IRG4PC40UPBF ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC packageFeatures C UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
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IRG4PC40WPBF ,600V Warp 60-150 kHz Discrete IGBT in a TO-247AC packageapplications Industry-benchmark switching losses improve efficiency of all power supply topologie ..
IRG4PC50F ,600V Fast 1-8 kHz Discrete IGBT in a TO-247AC packageFeatures C Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching, >2 ..
IRG4PC50FD ,600V Fast 1-8 kHz Copack IGBT in a TO-247AC packageFeatures• Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4PC50K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
ISO7240MDWRG4 ,Quad Channel, 4/0, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features 3 DescriptionThe ISO7240x, ISO7241x, and ISO7242x devices are1• 25 and 150-Mbps Signaling ..
ISO7241A ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125FEATURES• 4000-V Isolation, 560-V V APPLICATIONSpeak peak IORM• Industrial Fieldbus– UL 1577 , IEC ..
ISO7241ADW ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125MAXIMUM RATINGSVALUE UNIT(2)V Supply voltage , V , V –0.5 to 6 VCC CC1 CC2V Voltage at IN, OUT, EN ..
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ISO7241ADWRG4 ,Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125These devices have limited built-in ESD protection. The leads should be shorted together or the dev ..
ISO7241AMDWREP ,Enhanced Product Quad Channel, 3/1, 1Mbps, Digital Isolator 16-SOIC -55 to 125FEATURES• 4000-V Isolation, 560-V V SUPPORTS DEFENSE, AEROSPACE,peak peak IORMAND MEDICAL APPLICATI ..
IRG4PC40UPBF
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
Internet onol PD-95184
TOR Rectifier IRG4PC40UPbF
INSULATEDGATEBIPOLARTRANSISTOR UItraFast Speed IGBT
Features c
. UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200 VCES=500V
kHz in resonant mode
. Generation 4 IGBT design provides tighter G VCE(on)typ. = 1 TiN
parameter distribution and higher efficiency than
Generation 3 - -
. Industry standard TO-247AC package E @Vas - 15V, lc - 20A
. Lead-Free n-channel
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions T) l
. Designed to be a "drop-in" replacement for equivalent LN
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings TO-247/C
Parameter Max. Units
VCEs Collector-to-Emitter Voltage 600 V
k; © Tc = 25°C Continuous Collector Current 40
k: @ Tc = 100°C Continuous Collector Current 20 A
ICM Pulsed Collector Current co 160
u, Clamped Inductive Load Current © 160
VGE Gate-to-Emitter Voltage :20 V
EARV Reverse Voltage Avalanche Energy © 15 m]
PD @ To = 25°C Maximum Power Dissipation 160 W
PD @ TC = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rouc Junction-to-Case ------------ 0.77
Recs Case-to-Sink, flat, greased surface - 0.24 - °C/W
RNA Junction-to-Ambient, typical socket mount ------------ 40
Wt Weight - 6 (0.21) - g (oz)
1
04/23/04
IRG4PC40UPbF International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, k: = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage (4) 18 - - V VGE = 0V, Ic = 1.0A See Fin. 2 5
Awamch/AT Temperature Coeff. of Breakdown Voltage ---- 0.63 - V/°C I/ss = 0V, Ic = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.72 2.1 k; = 20A Vas = 15V
- 2.15 - V Ic = 40A
- 1.7 - k: = 20A, To = 150°C
VGE(1h) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C l/cs = VGE, IC = 250pA
9te Forward Transconductance (5) 11 18 - S VCE = 100V, k; = 20A
- - 250 l/ss = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current - - 2.0 pA VGE = 0V, VCE = 10V, T, = 25°C
- - 2500 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- :100 nA VGE = t201/
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) ---- 100 150 Ic = 20A
Qge Gate - Emitter Charge (turn-on) - 16 25 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 40 60 l/ss = 15V
G(on) Turn-On Delay Time - 34 - Tu = 25°C
tr RiseTime - 19 - ns IC = 20A, Vcc = 480V
td(off) Turn-Off Delay Time - 110 175 VGE = 15V, Ra = 109
tt FallTime ---- 120 180 Energy losses include "tail"
Eon Turn-On Switching Loss ---- 0.32 ----
hu, Turn-Off Switching Loss - 0.35 - mJ See Fig. IO, 11, 13, 14
Ets Total Switching Loss - 0.67 1.0
td(on) Turn-On Delay Time - 30 - Tu = 150°C,
tr RiseTime - 19 - ns Ic = 20A, Vcc = 480V
tdmff) Turn-Off Delay Time - 220 - VGE = 15V, Ra = 1052
tt FallTime ---- 160 ---- Energy losses include "tail"
EB Total Switching Loss - 1.4 - mJ See Fig. 13, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 2100 - VGE = 0V
Coes Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance - 34 - f = 1.0MHz
Notes:
C) Repetitive rating; Vera: 20V, pulse width limited by © Pulse width s: 80ps; duty factor I 0.1%.
max. junction temperature. ( See fig. 13b )
s Pulse width 5.0ps, single shot.
© Vcc = 80%(VCE3), Vas = 20V, L =10pH, Ra =1OQ,
(See fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
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