IRG4PC40W ,600V Warp 60-150 kHz Discrete IGBT in a TO-247AC packageapplications Industry-benchmark switching losses improveV = 2.05VCE(on) typ.G efficiency of all p ..
IRG4PC40WPBF ,600V Warp 60-150 kHz Discrete IGBT in a TO-247AC packageapplications Industry-benchmark switching losses improve efficiency of all power supply topologie ..
IRG4PC50F ,600V Fast 1-8 kHz Discrete IGBT in a TO-247AC packageFeatures C Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching, >2 ..
IRG4PC50FD ,600V Fast 1-8 kHz Copack IGBT in a TO-247AC packageFeatures• Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4PC50K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
IRG4PC50KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC packageFeatures C● Short Circuit Rated UltraFast: Optimized for highV = 600VCESoperating frequencies >5.0 ..
ISO7241A ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125FEATURES• 4000-V Isolation, 560-V V APPLICATIONSpeak peak IORM• Industrial Fieldbus– UL 1577 , IEC ..
ISO7241ADW ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125MAXIMUM RATINGSVALUE UNIT(2)V Supply voltage , V , V –0.5 to 6 VCC CC1 CC2V Voltage at IN, OUT, EN ..
ISO7241ADWR ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125maximum ratings may cause permanent damage to the device. These are stress ratingsonly and function ..
ISO7241ADWRG4 ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125These devices have limited built-in ESD protection. The leads should be shorted together or the dev ..
ISO7241AMDWREP ,Enhanced Product Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -55 to 125FEATURES• 4000-V Isolation, 560-V V SUPPORTS DEFENSE, AEROSPACE,peak peak IORMAND MEDICAL APPLICATI ..
ISO7241AMDWREPG4 , 1-Mbps QUAD DIGITAL ISOLATORS
IRG4PC40W
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
Internat onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD -91656C
IRG4PC40W
Featu res
. Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
. Industry-benchmark switching losses improve
efficiency of all power supply topologies
. 50% reduction of Eoff parameter
. Low IGBT conduction losses
. Latest-generation IGBT design and construction offers
I/ces = 600V
VCE(on)typ. = 2.05V
E @VGE = 15v, Ic = 20A
n-channel
tighter parameters distribution, exceptional reliability
Benefits
. Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
. Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
. Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 40
lo @ Tc = 100°C Continuous Collector Current 20 A
ICM Pulsed Collector Current co 160
u, Clamped Inductive Load Current © 160
N/ss Gate-to-Emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy s 160 ml
PD @ Tc = 25°C Maximum Power Dissipation 160 W
PD @ Tc = 100°C Maximum Power Dissipation 65
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.77
Ras Case-to-Sink, Flat, Greased Surface 0.24 - "CM/
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
4/15/2000
IRG4PC40w International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, k: = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.44 - V/°C l/ss = 0V, k: = 1.0mA
- 2.05 2.5 k: = 20A VGE = 15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.36 - V Ic = 40A See Fig.2, 5
- 1.90 - lc = 20A , To = 150°C
VGEW Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - 13 - mvrc VCE = VGE, Ic = 250pA
gfe Forward Transconductance © 18 28 - S VCE = 100 V, lc =20A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, I/cs = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25''C
- - 2500 VGE = 0V, VCE = 600V, To = 150''C
legs Gate-to-Emi) Leakage Current - - i100 nA VGE = EBN
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
q, Total Gate Charge (turn-on) - 98 147 lc = 20A
Qge Gate - Emitter Charge (turn-on) - 12 18 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 36 54 Vas = 15V
tdwn) Turn-On Delay Time - 27 -
tr RiseTime - 22 - ns Tu = 25°C
td(oti) Turn-Off Delay Time - 100 150 lc = 20A, Vcc = 480V
t, FalITime - 74 110 l/GE = 15V, RG = lon
Er,, Turn-On Switching Loss - 0.11 - Energy losses include "tail"
' Turn-Off Switching Loss - 0.23 - ml See Fig. 9,10, 14
Eg Total Switching Loss - 0.34 0.45
tu(on) Turn-On Delay Time - 25 - Tu = 150°C,
tr RiseTime - 23 - ns k: = 20A, Vcc = 480V
tam) Turn-Off Delay Time - 170 - VGE = 15V, Rs = lon
tr FaIITime - 124 - Energy losses include "tail"
Ek, Total Switching Loss - 0.85 - m] See Fig.10,11, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1900 - VGE = 0V
Cas Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 35 - f=1.0MHz
Notes:
C) Repetitive rating; VGE= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VcEs),VsE= 20V, L = 10pH, Rs = Ion, © Pulse width f 80ps; duty factor 3 0.1%.
(See fig. 13a) © Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
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