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IRG4PC40U
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
Internat onol PD 91466E
TOR Rectifier llRG4PC40U
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
Features C
. UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200 VCES= 600V
kHz in resonant mode
. Generation 4 IGBT design provides tighter
parameter distribution and higher eNciency than
Generation 3 - -
. Industry standard TO-247AC package E @VGE - IW, k: - 20A
n -c ha n n el
G VcE(on)typ.=1.72V
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings TO-247AC
Parameter Max. Units
Vces Collector-to-Emir Voltage 600 V
Ic @ To = 25°C Continuous Collector Current 40
lo @ Tc = 100°C Continuous Collector Current 20 A
ICM Pulsed Collector Current C) 160
ILM Clamped Inductive Load Current © 160
VGE Gate-to-Emitter Voltage 120 V
EARV Reverse Voltage Avalanche Energy © 15 m]
PD @ Tc = 25°C Maximum Power Dissipation 160 W
PD @ Tc = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
RNC Junction-to-Case ------------ 0.77
Recs Case-to-Sink, flat, greased surface ------ 0.24 ------ ''CIW
RNA Junction-to-Ambient, typical socket mount ------------ 40
Wt Weight ------ 6 (0.21) - g (oz)
1
12/30/00
|RG4PC4OU
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - ---- V VGE = 0V, Ic = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - ---- V VGE = 0V, Ic = 1.0A See Fia. 2, 5
AV(BR)CESIAT Temperature Coeff. of Breakdown Voltage - 0.63 - V/''C VGE = 0V, k: = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.72 2.1 Ic = 20A VGE = 15V
- 2.15 - V lc = 40A
- 1.7 ---- Ic = 20A, To = 150°C
VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, k: = 250pA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, k: = 250pA
gfe Forward Transconductance s 11 18 - S VCE = 100V, Ic = 20A
- - 250 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current ---- ---- 2.0 pA VGE = 0V, VCE = 10V, To = 25°C
- - 2500 VGE = 0V, VCE = 600V, To = 150°C
ds Gate-to-Emitter Leakage Current - - A100 nA VGE = EOV
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 100 150 lc = 20A
Qge Gate - Emitter Charge (turn-on) - 16 25 n0 Vcc = 400V See Fig. 8
090 Gate - Collector Charge (turn-on) - 40 60 VGE = 15V
tam”) Turn-On Delay Time ---- 34 - TJ = 25°C
tr RiseTime ---- 19 ---- ns Ic = 20A, Vcc = 480V
td(off) Turn-Ott Delay Time ---- 110 175 VGE = 15V, Rs = lon
tf FalITime - 120 180 Energy losses include "tail"
EU, Turn-On Switching Loss ---- 0.32 ----
Eoff Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 10, 11, 13, 14
Ets Total Switching Loss - 0.67 1.0
tam) Turn-On Delay Time ---- 3O - Tu = 150°C,
t, RiseTime ---- 19 - ns Ic = 20A, Vcc = 480V
tu(oit) Turn-Off Delay Time - 220 - VGE = 15V, Rs = lon
tr FaIITime ---- 160 _.-.- Energy losses include "tail"
Es Total Switching Loss - 1.4 - mJ See Fig. 13, 14
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance ---- 2100 ---- VGE = 0V
Cues Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 34 - f = 1.0MHz
Notes:
co Repetitive rating; VGE= 20V, pulse width limited by
max. junction temperature. ( See ng. 13b )
© Vcc = 80%(VcEs),VGE= 20V, L = 10pH, Rs = Ion,
(See ftg. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width S 80ps; duty factor f 0.1%.
S Pulse width 5.0ps, single shot.
