical Output CharacteristicsFig. 3 - Typical Transfer CharacteristicsLoad Current ( A )
f, Frequency (kHz)
60% of rated
voltage
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
T = 125°C
T = 90°C
Gate drive as specifiedsink
Triangular wave:
Clamp voltage:
80% of rated
Power Dissipation = 28W
10
100
1000
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)V = 15V
80µs PULSE WIDTHT = 150 CJ°T = 25 CJ°
10
100
10007911
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)V = 50V
5µs PULSE WIDTHT = 150 CJ°T = 25 CJ°
IRG4PC40WPbF
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltagevs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. CaseTemperature
0.000010.00010.0010.010.1 1
Notes:
1. Duty factor D =t / t
2. Peak T=Px Z+ T2DMthJCC
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
thJC
D = 0.50SINGLE PULSE
(THERMAL RESPONSE)
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)°V = 15V
80 us PULSE WIDTHI = A40CI = A20CI = A10C5075100125150
T , Case Temperature ( C)
Maximum DC Collector Current(A)°
IRG4PC40WPbF
5
Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. GateResistance
Fig. 10 - Typical Switching Losses vs.Junction Temperature 10 100
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
0V,
f = 1MHz
+ C
+ C
C SHORTEDGE
iesgegc ,ce
resgc
oescegcCiesCoesCres20406080100
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)= 400V=20A2030405060
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
V = 480V
V = 15V
T = 25 C
I = 20A(Ω)
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)°
R = 10Ohm
V = 15V
V = 480VI = A40CI = A20CI = A10C
10 Ω
IRG4PC40WPbF
10
100
1000 10 100 1000
V = 20V
T = 125 C
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA152535450.0
I , Collector-to-emitter Current (A)
Total Switching Losses (mJ)
R = 10Ohm
T = 150 C
V = 480V
V = 15V
10Ω
