IRG4PC40FD ,600V Fast 1-8 kHz Copack IGBT in a TO-247AC packagePD 91464BIRG4PC40FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY D ..
IRG4PC40FDPBF ,600V Fast 1-8 kHz Copack IGBT in a TO-247AC packageFeatures Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4PC40FPBF ,600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package IRG4PC40FPbF
IRG4PC40K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC packageFeatures Short Circuit Rated UltraFast: Optimized for highV = 600VCES operating frequencies >5.0 ..
IRG4PC40KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC packageFeatures Short Circuit Rated UltraFast: Optimized forV = 600VCES high operating frequencies >5.0 ..
IRG4PC40S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC packageFeatures C Standard: Optimized for minimum saturationV = 600VCES voltage and low operating freq ..
ISO7240C ,Quad Channel, 4/0, 25Mbps, Digital IsolatorElectrical Characteristics: V and V at 3.3 VCC1 CC213.6 Electrostatic Discharge Caution. 34Operatio ..
ISO7240CDW ,2.5 kVrms, 25 Mbps, 4-Channel 4/0 Digital Isolator 16-SOIC -40 to 125Features 3 DescriptionThe ISO7240x, ISO7241x, and ISO7242x devices are1• 25 and 150-Mbps Signaling ..
ISO7240CDWG4 ,2.5 kVrms, 25 Mbps, 4-Channel 4/0 Digital Isolator 16-SOIC -40 to 125Changes from Revision N (January 2012) to Revision O Page• Added the Safety Limiting Values section ..
ISO7240CDWR ,2.5 kVrms, 25 Mbps, 4-Channel 4/0 Digital Isolator 16-SOIC -40 to 125Maximum Ratings table . 9STG• Changed the Handling Rating table to the ESD Ratings table. ... 9• Ad ..
ISO7240CDWRG4 ,2.5 kVrms, 25 Mbps, 4-Channel 4/0 Digital Isolator 16-SOIC -40 to 125 SLLS868T–SEPTEMBER 2007–REVISED APRIL 2017Simplified Schematic..... 1• Changed the CTI Test Condit ..
ISO7240CF ,Quad, 4/0, 25Mbps, Digital Isolator, Selectable FailsafeFeatures 3 DescriptionThe ISO7240x, ISO7241x, and ISO7242x devices are1• 25 and 150-Mbps Signaling ..
IRG4PC40FD-IRG4PC40FDPBF
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package
PD 91464B
International
TOR Rectifier IRG4PC40FD
INSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features C
. Fast: Optimized for medium operating VCES = 600V
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
. Generation 4 IGBT design provides tighter G
parameter distribution and higher efficiency than
Generation 3 E @VGE = 15V, Ic = 27A
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in n I h a n n el
bridge configurations
I Industry standard TO-247AC package
Benefits
. Generation -4 IGBT's offer highest efficiencies
available
. IGBT's optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 49
IC @ Tc = 100°C Continuous Collector Current 27
ICM Pulsed Collector Current C) 200 A
u, Clamped Inductive Load Current © 200
IF @ To = 100''C Diode Continuous Forward Current 15
IFM Diode Maximum Forward Current 200
VGE Gate-to-Emitter Voltage , 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 160
Po @ Tc = 100°C Maximum Power Dissipation 65
T: Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT ------------ 0.77
RQJC Junction-to-Case - Diode ------------ 1.7 ''CNV
Recs Case-to-Sink, flat, greased surface ------ 0.24 -
RNA Junction-to-Ambient, typical socket mount ---------- 40
Wt Weight ------ 6 (0.21) ------ g (oz)
1
12/30/00
International
IRG4PC40FD TOR Rectifier
Electrical Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CE5 Collector-to-Emitter Breakdown Voltages 600 - - V VGE = 0V, k: = 250PA
AV
VCE(on) Collector-to-Emitter Saturation Voltage - 1.50 1.7 k: = 27A VGE = 15V
- 1.85 - V l: = 49A See Fig. 2, 5
- 1.56 - Ic = 27A, T: = 150°C
VGEW Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mV/°C VCE = VGE, lc = 250PA
gfe Forward Transconductance © 9.2 12 - S VCE = 100V, Ic = 27A
Ices Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 3500 VGE = 0V, VCE = 600V, To = 150°C
VFM Diode Fon/vard Voltage Drop ---- 1.3 1.7 V Ic = 15A See Fig. 13
- 1.2 1.6 Io =15A,Tu =150°C
IGEs Gate-to-Emitter Leakage Current - ---- A100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) ---- 100 150 Ic = 27A
Qge Gate - Emitter Charge (turn-on) - 15 23 nC Vcc = 400V See Fig. 8
Qqc Gate - Collector Charge (turn-on) - 35 53 VGE = 15V
tam“) Turn-On Delay Time - 63 - TJ = 25°C
tr RiseTime ---- 32 ---- ns Ic = 27A, Vcc = 480V
tam) Turn-Off Delay Time ---- 230 350 VGE = 15V, Rs = 109
tr FalITime - 170 250 Energy losses include "tail" and
El,, Turn-On Switching Loss - 0.95 - diode reverse recovery.
Eur Turn-Off Switching Loss - 2.01 ---- mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 2.96 4.0
tam) Turn-On Delay Time ---- 63 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
t, RiseTime ---- 33 ---- ns k: = 27A, Vcc = 480V
tam) Turn-Off Delay Time ---- 350 ---- VGE = 15V, Rs = lon
tr FaIITime - 310 - Energy losses include "tail" and
E: Total Switching Loss - 4.7 - ntl diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 2200 - VGE = 0V
Cas Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance - 29 - f = 1.0MHz
trr Diode Reverse Recovery Time ---- 42 60 ns To = 25°C See Fig.
- 74 120 To = 125°C 14 IF = 15A
In Diode Peak Reverse Recovery Current ---- 4.0 6.0 A To = 25°C See Fig.
-- 6.5 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 80 180 nC To = 25°C See Fig.
- 220 600 To = 125°C 16 di/dt 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery ---- 188 ---- Alps To = 25''C See Fig.
During tn ---- 160 ---- To = 125°C 17
2
