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IRG4PC40K
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
Internat
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.15858
IRG4PC40K
Short Circuit Rated
UItraFast IGBT
Features
. Short Circuit Rated UItraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10ps @ 125°C, VGE = 15V
. Generation 4 IGBT design provides higher efhciency
than Generation 3
. Industry standard TO-247AC package
VCES = 600V
E @VGE = 15V, lc = 25A
n-channel
Benefits
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specified application conditions
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 42
Ic @ Tc = 100°C Continuous Collector Current 25 A
ICM Pulsed Collector Current CD 84
ILM Clamped Inductive Load Current © 84
tsc Short Circuit Nthstand Time 10 ps
VGE Gate-to-Emitter Voltage 120 V
EARV Reverse Voltage Avalanche Energy © 15 mJ
Po @ Tc = 25''C Maximum Power Dissipation 160 W
Pro @ Tc = 100°C Maximum Power Dissipation 65
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 0.77
Recs Case-to-Sink, Flat, Greased Surface 0.24 - 'C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
4/15/2000
IRG4PC40K
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, k: = 250pA
V(BR)Ecs Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, Ic = 1.0A
AV(BR)CE$/ATJ Temperature Coeff. of Breakdown Voltage - 0.46 - V/°C l/ss = ov, lc = 1.0mA
- 2.10 2.6 k: = 25A VGE =15V
VCE(ON) Collector-to-emitter Saturation Voltage - 2.70 - V Ic = 42A See Fig.2, 5
- 2.14 - IC=25A,TJ= 150°C
VGEW Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mvrc VCE = VGE, Ic = 250pA
gfe Forward Transconductanoe S 7.0 14 - S VCE = 100 V, Ic = 25A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, I/cs = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25''C
- - 2000 VGE = 0V, VCE = 600V, T: = 150°C
legs Gate-to-Emi) Leakage Current - - i100 nA VGE = EBN
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 120 180 lc = 25A
Qge Gate - Emitter Charge (turn-on) - 16 24 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 51 77 Vas = 15V
tdwn) Turn-On Delay Time - 30 -
tr Rise Time - 15 - ns Tu = 25°C
td(ott) Turn-Off Delay Time - 140 210 lc = 25A, Vcc = 480V
t; Fall Time - 140 210 VGE = 15V, RG = lon
Eon Turn-On Switching Loss - 0.62 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.33 - mJ See Fig. 9,10,14
Ets Total Switching Loss - 0.95 1.4
u, Short Circuit Vthtand Time 10 - - ps Vcc = 400V, To = 125°C
VGE = 15V, Rs = lon , VCPK < 500V
town) Turn-On Delay Time - 30 - TJ = 150°C,
tr Rise Time - 18 - Ic = 25A, Vcc = 480V
tum) Turn-Off Delay Time - 190 - ns VGE = 15V, Rs = lon
tr Fall Time - 150 - Energy losses include "tail"
Ets Total Switching Loss - 1.9 - mJ See Fig. 11,14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1600 - VGE = 0V
Goes Output Capacitance - 130 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 55 - f = 1.0MHz
Notes:
co Repetitive rating; VGE = 20V, pulse width limited by co Repetitive rating; pulse width limited by maximum
max. junction temperature. (See Ftg. 13b)
Vcc = 80%(VcEs), vGE = 20V, L = 10pH, Rs = Ion,
(See fig. 13a)
junction temperature.
G) Pulse width f 80ps; duty factor f 0.1%.
6) Pulse width 5.0ps, single shot.
