IRG4PC40KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC packageFeatures Short Circuit Rated UltraFast: Optimized forV = 600VCES high operating frequencies >5.0 ..
IRG4PC40S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC packageFeatures C Standard: Optimized for minimum saturationV = 600VCES voltage and low operating freq ..
IRG4PC40U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC packageFeatures C• UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4PC40UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC packageFeatures• UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switch ..
IRG4PC40UD-E ,600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC packageFeatures• UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switch ..
IRG4PC40UDPBF ,600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC packagePD 9.1467DIRG4PC40UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECO ..
ISO7240CDWRG4 ,2.5 kVrms, 25 Mbps, 4-Channel 4/0 Digital Isolator 16-SOIC -40 to 125 SLLS868T–SEPTEMBER 2007–REVISED APRIL 2017Simplified Schematic..... 1• Changed the CTI Test Condit ..
ISO7240CF ,Quad, 4/0, 25Mbps, Digital Isolator, Selectable FailsafeFeatures 3 DescriptionThe ISO7240x, ISO7241x, and ISO7242x devices are1• 25 and 150-Mbps Signaling ..
ISO7240CFDWR ,Quad, 4/0, 25Mbps, Digital Isolator, Selectable Failsafe 16-SOIC -40 to 125 SLLS868T–SEPTEMBER 2007–REVISED APRIL 2017Simplified Schematic..... 1• Changed the CTI Test Condit ..
ISO7240CFQDWRQ1 ,Automotive Catalog Quad, 4/0, 25Mbps, Digital Isolator, Selectable Failsafe 16-SOIC -40 to 125FEATURES• Qualified for Automotive Applications• 4 kV ESD Protection• Selectable Failsafe Output (I ..
ISO7240M ,Quad Channel, 4/0, 150Mbps, Digital IsolatorChanges from Revision N (January 2012) to Revision O Page• Added the Safety Limiting Values section ..
ISO7240MDW ,Quad Channel, 4/0, 150Mbps, Digital Isolator 16-SOIC -40 to 125 SLLS868T–SEPTEMBER 2007–REVISED APRIL 2017Simplified Schematic..... 1• Changed the CTI Test Condit ..
IRG4PC40KD
600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package
PD -91584A
IRG4PC40KD
Short Circuit Rated
UItraFast IGBT
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features C
. Short Circuit Rated UItraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10ps @ 125°C, VGE = 15V
. Generation 4 IGBT design provides tighter
parameter distribution and higher eeciency than G
Generation 3
. IGBT co-packaged with HEXFREDTM ultrafast, E
ylt.e-soft-refovery anti-parallel diodes for use in n-channel
bridge configurations
. Industry standard TO-MMC package
Benefits
. Generation 4 IGBTs offer highest efficiencies
available
. HEXFRED diodes optimized for performance with 'ri"r.EP.
IGBTs. Minimized recovery characteristics require
less/no snubbing
I Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
VCES = 600V
VCE(on) typ. = 2.11/
@VGE = 15V, Ic = 25A
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 42
lc @ Tc = 100°C Continuous Collector Current 25
ICM Pulsed Collector Current OD 84 A
ILM Clamped Inductive Load Current © 84
IF @ To = 100°C Diode Continuous Fon/vard Current 15
IFM Diode Maximum Forward Current 84
tsc Short Circuit VWthstand Time 10 ps
VGE Gate-to-Emitter Voltage 1 20 V
Pro @ Tc = 25''C Maximum Power Dissipation 160
Pro @ Tc = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibfoin (1.1 tom)
Thermal Resistance
Parameter Min Typ. Max. Units
Rsuc Junction-to-Case - IGBT - - 0.77
ReJC Junction-to-Case - Diode - - 1.7 ''CA/V
Recs Case-to-Sink, flat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
1
4/15/2000
International
IRG4PC40KD TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage© 600 - - V VGE = 0V, Ic = 250pA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.46 - V/°C VGE = 0V, lc = 1.0mA
VCEM) Collector-to-Emitter Saturation Voltage - 2.10 2.6 Ic = 25A VGE = 15V
- 2.70 - V Ic = 42A See Fig. 2, 5
- 2.14 - k: = 25A, Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance © 7.0 14 - S VCE = 100V, Ic = 25A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 3500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop - 1.3 1.7 V Ic = 15A See Fig. 13
- 1.2 1.6 l: =15A,Tu =150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 120 180 Ic = 25A
Qge Gate - Emitter Charge (turn-on) - 16 24 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 51 77 VGE = 15V
tdwn) Turn-On Delay Time - 53 -
t, Rise Time - 33 - ns To = 25°C
tum) Turn-Off Delay Time - 110 160 Ic = 25A, Vcc = 480V
tf Fall Time - 100 150 VGE = 15V, Rs = lon
Eon Turn-On Switching Loss - 0.95 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.76 - mJ See Fig. 9,10,14
G Total Switching Loss - 1.71 2.3
tsc Short Circuit Wlthstand Time 10 - - us Vcc = 360V, To = 125°C
VGE = 15V, Rs = lon , VCPK < 500V
td(on) Turn-On Delay Time - 52 - TJ = 150°C,
tr Rise Time - 37 - ns Ic = 25A, Vcc = 480V
tum) Turn-Off Delay Time - 220 - VGE = 15V, Rs = lon
tr Fall Time - 140 - Energy losses include "tail"
G Total Switching Loss - 2.67 - mJ See Fig. 11,14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1600 - VGE = 0V
Coes Output Capacitance - 130 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 55 - f = 1.0MHz
trr Diode Reverse Recovery Time - 42 60 ns To = 25°C See Fig.
- 74 120 To =125°C 14 IF = 15A
lrr Diode Peak Reverse Recovery Current - 4.0 6.0 A To = 25°C See Fig.
- 6.5 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 80 180 nC T J = 25°C See Fig.
- 220 600 To = 125°C 16 di/dt = 200Aps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 188 - Alps To = 25°C See Fig.
During tr, - 160 - To = 125°C 17
2
