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IRG4PC40S
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
Internat onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD 914658
|RG4PC4OS
Standard Speed IGBT
Features
. Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
. Generation 4 IGBT design provides tighter
parameter distribution and higher erciency than
Generation 3
. Industry standard TO-247AC package
n-channel
VCES = 600V
VCE(on) typ. = 1 .32V
@VGE =15V, Ic = 31A
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 60
lo @ Tc = 100°C Continuous Collector Current 31 A
ICM Pulsed Collector Current C) 120
ILM Clamped Inductive Load Current © 120
N/ss Gate-to-Emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy s 15 ml
PD @ Tc = 25°C Maximum Power Dissipation 160 W
PD @ Tc = 100°C Maximum Power Dissipation 65
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.77
Ras Case-to-Sink, Flat, Greased Surface 0.24 - "CM/
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
12/30/00
IRG4PCMOS International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V I/ss = 0V, k: = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.75 - V/°C VGE = 0V, k: = 1.0mA
- 1.32 1.5 lc=31A VGE=15V
VCE(0N) Collector-to-Emi) Saturation Voltage - 1.68 - V Ic = 60A See Fig.2, 5
- 1.32 - IC=31A,TJ=150°C
VGE(m) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -9.3 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance s 12 21 - S VCE = 100V, k: = 31A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 600V, TJ = 150°C
legs Gate-to-Emilie, Leakage Current - - i100 nA VGE = EBN
Switching Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 100 150 k: = 31A
age Gate - Emitter Charge (turn-on) - 14 21 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 34 51 VGE = 15V
tdem) Turn-On Delay Time - 22 -
tr RiseTime - 18 - ns TJ=25°C
tam) Turn-Off Delay Time - 650 980 lc = 31A, Vcc = 480V
tf FalITime - 380 570 VGE = 15V, Rs = lon
E0" Turn-On Switching Loss - 0.45 - Energy losses include "tail"
Eon Turn-Off Switching Loss - 6.5 - mJ See Fig. 10, 11, 13, 14
Ets Total Switching Loss - 6.95 9.9
tdwn) Turn-On Delay Time - 23 - Tu = 150°C,
tr RiseTime - 21 - ns k: = 31A, Vcc = 480V
tam) Turn-Off Delay Time - 1000 - VGE = 15V, Rs = 109
tr FaIITime - 940 - Energy losses include "tail"
Ets Total Switching Loss - 12 - mJ See Fig. 13, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 2200 - VGE = 0V
Coes Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 26 - f = 1.0MHz
Notes:
C) Repetitive rating; Var-- 20V, pulse width limited by (ii) Pulse width f 80ps; duty factor 3 0.1%.
max. junction temperature. ( See fig. 13b )
S Pulse width 5.0ps, single shot.
© Vcc = 80%(VcEs), VGE= 20V, L = 10pH, Rs = Ion,
(See fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
2
