IRG4PC40FPBF ,600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package IRG4PC40FPbF
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ISO7240CDWR ,2.5 kVrms, 25 Mbps, 4-Channel 4/0 Digital Isolator 16-SOIC -40 to 125Maximum Ratings table . 9STG• Changed the Handling Rating table to the ESD Ratings table. ... 9• Ad ..
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ISO7240CFQDWRQ1 ,Automotive Catalog Quad, 4/0, 25Mbps, Digital Isolator, Selectable Failsafe 16-SOIC -40 to 125FEATURES• Qualified for Automotive Applications• 4 kV ESD Protection• Selectable Failsafe Output (I ..
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IRG4PC40FPBF
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
Internet onol PD -95430
TOR, Rectifier IRG4PC40FPbF
INSULATED GATE BIPOLARTRANSISIDR FastSpeedIGBT
Features C
. Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20 VcEs=600V
kHz in resonant mode).
. Generation 4 IPI. design provides fighter G VCE(on)typ.=1-50V
parameter distribution and higher efficiency than
Generation 3 - -
. Industry standard TO-247AC package E @VGE 15V, k: 27A
. Lead-Free n-channel
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions T) l
. Designed to be a "drop-in" replacement for equivalent LN
industry-standard Generation 3 IR IGBT's
TO-247/5C
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 49
lo @ Tc = 100°C Continuous Collector Current 27 A
ICM Pulsed Collector Current (D 200
Ira, Clamped Inductive Load Current © 200
l/se Gate-to-Emitter Voltage i 20 V
EARV Reverse Voltage Avalanche Energy © 15 m]
PD @ Tc = 25°C Maximum Power Dissipation 160 W
PD @ Tc = 100°C Maximum Power Dissipation 65
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 0.77
Recs Case-to-Sink, Flat, Greased Surface 0.24 - "Ch/V
Ras Junction-to-Ambient, typical socket mount - 40
N Weight 6 (0.21) - g (oz)
1
06/17/04
|RG4PC4OFPbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emi Breakdown Voltage 600 - - V VGE = 0V, lc = 250pA
V(BR)Ecs Emitter-to-Collector Breakdown Voltage 6) 18 - - V VGE = 0V, lc = 1.0A
AV(BR,CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.70 - V/°C VGE = 0V, k: = 1.0mA
- 1.50 1.7 Ic = 27A VGE = 15V
VCE(0N) Collector-to-Emitter Saturation Voltage - 1.85 - V Ic = 49A See Fig.2, 5
- 1.56 - Ic=27A,To=15ty'C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, Ic = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mV/°C VCE = VGE, k: = 250pA
gre Forward Transconductance s 9.2 12 - S VcE = 100V, lc = 27A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 600V, Tu = 150''C
lass Gate-to-Emi) Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 100 150 Ic = 27A
Qge Gate - Emitter Charge (turn-on) - 15 23 nC Vcc = 400V See Fig. 8
(Ar: Gate - Collector Charge (turn-on) - 35 53 VGE = 15V
tum) Turn-On Delay Time - 26 -
tr Rise Time - 18 - ns Tu = 25°C
td(off) Turn-Off Delay Time - 240 360 IC = 27A, Vcc = 480V
tr FaIITime - 170 250 VGE = 15V, R3 = 109
G, Turn-On Switching Loss - 0.37 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 1.81 - m] See Fig. 10, 11, 13, 14
G Total Switching Loss - 2.18 2.8
td(on) Turn-On Delay Time - 25 - Tu = 150''C,
tr RiseTime - 21 - ns lc = 27A, Vcc = 480V
tam) Turn-Off Delay Time - 380 - VGE = 15V, R3 = 109
tr FallTime - 310 - Energy losses include "tail"
Es Total Switching Loss - 3.9 - mJ See Fig. 13, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 2200 - VGE = 0V
Cas Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 29 - f = 1.0MHz
Notes:
co Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Vcc = 80%(VcEs), Vas = 20v, L = 10pH, Rs = 109,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width S 80ps; duty factor 5 0.1%.
s Pulse width 5.0ps, single shot.
