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IRG4PC40F
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
Internat onol PD 91463B
TOR Rectifier |RG4PC40F
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
Features C
. Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20 VCES= 600V
kHz in resonant mode).
. Generation 4 IGBT design provides tighter
parameter distribution and higher eNciency than
Generation 3 - -
. Industry standard TO-247AC package E @VGE - IW, k: - 27A
n-channel
G VcE(on)typ.=1.50V
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 49
lo @ Tc = 100°C Continuous Collector Current 27 A
ICM Pulsed Collector Current co 200
u, Clamped Inductive Load Current © 200
N/ss Gate-to-Emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy s 15 ml
PD @ Tc = 25°C Maximum Power Dissipation 160 W
PD @ Tc = 100°C Maximum Power Dissipation 65
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.77
Ras Case-to-Sink, Flat, Greased Surface 0.24 - "CM/
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
12/30/00
IRG4PC40F International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V I/ss = 0V, k: = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.70 - V/°C VGE = 0V, Ic = 1.0mA
- 1.50 1.7 k: = 27A VGE = 15V
VCE(0N) Collector-to-Emi) Saturation Voltage - 1.85 - V Ic = 49A See Fig.2, 5
- 1.56 - lc=27A,To=150''C
VGE(m) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mvrc VCE = VGE, k: = 250pA
gfe Forward Transconductance s 9.2 12 - S VCE = 100V, k; = 27A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 600V, TJ = 150°C
legs Gate-to-Emilie, Leakage Current - - i100 nA VGE = EBN
Switching Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
q, Total Gate Charge (turn-on) - 100 150 k: = 27A
Qge Gate - Emitter Charge (turn-on) - 15 23 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 35 53 VGE = 15V
tdem) Turn-On Delay Time - 26 -
tr RiseTime - 18 - ns TJ=25°C
tam Turn-Off Delay Time - 240 360 lc = 27A, Vcc = 480V
tf FalITime - 170 250 VGE = 15V, RG = lon
E0" Turn-On Switching Loss - 0.37 - Energy losses include "tail"
Eon Turn-Off Switching Loss - 1.81 - mJ See Fig. 10, 11, 13, 14
Ets Total Switching Loss - 2.18 2.8
tdwn) Turn-On Delay Time - 25 - Tu = 150°C,
tr RiseTime - 21 - ns k: = 27A, Vcc = 480V
tam) Turn-Off Delay Time - 380 - VGE = 15V, Rs = lon
tr FaIITime - 310 - Energy losses include "tail"
EU Total Switching Loss - 3.9 - mJ See Fig. 13, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 2200 - VGE = 0V
Cas Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 29 - f = 1.0MHz
Notes:
C) Repetitive rating; Var-- 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VCEs), VGE= 20V, L = 10pH, Rs = Ion, © Pulse width 3 80ps; duty factor s: 0.1%.
(See fig. 13a) s Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
2
